• Applied Microscopy
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• v.50
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• pp.7.1-7.10
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• 2020

Tantalum nitride (TaN_x) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20-100% improved microhardness values were obtained. The detailed microstructural changes of the TaN_x films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaN_x phase evolves from body-centered-cubic (b.c.c.) TaN_0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaN_x film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaN_x film.

• Journal of the Korean Mathematical Society
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• v.57 no.3
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• pp.641-653
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• 2020

To extend the well-known extremal characterization of the geometric mean of two n × n positive definite matrices A and B, we solve the following problem: $${\max}\{X:X=X^*,\;\(\array{A&V&X\\V&B&W\\X&W&C}\){\geq}0\}$$. We find an explicit expression of the maximum value with respect to the matrix geometric mean of Schur complements.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.1-4
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• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.130-132
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• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.

• Communications of the Korean Mathematical Society
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• v.38 no.4
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• pp.1271-1280
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• 2023

The object of the present paper is to introduce a type of non-flat Riemannian manifold, called a weakly cyclic generalized B-symmetric manifold (W CGBS)_n. We obtain a sufficient condition for a weakly cyclic generalized B-symmetric manifold to be a generalized quasi Einstein manifold. Next we consider conformally flat weakly cyclic generalized B-symmetric manifolds. Then we study Einstein (W CGBS)_n (n > 2). Finally, it is shown that the semi-symmetry and Weyl semi-symmetry are equivalent in such a manifold.

• Proceedings of the PSK Conference
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• 2001.04a
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• pp.133.2-134
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• 2001

• The Journal of the Petrological Society of Korea
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• v.20 no.1
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• pp.23-37
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• 2011

The scaling properties on the length distribution of microcrack populations from Tertiary crystalline tuff are investigated. From the distribution charts showing length range with 15 directional angles and five groups(I~V), a systematic variation appears in the mean length with microcrack orientation. The distribution charts are distinguished by the bilaterally symmetrical pattern to nearly N-S direction. The whole domain of the length-cumulative frequency diagram for microcrack populations can be divided into three sections in terms of phases of the distribution of related curves. Especially, the linear middle section of each diagram of five groups represents a power-law distribution. The frequency ratio of linear middle sections of five groups ranges from 46.6% to 67.8%. Meanwhile, the slope of linear middle section of each group shows the order: group V($N60{\sim}90^{\circ}E$, -2.02) > group IV($N20{\sim}60^{\circ}E$, -1.55) > group I($N60{\sim}90^{\circ}W$, -1.48), group II($N10{\sim}60^{\circ}W$, -1.48) > group III($N10^{\circ}W{\sim}N20^{\circ}E$, -1.06). Five sub-populations(five groups) that closely follow the power-law length distribution show a wide range in exponents( -1.06 - -2.02). These differences in exponent among live groups emphasizes the importance of orientation effect. In addition, breaks in slope in the lower parts of the related curves represent the abrupt development of longer lengths, which is reflected in the decrease in the power-law exponent. Especially, such a distribution pattern can be seen from the diagram with $N10{\sim}20^{\circ}E,\;N10{\sim}20^{\circ}W$ and $N60{\sim}70^{\circ}W$ directional angles. These three directional angles correspond with main directions of faults developed around the study area. The distribution chart showing the individual characteristics of the length-cumulative frequency diagrams for 15 directional angles were made. By arraying above diagrams according to the categories of three groups(A, B and C), the differences in length-frequency distributions among these groups can be easily derived. The distribution chart illustrates the importance of analysing microcrack sets separately. From the related chart, the occurrence frequency of shorter microcracks shows the order: group A > group B > group C. These three types of distribution patterns could reveal important information on the processes occurred during microcrack growth.

• Proceedings of the PSK Conference
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• 2000.10a
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• pp.136.2-136.2
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• 2000

• Proceedings of the PSK Conference
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• 2001.04a
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• pp.121.1-121.1
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.34-35
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• 1996