• Journal of Korean Society of Steel Construction
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• v.22 no.5
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• pp.477-485
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• 2010

Various monitoring sensors are used to predict and detect structural damage. Smart sensors, such as glass-fiber sensors, PZT, and MEMS, among others, have replaced traditional sensors. They are now being used in many areas. This study aims to predict the damage by measuring the PZT voltage attached on the specimen by the applied impact load. In the experiment to detect damages in beam connection, simple $H-400{\times}200{\times}8{\times}13$ beams were spliced with bolts. The results of FFT between PZT sensor and accelrometer were compared to measure the sensitivity of the PZT sensor. The damage to the beam was presumed by loosening the bolt, and then the damage measurement was accompanied. Secondly, a steel $PL600{\times}65{\times}5.8$ plate beam was fabricated for the purpose of experimenting on damage measurement. Impact loading test on three different locations was carried out. Damage width varied between 6~42mm on both sides by cutting, using a steel saw. The ratio of frequencies before and after the damage was computed to quantify the damage level by using FFT, and the change in mode pattern with the increased damage was investigated to measure the damage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.2
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• pp.104-115
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• 2002

Core is the main component of inductor. This core should be classified into around 10 classes according to the value of inductance and Q. The coil should be winded with the outer-boundary of this core by different number of turns. Theses kind of precise inductors would be required in the future environment which PCs and communication devices demand more high speed and lower voltage level. It would be quite unefficient that only one core is classified once a time. There, it will be developed so that 10 cores are classified simultaneously. For the operation of classifying 10 cores once in a time, suppose 10 test instruments could be used. In this case, it would take much cost since a test instrument Is expensive. So, by using only one test instrument, it is really more desirable that this system is developed. Each core classified by 10 different classes is to be stored into the corresponding box through the corresponding rubber hose. 10 cores are passed on a serial line and are placed on each testing slot. Here, each core located at each slot is tested, and then the bowl located on the top of a step motor is moved into the corresponding spot by rotating step motor with some angles. Each bowl connected with the corresponding box through rubber hose. Actually 100 hoses are connected, 10 step motors are rotated at 10 different angles, so the size is really so big, the shape of connecting 100 hoses is so complicated. Therefore it is anticipated that the system would be going to be easily out of ordered. In this paper the main purpose is to make several suggestions to be able to work well in these kinds of being affected by the abnormal operation of motors and the flow of cores.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.1-8
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• 2011

One of the most important parameters that limit maximum output power of transistor is breakdown. InAlAs/InGaAs/GaAs Metamorphic HEMTs (MHEMTs) have some advantages, especially for cost, compared with InP-based ones. However, GaAs-based MHEMTs and InP-based HEMTs are limited by lower breakdown voltage for output power even though they have good microwave and millimeter-wave frequency performance with lower minimum noise figure. In this paper, InAlAs/$In_xGa_{1-x}As$/GaAs MHEMTs are simulated and analyzed for breakdown. The parameters affecting breakdown are investigated in the fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs wafer using the hydrodynamic transport model of a 2D commercial device simulator. The impact ionization and gate field effect in the fabricated device including deep-level traps are analyzed for breakdown. In addition, Indium mole-fraction-dependent impact ionization rates are proposed empirically for $In_{0.52}Al_{0.48}As/In_xGa_{1-x}As$/GaAs MHEMTs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.27-35
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• 2008

This work proposes a 14b 150MS/s 0.13um CMOS ADC for SDR systems requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC employs a calibration-free four-step pipeline architecture optimizing the scaling factor for the input trans-conductance of amplifiers and the sampling capacitance in each stage to minimize thermal noise effects and power consumption at the target resolution and sampling rate. A signal- insensitive 3-D fully symmetric layout achieves a 14b level resolution by reducing a capacitor mismatch of three MDACs. The proposed supply- and temperature- insensitive current and voltage references with on-chip RC filters minimizing the effect of switching noise are implemented with off-chip C filters. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates a measured DNL and INL within 0.81LSB and 2.83LSB, at 14b, respectively. The ADC shows a maximum SNDR of 64dB and 61dB and a maximum SFDR of 71dB and 70dB at 120MS/s and 150MS/s, respectively. The ADC with an active die area of $2.0mm^2$ consumes 140mW at 150MS/s and 1.2V.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• Biomolecules & Therapeutics
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• v.13 no.2
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• pp.78-83
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• 2005

