• Journal of Electrical Engineering and Technology
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• v.7 no.4
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• pp.601-605
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• 2012

Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.63-64
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• 2006

Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

• 전기의세계
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• v.18 no.2
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• pp.7-14
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• 1969

From the first customer located right at the substation to the last customer at the end of the line, voltage must be held within close limits, so the voltage regulation is more important than the thermal limit. On a typical distribution system during the peak load period, the voltage drop may be serious enough to cause unsatisfactory operation of home appliances in the residential area, and present many problems to manufacturing industries, where the voltage must be maintained within close limits to insure smooth operation. Among all the factors contributing to voltage drop in the distribution system, the voltage drop in the distribution transformer may account for 30% of this figure. If we can eliminate this factor, the power companies can provide better quality electricity to more customers with the existing distribution facilities, thus saving on initial investment costs. Taking all these problems into consideration, the author undertook the design of a capacitive transformer which would give zero voltage drop at rated load and at 80% lagging power factor while incorporating overload features to withstand 400% overload for at least 100 seconds. The following are the results obtained through design, manufacture and test of an initial experimental transformer built with these specific purposes.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.50 no.3
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• pp.140-145
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• 2001

The instantaneous voltage drop is occurred when the fault is happened on the nearby feeders. The instantaneous voltage drop is continued during relatively short period. But, the effect of it can be very severe to some sensitive devices. That is, it can be the reason of restart or malfunction of some devices. And these phenomenons can cause the enormous economical damage and shorten the lifetime of the devices. In this paper, the device which can compensate the instantaneous voltage drop, is studied. Through the computer simulation using PSCAD/EMTDC, the validity of the control algorithm using peak detection method is verified. And the Dynamic Voltage Restorer(DVR) prototype is designed and constructed. Through the experiment, the function and performance of the DVR prototype is verified.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.161-164
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• 2000

A simple methode for calculating the forward voltage drop of IGBTs is presented, on the voltage drops on the p+ body, the reverse biased depletion region between p+body and epi-layer, the epi layer, and the forward biased collector junction. The decrease of the total current density in the epi layer near the p+ body is taken into account. The proposed methode allows a simple but accurate determination of the forward voltage drop in IGBTs, avoiding the complex path taken in the previous model for the forward voltage drops on channel, accumulation region, and epi region. Numerical simulations for 1kV NPT-IGBT with a uniformly doped collector are shown to support the analytical results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.609-613
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• 2023

In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 ㎛, and the on-state voltage drop was the lowest at 3.5 ㎛. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.1
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• pp.80-87
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• 2016

This study investigates output voltage variation of a voltage disturbance generator in case of sag and swell modes. The generator uses series transformers and silicon-controlled rectifier thyristors to provide voltage disturbance; consequently, voltage drop at the output terminal is inevitable. On the basis of the analysis, voltage drop increases as the power factor decreases in lagging. Voltage drop is 3.7 [%] at a power factor (lagging) of 0.8. Simulation and experimental results show the validity of the analysis.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2206-2214
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• 2011

LDC(Line Drop Compensation) is widely used in controlling ULTC(Under Load Tap Changer) output voltage at distribution substation. However, LDC may experience some difficulties in voltage control due to renewable energy resources and distributed generations. Therefore, more advanced voltage control algorithm is necessary to deal with these problems. In this paper, a modified voltage control algorithm for ULTC and DG is suggested. ULTC is operated with the voltages measured at various points in distribution system and prevents overvoltage and undervoltage in the distribution feeders. Reactive power controller in DG compensates the voltage drop in each distribution feeders. By these algorithms, the voltage unbalance between feeders and voltage limit violation will be reduced and the voltage profile in each feeder will become more flat.

• Proceedings of the KIEE Conference
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• summer
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• pp.1202-1204
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• 2004

This paper propose the control algorithm for improving the power quality through the voltage compensation when source voltage is dropped. The algorithm signified occurrence of voltage drop in source voltage of each phase storing source voltage for two cycles using the concept of moving average and using the source voltage of last half cycle. If there are voltage drops in the source voltages, series active power filter compensates the differences between reference waveform and source voltage waveform. Therefore, voltage drop is compensated. It proposed series active power filter of three phases three lines to apply to the proposed algorithm and the presented experiment results verified logicality and effectiveness of the proposed algorithm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.