• 대한전자공학회논문지
• /
• 제27권11호
• /
• pp.83-91
• /
• 1990

전압제어 발진기(VCO:coltage controlled oscillator)는 FM 신호 변조, 주파수 안정기와 디지탈 클럭 재생과 같은 부분의 적용에 필수적인 기본회로이다. 본 논문에서는 BiCMOS 회로를 이용한 차동 증폭기를 사용하여 OTA(operational transconductance amplifier)회로와 OP amp를 설계하고 이를 토대로 하여 VCO 회로를 설계하였다. 그리고 이 VCO는 OTA와 전압 제어 적분기, 그리고 슈미트 트리거 회로로 구성이 되어 있다. 종래에는 CMOS를 사용하여 VCO를 설계하였지만 여기서는 구동능력이 좋은 BiCMOS를 사용하여 VCO를 설계하였다. 이 회로를 SPICE로 시뮬레이션 한 결과 출력 주파수는 105KHz에서 141KHz이며 변화 감도는 15KHz였다.

• 전력전자학회논문지
• /
• 제4권6호
• /
• pp.554-560
• /
• 1999

리니어 스텝핑 모터(Linear Stepping Motor : 이하 LSM이라 칭함)는 운동 변환기구 없이 입력신호에 따라 선형적인 변위를 발생시키는 다이렉트 드라이브(Direct Drive)방식의 전동기이다. 따라서 LSM은 자동반송장치, 의료기기, OA,FA 응용 등에 다양하게 사용되고 있다. 그러나 LSM은 구동시 구조적으로 큰 진동이 발생됨으로서 추력이 급격히 떨어질 때가 있으며, 최악의 경우에는 역전이나 탈조현상이 발생하고, 또한 소음의 원인이 되기 때문에 응용에 있어서 많은 제약을 받고 있는 실정이다. 여기에 대응하기 위해, 본 논문에서는 권선 인덕턴스에 저장된 에너지와 LSM의 유도전압을 이용한 새로운 1상 여자방식에 의한 진동억제 방법을 보여주며, 또한 LSM의 구조를 기초로 자기등가회로를 구성하였으며, 또한 자기등가회로에 대한 방정식을 이용하여 LSM의 전기적인 등기회로를 유도하였다. 그리고, LSM의 새로운 1상 여자방식에 의한 진동특성을 전압방정식과 추력방정식 및 운동방정식을 사용하여 ACSL에 의하여 시뮬레이션 하였으며, 레이저 실측 시스템에 의한 실측결과와 비교·검토하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.876-879
• /
• 2002

A novel driving technology of PDP, which enables to decrease the sustain voltage of conventional technology by half without lowering the gas discharging voltage. This technology, realizable without much increased cost of the semiconductor devices, gives a significant improvement in the power efficiency, essential for the design of a drive circuit for PDP. A comparative analysis and experimental results are presented to show the validity of the proposed driving technology.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2001년도 전력전자학술대회 논문집
• /
• pp.442-445
• /
• 2001

The sustaining driver for color ac plasma display panel should provide alternating high voltage pulses and recover the energy discharged from the intrinsic capacitance between the scanning and sustaining electrodes inside the panel. In this paper, a novel efficient energy recovery circuit employing boost-up function is proposed to achieve a faster rise-time and in order to obtain a stable sustain voltage. The principle of operation, features, and simulated results are illustrated and verified on an equivalent capacitance, which is equals In that of 40-inch-panel, 200 (kHz).

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
• /
• pp.1153-1155
• /
• 2005

This paper deals with dynamic characteristics of LSRM according to drive condition. First, in experiment of LSRM, position of LSRM detected approximation sensor. Position choose mover of LSRM and inductance. When approved current in each phase by decided position, we made sure current and voltage according to turn-on, turn-off. Second, in dynamic characteristic of LSRM, through an experiment, we decided turn-on position of inductance profile. Also, we presented dynamic characteristic analysis model which is consisted at motor and sensor signal part, etc., and substitute circuit constant that get using magnetic equivalent circuit method, we confirmed current and voltage waveform.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 하계학술대회 논문집 A
• /
• pp.464-466
• /
• 1996

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirements and high current density capability. When designing circuit and systems that utilize IGSTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 하계학술대회 논문집 A
• /
• pp.562-564
• /
• 1994

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i. e., efficient voltage gate drive requirements and high current density capability. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The protection circuit requirements are unique for the IGBT and can be examined using the model.

• Journal of Power Electronics
• /
• 제12권6호
• /
• pp.954-959
• /
• 2012

A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 하계학술대회 논문집 B
• /
• pp.833-836
• /
• 1993

A flyback type power converter circuit for switched reluctance motor drives is presented. In this converter circuit, the energy extracted from an off going phase is stored in an additional capacitor. The energy stored is used to either be returned to the source frequently or energize the conducting phase during the conduction interval through the transformer. The additional switch to pass the energy stored in the capacitor to the source or the conducting phase is switched under a relatively low voltage condition. Its switching frequency is relatively high so that the size of the transformer can be reduced. The design guideline for the capacitor and the transformer is described. The effectiveness of the presented converter circuit is compared to other circuits through the analysis and experiment.

• 한국조명전기설비학회:학술대회논문집
• /
• 한국조명전기설비학회 2007년도 춘계학술대회 논문집
• /
• pp.473-477
• /
• 2007

The development of advanced Insulated Gate Bipolar Transistor(IGBT)has enabled high-frequency switching operation and has improved the performance of PWM inverters for motor drive. However, the high rate of dv/dt of IGBT has adverse effects on motor insulation stress. In many motor drive applications, the inverter and motor are separated and it requires long motor feds. The long cable contributes high frequency ringing at the motor terminal and it results in hight surge voltage which stresses the motor insulation. The inverter output filter and RDC snubber are conventional method which can reduce the surge voltage. In this paper, we propose the new low loss snubber to reduce the motor terminal surge voltage. The snubber consists of the series connection of charging/discharging capacitor and the voltage-clamped capacitor. At IGBT turn-off, the snubber starts to operate when the IGBT voltage reaches the voltage-clamped level. Since dv/dt is decreased by snubber operating, the peak level of the surge voltage can be reduced. Also the snubber operates at the IGBT voltage above the voltage-clamped level, the snubber loss is largely reduced comparing with RDC snubber. The proposed snubber enables to reduce the motor terminal surge voltage with low loss.