• Journal of Advanced Marine Engineering and Technology
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• v.28 no.4
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• pp.657-666
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• 2004

A Design of GA-based SPS controller for power system stabilization was investigated in this paper. The design problem of SPS controller is formulated as an optimization problem using GA. The dynamic characteristic responses are considered to verify the performance of the proposed SPS under various disturbances and operation conditions. The simulation results show that the proposed SPS controller provides most of the damping and improves greatly the voltage profile of the system under two different disturbances.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1986.04a
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• pp.206-210
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• 1986

Double Ion Implantation methods are used to improve the stiffness os carrier profiles, and then the analytical solutions to Poisson`s equation are derived with summation of each carrier profile. Numerical analyses are done using profer boudary conditions and the results show that the improvement of voltage-dependent-capacitance ratio (C(!)/C(25)) is obtained up to B.6. The third ion implantation is for the enhancement of the Schottky barrier height.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1419-1421
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• 2005

This paper presents theoretical and practical details about the design, implementation, and performance of a series resonant dc-to-dc converter using planar magnetics. Results of sinusoidal analysis are used to predict the voltage gain and conversion efficiency. The performance of a prototype converter is presented including the efficiency measurement and theoretical loss breakdown.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.286-289
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• 1991

We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.7
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• pp.119-125
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• 2012

This paper suggest the on-line coordination control between on-load tap changers and Switched Shunts for ensuring the voltage stability using local data obtained from one substation. Inappropriate control of on-load tap changers that are able to maintain voltage profile might cause unintended result that is harmful to system stability, especially voltage stability. This paper utilizes Z-index that could inform the whole system condition from only one substation data. Simulation is performed using the HYPERSIM that is a digital simulator and matlab simulink to confirm the proposed algorithm.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.132-138
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• 2004

We used the self-consistent one-dimensional model applied to FCT algorithm and FEM method in a wire-cylinder type reactor to study the characteristics of corona discharge plasma in air at the atmospheric pressure. At the pulsed do voltage and do voltage, we studied the changes of the characteristic of plasma by computing electron density profile according to the changes of voltage and the size of reactor. The changes of active radius from this result are compared with the data of Peek's. The numerical simulation results for a corona discharge plasma explain the physical mechanism of the discharge process and could be used to obtain the optimized parameters for designing the plasma reactor for pollution abatement.

• Journal of the Korean institute of surface engineering
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• v.32 no.4
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• pp.496-502
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• 1999

Electroplating of Ag and Au on the functional area of lead frames are required for good bonding ability in IC packaging. As the patterns of the lead frame become finer, development of new deposition technology has been required for solving problems associated with process control for uniform thickness on selected area. Sputtering was employed to investigate the adhesion between substrate Alloy42 and Ag film as a new candidate process alternative to conventional electroplating. Coating thickness of Ag film was controlled to 3.5$\mu\textrm{m}$ at room temperature as a reference. The deposition of film was optimized to ensure the adhesion by process parameters of substrate heating temperature at $100~300^{\circ}C$, sputter etching time at -300V for 10~30min, bias voltage of -100~-500V, and existence of Cr interlayer film of $500\AA$. The critical $load L_{c}$ /, defined as the minimum load at which initial damage occurs, was the highest up to 29N at bias voltage of -500V by scratch test. AFM surface image and AES depth profile were investigated to analyze the interface. The effect of bias voltage in sputtering was to improve the surface roughness and remove the oxide on Alloy42.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.817-820
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• 2009

To meet the high current load requirement from the high energy density realized by metal oxide and high power density graphite, we propose a novel hybrid supercapacitor consisting of Nb2O5 and KS6 graphite in 1.0 M LiPF6-EC:DEC (1:2). This new system exhibits a sloping voltage profile from 2.7 to 3.5 V during charging and presents a high operating voltage plateau between 1.5 and 3.5 V during discharging. The cell was tested at a current density of 100 mA/g with a cut-off voltage between 3.0 and 1.0 V. This novel energy storage system delivers the highest initial discharge capacity of 55 mAh/g and exhibits a good cycle performance.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.7
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• pp.712-722
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• 1992

Several voltage instability/collapse problems that have occurred in the electric utility industry worldwide have gained the attention of engineers and researchers of electric power systems. This paper proposes an effective calculation scheme of the extreme loading point and nose curves(P-V curves) using modified Newton-Raphson(N-R) load flow method and the Continuation Method. This method provides detail and visual information of the power system voltage profile and operating margin ro operators and planners. In this paper, a modified load flow claculation method for ill-conditioned power systems is introduced for the purpose of seeking more precise load flow solutions and nose curves, and the Continuation Method is also used as a part of the solution algorithm for the calculation of extreme loading point and nose curves. The conventional polar coordinate based N-R load flow program is modified to avoid numerical difficulties caused by the singularity of the Jacobian matrix occuring in the vicinity of extreme loading point of heavily loaded systems. Application results of the proposed method to Klos-Kerner 11-bus system and modified IEE-30-bus system are presented to assure the usefulness of the approach.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.