• Korean Journal of Materials Research
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• v.12 no.5
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• pp.414-422
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• 2002

Three different multi-component white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their as-cast and solidification structures. Three combinations of the alloying elements were selected so as to obtain the different types of carbides and matrix structures : 3%C-10%Cr-5%Mo-5%W(alloy No.1), 3%C-10%V-5% Mo-5%W(alloy No. 2) and 3%C-17%Cr-3% V(alloy No.3). The as-cast microstructures were investigated with optical and scanning electron microscopes. There existed two different types of carbides, $M_7C_3$ carbide with rod-like morphology and $M_6C$ carbide with fishbone-like one, and matrix in the alloy No. 1. The alloy No. 2 consisted of MC carbide with chunky and flaky type and needle-like $M_2C$ carbide, and matrix. The chunky type referred to primary MC carbide and the flaky one to eutectic MC carbide. The morphology of the alloy No. 3 represented a typical hypo-eutectic high chromium white cast iron composed of rod-like $M_7C_3$ carbide which is very sensitive to heat flow direction and matrix. To clarify the solidification sequence, each iron(50g) was remelted at 1723K in an alumina crucible using a silicon carbide resistance furnace under argon atmosphere. The molten iron was cooled at the rate of 10K/min and quenched into water at several temperatures during thermal analysis. The solidification structures of the specimen were found to consist of austenite dendrite(${\gamma}$), $ ({\gamma}+ M_7C_3)$ eutectic and $({\gamma}+ M_6C)$ eutectic in the alloy No. 1, proeutectic MC, austenite dendrite(${\gamma}$), (${\gamma}$+MC) eutectic and $({\gamma}+ M_2C)$ eutectic in the alloy No. 2, and proeutectic $M_7C_3$ and $ ({\gamma}+ M_7C_3)$ eutectic in the alloy No 3. respectively.

• Journal of Powder Materials
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• v.27 no.1
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• pp.52-57
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• 2020

In this study, we report the microstructure and characterization of Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloy powders and sintered samples. The effects of milling time on the microstructure and mechanical properties were investigated in detail. Microstructure and structural characterization were performed by scanning electron microscopy and X-ray diffraction. The mechanical properties of the sintered samples were analyzed through a compressive test at room temperature with a strain rate of 1 × 10^-4 s^-1. The microstructure of sintered Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloy is composed of a BCC phase and a TiO phase. A better combination of compressive strength and strain was achieved by using prealloyed Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ powder with low oxygen content. The results suggest that the oxide formed during the sintering process affects the mechanical properties of Ta₂₀Nb₂₀V₂₀W₂₀Ti₂₀ high-entropy alloys, which are related to the interfacial stability between the BCC matrix and TiO phase.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1706-1713
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• 2020

Functionally gradient material (FGM) is promisingly effective in mitigating the thermal stress between plasma facing materials (PFM) and structural materials. However, the corresponding research with respect to W/V FGM has not been reported yet. In this work, we firstly report the successful fabrication of W/V FGM by a combined technology of mechanical alloying (MA) and spark plasma sintering (SPS). The microhardness and microstructure of the consolidated sample were both investigated. W/V stacks show significantly enhanced microhardness (>100%) compared with pure W plate, which is beneficial to the integral strength of the hybrid structure. Furthermore, we clarify that the different ductility of W and V should be carefully considered, otherwise W/V powder might aggregate and lead to the formation of compositional segregation, and simultaneously unmask the impact of V proportion on the distribution of second phase in W-V binary alloy system. This work provides an innovative approach for obtaining W-V connections with much better performance.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.28 no.1
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• pp.53-60
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• 1992

In this study, cathodic protection experiment was carried out by Al-alloy sacrificial anode in marine environments which have specific resistance($\rho$) if 25~7000$\Omega$.cm and investigated protection potential, current density and loss rate of Al-alloy sacrificial anode. The main results resistance($\rho$) of 400$\Omega$.cm, the cathodic protection potential appears high about-720 mV(SCE). But below specific resistance($\rho$) of 300$\Omega$.cm, the cathodic protection potential appears low about-770 mV(SCE) and simultaneously, cathode is protected sufficiently. 2) The loss rate of Al-Alloy sacrificial anode became large with decreasing specific resistance and increasing the ratio(A sub(c)/A sub(a) of bared surface area of anode and cathode. 3) The loss rate of Al-alloy sacrificial anode(w) to the mean current density of anode(i) is as follows. w=ai+b (a, b : experimental constants)

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.168-173
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• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2000.10a
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• pp.349-354
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• 2000

A use of Titanium alloy as a structural material is increasing lately. Among those titanium alloys, Ti-6A1-4V alloy is the most popular one with taking 2/3 of it's market. Also, Ti-6A1-4V alloy can get the stability of organization and product measure, and the evaluation of the cutting ability and the mechanical characteristics. The point in titanium alloy work is on how treat the heat generated during grinding. Because the heat conductivity of titanium alloy is unnegligibly low, the grinding heat is accumulated in workpiece, and it cause the increasing of grinding grits' wear and the rough grinding surface. So, these characteristics in grinding of titanium alloy will change the mechanical characteristics of the titanium alloy. From this study, the mechanical characteristics of annealed Ti-6A1-4V alloy after grinding was concerned with checking out the bending strength values, and the factor of the change and the difference was analyzed after analyzing the surface roughness and the image from SEM.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.233-236
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• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.142-143
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.68-69
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• 2001