• 제목/요약/키워드: Voltage overshoot

검색결과 118건 처리시간 0.027초

Two Modified Z-Source Inverter Topologies - Solutions to Start-Up Dc-Link Voltage Overshoot and Source Current Ripple

  • Bharatkumar, Dave Heema;Singh, Dheerendra;Bansal, Hari Om
    • Journal of Power Electronics
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    • 제19권6호
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    • pp.1351-1365
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    • 2019
  • This paper proposes two modified Z-source inverter topologies, namely an embedded L-Z-source inverter (EL-ZSI) and a coupled inductor L-Z source inverter (CL-ZSI). The proposed topologies offer a high voltage gain with a reduced passive component count and reduction in source current ripple when compared to conventional ZSI topologies. Additionally, they prevent overshoot in the dc-link voltage by suppressing heavy inrush currents. This feature reduces the transition time to reach the peak value of the dc-link voltage, and reduces the risk of component failure and overrating due to the inrush current. EL-ZSI and CL-ZSI possess all of the inherent advantages of the conventional L-ZSI topology while eliminating its drawbacks. To verify the effectiveness of the proposed topologies, MATLAB/Simulink models and scaled down laboratory prototypes were constructed. Experiments were performed at a low shoot through duty ratio of 0.1 and a modulation index as high as 0.9 to obtain a peak dc-link voltage of 53 V. This paper demonstrates the superiority of the proposed topologies over conventional ZSI topologies through a detailed comparative analysis. Moreover, experimental results verify that the proposed topologies would be advantageous for renewable energy source applications since they provide voltage gain enhancement, inrush current, dc-link voltage overshoot suppression and a reduction of the peak to peak source current ripple.

계통 연계형 Hybrid Active NPC 인버터의 SiC MOSFET 오버슈트 전압 저감 (Reducing Overshoot Voltage of SiC MOSFET in Grid-Connected Hybrid Active NPC Inverters)

  • 이덕호;김예지;김석민;이교범
    • 전력전자학회논문지
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    • 제24권6호
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    • pp.459-462
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    • 2019
  • This work presents methods for reducing overshoot voltages across the drain-source of silicon carbide (SiC) MOSFETs in grid-connected hybrid active neutral-point-clamped (ANPC) inverters. Compared with 3-level NPC-type inverter, the hybrid ANPC inverter can realize the high efficiency. However, SiC MOSFETs conduct its switching operation at high frequencies, which cause high overshoot voltages in such devices. These overshoot voltages should be reduced because they may damage switching devices and result in electromagnetic interference (EMI). Two major strategies are used to reduce the overshoot voltages, namely, adjusting the gate resistor and using a snubber capacitor. In this paper, advantages and disadvantages of these methods will be discussed. The effectiveness of these strategies is verified by experimental results.

Feedback Voltage Detection 구조 및 향상된 과도응답 특성을 갖는 LDO regulator (LDO Regulator with Improved Transient Response Characteristics and Feedback Voltage Detection Structure)

  • 정준모
    • 전기전자학회논문지
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    • 제26권2호
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    • pp.313-318
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    • 2022
  • 피드백 전압 감지 구조는 기존 외부 출력 캐패시터의 제거로 인한 오버슈트 및 언더슈트 현상을 완화하기 위해 제안된다. 기존의 LDO 레귤레이터는 전원 공급 전압의 불균형으로 인해 발생하는 오버슈트 및 언더슈트를 겪는다. 따라서 제안된 LDO는 기존 LDO의 피드백 경로만 유지하면서 새로운 제어 경로를 형성하기 위해 보다 개선된 과도 응답을 갖도록 설계되었다. 새로운 제어 경로는 출력 단계에서 발생하는 오버슈트 및 언더슈트 현상을 감지한다. 이에, 패스 소자의 게이트 노드의 전류를 충방전함으로써 패스 소자의 동작 속도가 향상된다. 피드백 전압 감지 구조가 있는 LDO 레귤레이터는 3.3~4.5V의 입력 전압 범위에서 작동하며 3V의 출력 전압에서 최대 200mA의 부하 전류를 가집니다. 시뮬레이션 결과에 따르면 부하전류가 200mA일 때 언더슈트 조건에서는 73mV, 오버슈트 조건에서는 61mV이다.

