• Investigative Magnetic Resonance Imaging
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• v.6 no.1
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• pp.41-46
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• 2002

The Fourier transform arteriography (FTA) exploits the periodic variation of arterial flow velociety of arterial flow velocity in stnchronized with cardiac cycles. This technique is intrinsically unique compared to other modern techniques. This technique separates the arteries from the veins using the pulsatile arterial flow without using the presaturation RF pulses. Therefore, it has less RF deposition and is free from the dark band artifacts that can arise from retrograde flow and curved arteries. Furthermore, it is free from the artifacts induced by eddy currents. However, there are some drawbacks such as a single projection view and the saturation of arteries at the end of an imaging slab. These drawbacks are circumvented by applying recently developed techniques. The fast gradient switching capability of modern MRI systems enabled us to incorporate dual projection views into the conventional FTA sequence without increasing the repetition time. In addition, signals from the distal arteries were enhanced by use of a ramped RF pulse and therefore the distal arteries were less saturated. By use of the FTA sequence with dual projection views and the ramped RF pulse, we acquired the sagittal and coronal projection views of femoral arteriograms simultaneously with more enhanced signals of distal arteries than the conventional FTA.

• The Journal of the Acoustical Society of Korea
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• v.18 no.5
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• pp.68-77
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• 1999

The paper looked into the effects of the spectral properties (waveform) of the high intensity focused ultrasound on suppression of the ultrasonic cavitation. Three different types of ultrasound were considered in the study, which were sinusoidal (1 MHz, 5 MPa), frequency modulated (from 1 MHz to 6 MHz for 10 ㎲, 5 MPa), asymmetrically shocked (fundamental frequency 1 MHz, peak positive pressure 12 MPa, peak negative pressure -4 MPa). The temporal response of an air bubble in water initially 1 ㎛ in radius to each type of the ultrasound was predicted using Gilmore bubble dynamic model and Church's rectified gas diffusion equation. It was shown that the radially pulsating amplitude of the bubble was greatly reduced for the frequency modulated wave and was little decreased for the shock wave, compared to the case that the bubble was exposed to the sinusoidal wave. It is interesting that the bubble response to the frequency modulated wave remains similar when the frequency component of the modulated ultrasound is beyond the bubble resonant frequency 3 MHz. This implies that, although the ultrasound is modulated up to 3MHz rather than up to the present 6 MHz, it is likely to produce similar cavitation suppression effects. In practice, it means that a typical narrow band ultrasonic transducer can be taken to generate an appropriate frequency modulated ultrasound to reduce cavitation activity. The present study indicates that ultrasonic cavitation may be suppressed to some extent by a proper spectral modification of high intensity ultrasound.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.9
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• pp.916-920
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• 2008

The personal workspace consists of user- specified computing environment such as user profile, applications and their configurations, and user data. Mobile computing devices (i.e., cellular phones, PDAs, laptop computers, and Ultra Mobile PC) are getting smaller and lighter to provide personal work-space ubiquitously. However, various personal work-space mobility solutions (c.f. VMWare Pocket ACE[1], Mojopac[2], u-PC[3], etc.) are appeared with the advance of virtualization technology and portable storage technology. The personal workspace can be loaded at public PC using above solutions. Especially, we proposed a framework called ubiquitous personal computing environment (u-PC) that supports mobility of personal workspace based on wireless iSCSI network storage in our previous work. However, previous u-PC could support limited applications, because it uses IRP (I/O Request Packet) forwarding technique at filter driver level on Windows operating system. In this paper, we implement OS-level virtualization technology using system call hooking on Windows operating system. It supports personal workspace mobility and covers previous u-PC limitation. Also, it overcomes personal workspace loading overhead that is limitation of other solutions (i.e., VMWare Pocket ACE, Mojopac, etc). We implement a prototype consisting of Windows XP-based host PC and Linux-based mobile device connected via WiNET protocol of UWB. We leverage several use~case models of our framework for proving its usability.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• Proceedings of the KSRS Conference
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• 2006.03a
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• pp.341-343
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• 2006