2,3,7,8-Tetrachlorodibenzo-p-dioxin(TCDD) has previously shown to induce neurotoxicity through intracellular $Ca^{2+}$ increase in rat neurons. In this study we investigated the role and signaling pathway of intracellular $Ca^{2+}$ in TCDD-induced inhibition of neuronal cell proliferation in SK-N-SH human neuronal cells. We found that TCDD(10nM) rapidly increased the level of intracellular $Ca^{2+}$, which was completely blocked by the extracellular $Ca^{2+}$ chelation with EGTA (1 mM) or by pretreatment of the cells with the non-selective cation channel blocker. flufenamic acid (200 ${\mu}M$). However, pretreatment of the cells with dantrolene (25 ${\mu}M$) and TMB-8(10 ${\mu}M$), intracellular $Ca^{2+}$-release blockers, or a voltage-sensitive $Ca^{2+}$ channel blocker, varapamil (100 ${\mu}M$), failed to block the TCDD-induced $Ca^{2+}$ increase in the cells. In addition, TCDD induced a rapid and transient activation of phatidvlinositol 3-kinase (PI3K) and extracellular signal-regulated kinase 1/2(ERK1/2), which was ingnificantly blocked by the pretreatment with BAPTA, an intracellular $Ca^{2+}$ chelator, and LY294002, a PI3K inhibitor. Furthermore, inhibitors of PI3K, ERK, or an intracellular $Ca^{2+}$ chelator further potentiated the anti-proliferative effect of TCDD in the cells. Collectively, the results suggest that intracellular $Ca^{2+}$ and PI3K-dependent activation of ERK 1/2 may be involved in the TCDD-induced inhibition of cell proliferation in SK-N-SH human neuronal cells.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.5
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• pp.492-501
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• 2013

In this paper, a multi polarization reconfigurable microstrip antenna that can be used selectively for four polarizations(vertical polarization, horizontal polarization, right hand circular polarization, left hand circular polarization) at the S-band is presented. The proposed antenna consists of four PIN diodes and a microstrip patch with a cross slot and a circular slot and is fed by utiliting electromagnetic coupling between the microstrip patch and the feed line. The proposed antenna has a DC bias network to supply DC voltage to each PIN diode and the polarization can be determined by controlling the ON /OFF states of four PIN diodes. The fabricated antenna has a VSWR below 2 in the vertical polarization(3.17~3.21 GHz), the horizontal polarization(3.16~3.20 GHz), the left hand circular polarization (3.08~3.19 GHz), and the right hand circular polarization(3.10~3.2 GHz) frequency bands. The designed antenna has the cross polarization level higher than 20 dB, a gain over 5 dBi for the linear polarization states, and 3 dB axial ratio bandwidth wider than 50 MHz in the circular polarization states.

• The Korean Journal of Physiology and Pharmacology
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• v.13 no.6
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• pp.437-442
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• 2009

A non-steroidal anti-inflammatory drug (NSAID) has many adverse effects including cardiovascular (CV) risk. Diclofenac among the nonselective NSAIDs has the highest CV risk such as congestive heart failure, which resulted commonly from the impaired cardiac pumping due to a disrupted excitationcontraction (E-C) coupling. We investigated the effects of diclofenac on the L-type calcium channels which are essential to the E-C coupling at the level of single ventricular myocytes isolated from neonatal rat heart, using the whole-cell voltage-clamp technique. Only diclofenac of three NSAIDs, including naproxen and ibuprofen, significantly reduced inward whole cell currents. At concentrations higher than $3\;{\mu}M$, diclofenac inhibited reversibly the $Na^+$ current and did irreversibly the L-type $Ca^{2+}$ channels-mediated inward current $(IC_{50}=12.89\pm0.43\;{\mu}M)$ in a dose-dependent manner. However, nifedipine, a well-known L-type channel blocker, effectively inhibited the L-type $Ca^{2+}$ currents but not the $Na^+$ current. Our finding may explain that diclofenac causes the CV risk by the inhibition of L-type $Ca^{2+}$ channel, leading to the impairment of E-C coupling in cardiac myocytes.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.2
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• pp.168-172
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• 2014

A new sustain driving method is proposed to improve luminous efficiency by the generation of the self-erasing discharge during a sustain period in AC plasma display panel. As one subfield time in the conventional AC PDP is divided into the reset, address, and sustain period. Among them, as the square sustain waveform is alternately applied to the X and Y electrodes on the front plate during the sustain period, the plasma discharge for displaying the image is continuously produced. Meanwhile, in the conventional driving method, the address waveform applied to the A electrode on the rear plate is only driving during an address period and grounded during a sustain period. In this experiment, the negative pulse is applied to the A electrode at the latter part of the sustain pulse for improving the luminous efficiency producing the self-erasing discharge during the sustain period. The negative pulse on the A electrode can change from the space to the wall charge and induce the additional discharge by the accumulated wall charge when the voltages of three electrodes are grounded. As a result, the luminous efficiency will be measured with changes in the voltage level of the A electrode and the new driving method can be improved to the luminous efficiency about 32 % compared with the conventional driving method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.