IGBT 직렬 연결시 과전압 제한을 위한 게이트 구동기법 (An Imrpoved Gate Control Scheme for Overvoltage Clamping under IGBT Series Connection)

  • 김완종;최창호;현동석
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제48권2호
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    • pp.83-88
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    • 1999
  • Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

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Initial Firing Angle Control of Parallel Multi-Pulse Thyristor Dual Converter for Urban Railway Power Substations

  • Kim, Sung-An;Han, Sung-Wo;Cho, Yun-Hyun
    • Journal of Electrical Engineering and Technology
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    • 제12권2호
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    • pp.674-682
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    • 2017
  • This paper presents an optimal initial firing angle control based on the energy consumption and regenerative energy of a parallel multi-pulse thyristor dual converter for urban railway power substations. To prevent short circuiting the thyristor dual converter, a hysteresis band for maintaining a zero-current discontinuous section (ZCDS) is essential during mode changes. During conversion from the ZCDS to forward or reverse mode, the DC trolley voltage can be stabilized by selecting the optimal initial firing angle without an overshoot and slow response. However, the optimal initial firing angle is different depending on the line impedance of each converter. Therefore, the control algorithm for tracking the optimal initial firing angle is proposed to eliminate the overshoot and slow response of DC trolley voltage. Simulations and experiments show that the proposed algorithm yields the fastest DC voltage control performance in the transient state by tracking the optimal firing angle.

Design of DC-DC Boost Converter with RF Noise Immunity for OLED Displays

  • Kim, Tae-Un;Kim, Hak-Yun;Baek, Donkyu;Choi, Ho-Yong
    • Journal of Semiconductor Engineering
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    • 제3권1호
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    • pp.154-160
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    • 2022
  • In this paper, we design a DC-DC boost converter with RF noise immunity to supply a stable positive output voltage for OLED displays. For RF noise immunity, an input voltage variation reduction circuit (IVVRC) is adopted to ensure display quality by reducing the undershoot and overshoot of output voltage. The boost converter for a positive voltage Vpos operates in the SPWM-PWM dual mode and has a dead-time controller using a dead-time detector, resulting in increased power efficiency. A chip was fabricated using a 0.18 um BCDMOS process. Measurement results show that power efficiency is 30% ~ 76% for load current range from 1 mA to 100 mA. The boost converter with the IVVRC has an overshoot of 6 mV and undershoot of 4 mV compared to a boost converter without that circuit with 18 mV and 20 mV, respectively.

무손실 수동스너버를 갖는 고역율 부스트 정류기 (High-Power-Factor Boost Rectifier with a Passive Lossless Snubber)

  • 김만고
    • Journal of Advanced Marine Engineering and Technology
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    • 제22권5호
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    • pp.617-625
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    • 1998
  • A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is implemented with a MOSFET, is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. These equivalent circuits are analyzed so that the overshoot voltage across the main switch, the snubber current, and the turn-off transition time can be predicted analytically. From these results, the normalized overshoot voltage is reduced to 1 as $_W2T_on$ varies from zero to $\pi$/2, and then it is fIxed at 1 for $_W2T_on$> $\pi$/2. The peak snubber inductor current is directly proportional to the input current. The turn-offtransition time wltoffvaries from 0 to 2.57, depending on $_W2T_on$. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.