The current spectral shape matching method (SSMM), developed by Ahn and Shanmugam (2004), relies on the assumption that the path radiance resulting from scattered photons due to air molecules and aerosols and possibly direct-reflected light from the air-sea interface is spatially homogeneous over the sub-scene of interest, enabling the retrieval of water-leaving radiances ($L_w$) from the satellite ocean color image data. This assumption remains valid for the clear atmospheric conditions, but when the distribution of aerosol loadings varies dramatically the above postulation of spatial homogeneity will be violated. In this study, we present the second version of SSMM which will take into account the horizontal variations of aerosol loading in the correction of atmospheric effects in SeaWiFS ocean color image data. The new version includes models for the correction of the effects of aerosols and Raleigh particles and a method fur computation of diffuse transmittance ($t_{os}$) as similar to SeaWiFS. We tested this method over the different optical environments and compared its effectiveness with the results of standard atmospheric correction (SAC) algorithm (Gordon and Wang, 1994) and those from in-situ observations. Findings revealed that the SAC algorithm appeared to distort the spectral shape of water-leaving radiance spectra in suspended sediments (SS) and algal bloom dominated-areas and frequently yielded underestimated or often negative values in the lower green and blue part of the electromagnetic spectrum. Retrieval of water-leaving radiances in coastal waters with very high sediments, for instance = > 8g $m^{-3}$, was not possible with the SAC algorithm. As the current SAC algorithm does not include models for the Asian aerosols, the water-leaving radiances over the aerosol-dominated areas could not be retrieved from the image and large errors often resulted from an inappropriate extrapolation of the estimated aerosol radiance from two IR bands to visible spectrum. In contrast to the above results, the new SSMM enabled accurate retrieval of water-leaving radiances in a various range of turbid waters with SS concentrations from 1 to 100 g $m^{-3}$ that closely matched with those from the in-situ observations. Regardless of the spectral band, the RMS error deviation was minimum of 0.003 and maximum of 0.46, in contrast with those of 0.26 and 0.81, respectively, for SAC algorithm. The new SSMM also remove all aerosol effects excluding areas for which the signal-to-noise ratio is much lower than the water signal.

• The Korean Journal of Mycology
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• v.17 no.3
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• pp.137-144
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• 1989

Effects of incompatibility existing between intra-and interspecies in Pleurotus spp. on protoplast fusion, clamp formation of their fusants and fruitbody production were investigated. Protoplast fusion between intra-and interspecies of the fungus was achieved by Poly ethylene glycol treatment. The fusion frequency between intraspecies was a little higher than that of interspecies. Fusion frequency between interspecies was not correlated with their similarities based on isozyme patterns. In case of protoplast fusion between intra-and interspecies, the fusants from the compatible isolates produced normal fruit bodies, while those from the incompatible isolates did not produce clamp connections and fruit bodies except those of a few isolates presumed mutants.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.264-272
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• 2012

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.43 no.3 s.309
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• pp.76-83
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• 2006

A main objective of audio equalizer is for user to tailor acoustic frequency response to increase sound comfort and example applications of audio equalizer includes large-scale audio system to portable audio such as mobile MP3 player. Up to now, all the audio equalizer requires manual setting to equalize frequency bands to create suitable sound quality for each genre of music. In this paper, we propose an intelligent audio graphic equalizer system that automatically classifies the music genre using music content analysis and then the music sound is boosted with the given frequency gains according to the classified musical genre when playback. In order to reproduce comfort sound, the musical genre is determined based on two-step hierarchical algorithm - coarse-level and fine-level classification. It can prevent annoying sound reproduction due to the sudden change of the equalizer gains at the beginning of the music playback. Each stage of the music classification experiments shows at least 80% of success with complete genre classification and equalizer operation within 2 sec. Simple S/W graphical user interface of 3-band automatic equalizer is implemented using visual C on personal computer.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.26-31
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• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.