• The Transactions of the Korean Institute of Electrical Engineers A
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• v.49 no.11
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• pp.531-535
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• 2000

A method to compute the reactive powers of the added buses by the decoupled UPFC model for the optimal voltage profile is presented, by which the voltage magnitudes of PQ buses can get closer to the reference value(usually one p.u.). The performance index for assessing how much the voltage magnitude is closer to the reference value is defined as the squared sum of the present voltage minus the reference voltage multiplied by the weighting number associated with the relative importance of the buses. Numerical example in a 10-unit 39-bus power system with 2 UPFC's shows that the performance index can be very much reduced by operating many UPFC's with the reactive powers for the optimal voltage profile proposed in this paper.

• Journal of information and communication convergence engineering
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• v.9 no.3
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• pp.310-314
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• 2011

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.58-64
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• 1984

A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.4
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• pp.903-908
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• 2015

This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.

• Proceedings of the KIEE Conference
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• 2000.07a
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• pp.265-267
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• 2000

A method to compute the reactive powers of the added buses by the decoupled UPFC model for the optimal voltage profile is presented, by which the voltage magnitudes of PQ buses can get closer to the reference value(usually one p.u.). The performance index for assessing how much the voltage magnitude is closer to the reference value is defined as the squared sum of the present voltage minus the reference voltage multiplied by the weighting number associated with the relative importance of the buses. Numerical example in a 10-unit 39-bus power system with 2 UPFC's shows that the performance index can be very much reduced by operating multi UPFC's with the reactive powers for the optimal voltage profile proposed in this paper.

• Journal of Power Electronics
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• v.6 no.1
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• pp.83-93
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• 2006

A new high efficiency and low profile on-board DC/DC converter for digital car audio amplifiers is proposed. The proposed converter shows low conduction loss due to the low voltage stress of the secondary diodes, a lack of DC magnetizing current for the transformer, and a lack of stored energy in the transformer. Moreover, since the primary MOSFETs are turned-on under zero-voltage-switching (ZVS) conditions and the secondary diodes are turned-off under zero-current-switching (ZCS) conditions, the proposed converter has minimized switching losses. In addition, the input filter can be minimized due to a continuous input current, and an output inductor is absent in the proposed converter. Therefore, the proposed converter has the desired features, high efficiency and low profile, for a viable power supply for digital car audio amplifiers. A 60W industrial sample of the proposed converter has been implemented for digital car audio amplifiers with a measured efficiency of $88.3\%$ at nominal input voltage.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.279-286
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• 2017

In this paper, an optimal approach for the wide-area regulation of control devices in a transmission network is proposed. In order to realize an improved voltage profile and reduced power loss, existing devices such as tap-changing transformers, synchronous machines, and capacitor banks should be controlled in a coordinated and on-line manner. It is well-understood that phasor measurement units in transmission substations allow the system operators to access the on-line loading and operation status of the network. Accordingly, this study proposes efficient software applications that can be employed in area operation centers. Thus, the implanted control devices can be regulated in an on-line and wide-area coordinated approach. In this process, efficient objective functions are devised for both voltage profile improvement and power loss reduction. Subsequently, sensitivity analysis is carried out to determine the best weighting factors for these objectives. Extensive numerical studies are conducted on an IEEE 14-bus test system and a real-world system named the Azarbayjan Regional Transmission Network. The obtained results are discussed in detail to highlight the promising improvements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.60-64
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• 2020

In this study, to develop angle ring pressboards for high voltage transformers, the radius and thickness are modified under the conditions of temperature and humidity. In particular, a pressboard with a thickness of 6 mm and a radius at the angled part were investigated based on the simulation of the principal stress from the angled optimization profile shape. As a result, by the appropriate application of a higher temperature, the solid insulation can be improved to reduce the moisture content for an optimized profile angle of a high voltage transformer. This also results in the improvement of the safety factor by 25%. It is determined that the electrical insulation properties of pressboards in high voltage transformers can be enhanced by improving their properties.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.12
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• pp.1689-1696
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• 2017

In this paper, the voltage measurement-based coordinated Voltage/VAR control (VMCVVC) algorithm for conservation voltage reduction(CVR) is proposed. The proposed algorithm has the purpose of enhancing the CVR effect through coordinated control of the voltage control devices such as the distributed energy resources and the load tap changer(LTC) transformers. It calculates the references of the voltage control devices such that the bus voltages are maintained at as close to the lower operation limit as possible. For this purpose, firstly, the distribution system is divided into LTC transformer control zones through topological search. Secondly, the reactive power references of the reactive power control devices are determined such that the voltage profile of the section is flattened. Finally, the tap references of the LTC transformers are calculated to lower the voltage profile. The effectiveness of the proposed algorithm is demonstrated through case studies using IEEE test network.

• Advances in Energy Research
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• v.4 no.2
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• pp.163-176
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• 2016

Rapid depletion of fossil based oil, coal and gas reserves and its greater demand day by day necessitates the search for other alternatives. Severe environmental impacts caused by the fossil fire based power plants and the escalating fuel costs are the major challenges faced by the electricity supply industry. Integration of Distributed Generators (DG) especially, wind and solar systems to the grid has been steadily increasing due to the concern of clean environment. This paper focuses on a new simple and fast load flow algorithm named Backward Forward Sweep Algorithm (BFSA) for finding the voltage profile and power losses with the integration of various sizes of DG at different locations. Genetic Algorithm (GA) based BFSA is adopted in finding the optimal location and sizing of DG to attain an improved voltage profile and considerable reduced power loss. Simulation results show that the proposed algorithm is more efficient in finding the optimal location and sizing of DG in 15-bus radial distribution system (RDS).The authenticity of the placement of optimized DG is assured with other DG placement techniques.