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IGBT 직렬 연결을 위한 턴-오프 게이트 구동기법 (An Improved Turn-Off Gate Control Scheme for Series Connected IGBTs)

  • 김완중;최창호;현동석
    • 전력전자학회논문지
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    • 제4권1호
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    • pp.99-104
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    • 1999
  • 최근 산업이 대규모화함에 따라 고압 전력 변환 장치의 필요성이 증가하고 있고, 이에 따라 전력용 반도체 소자의 직렬 구동이 많이 이용되고 있다. 소자의 직렬 구동은 소자간에 적절한 전압 분배가 이루어져 개별 소자에 정격이상의 과전압이 인가되는 것을 방지하는 것이 큰 관건이다. 또한 고전압 회로에서는 부유 인덕턴스에 의한 소자의 과전압도 방지하여야 한다. 본 논문에서는 직렬 연결된 IGBT의 턴-오프 과도상태시 컬렉터 전압 기울기 조절로 안정된 전압 분배와 과전압을 방지하는 새로운 게이트 구동기법을 제안한다. 제안하는 게이트 구동기법은 컬렉터 전압을 검출하여 능동적으로 게이트 신호를 제어함으로써 과전압을 제한한다. 새로운 IGBT 게이트 구동회로를 제작하고 직렬 연결된 IGBT 회로에 적용하여 게이트 구동기법의 타당성을 검증하였다.

빌딩용 직류배전 시스템의 3상 AC/DC 컨버터의 기동 시 과도상태 응답 개선 (Transient Response Improvement at Startup of Three Phase AC/DC Converter for DC Distribution System in Building Applications)

  • 신수철;이희준;이정효;나종국;원충연
    • 전력전자학회논문지
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    • 제18권2호
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    • pp.138-144
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    • 2013
  • Most of the DC loads have had the sensitive characteristics electrically for input voltage. In this system, power converter is operated after connecting with DC loads to minimize the overshoot of the control voltage that may occur during connection of the loads. But whenever starting the power converter, parameters in circuit are different because power converter has been connected with diverse load types at each startup time. This is cause of a disadvantage to PI controller design of power converter. In this paper, the novel voltage control method using sliding mode control theory has proposed. This control method minimizes the overshoot of control voltage at startup of power converter. Despite the variations of the system parameters, the proposed voltage controller has fast response and robustness characteristics such as PI and sliding mode controllers. The proposed controller was applied to the three-phase AC/DC converter and each performance of controller was verified.

IP 제어기를 이용한 통신 전원용 3상 PWM 컨버터의 전압 제어 (IP Voltage Controller of Three-phase PWM Converter for Power Supply of Communication System)

  • 신희근;김학원;조관열;지준근
    • 한국산학기술학회논문지
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    • 제12권6호
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    • pp.2722-2728
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    • 2011
  • 대용량 전원장치의 정류기는 입력전류의 고조파를 줄이기 위해, 입력 전류 제어기능을 갖는 3상 PWM 정류기의 적용이 확대되고 있다. 3상 PWM 정류기의 전압제어기는 일반적으로 PI 제어기가 사용되며, 출력 전압의 안정성을 얻고 신뢰성을 확보하기 위하여 전압 제어기는 출력전압의 과도상태에서 오버슈트(Overshoot)를 작게 설계한다. 그러나 부하 변동이 급격한 대용량 통신용 전원 장치에 3상 PWM 정류기가 적용될 경우 빠른 부하 변동에 대한 안정적 전압 응답을 얻기 위하여 보다 넓은 대역폭을 갖도록 전압 제어기를 설계할 필요가 있다. 넓은 대역폭을 갖는 PI 제어기는 과도한 출력전압의 오버슈트가 발생될 수 있으며, 이 과도한 출력전압 오버슈트는 통신용 전원의 안정성을 해칠 수 있다. 본 논문에서는 과도 상태에서 출력전압의 오버슈트를 작게 하기 위하여 IP 제어기를 갖는 3상 PWM 정류기의 전압 제어기를 제안한다. 제안된 전압 제어기는 3상 PWM 정류기의 기동 시와 부하 변동시의 과도 응답특성을 개선될 수 있음을 시뮬레이션 및 실험을 통해 확인하였다.