• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.140-142
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• 2003

ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.6-8
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• 2005

The optical and electrical properties of indium tin oxide (ITO) thin films deposited at room temperature can be substantially enhanced by adopting a two-step process. In the first step, the films (50 nm thick) were grown by pulsed laser deposition (PLD) on glass substrate at room temperature and quickly annealed at $400^{\circ}C$ in nitrogen ambient for 1 minute by using rapid thermal annealing method. The process was completed by additional deposition (150 nm thick) on annealed film at room temperature. High quality ITO films grown by two-step process at room temperature could be obtained with the resistivity of $3.02{\times}10^{-4}{\Omega}cm$, the carrier mobility of 32.07 $cm^2/Vs$, and the transparency above 90 % in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.336.2-336.2
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• 2014

Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.

• Rapid Communication in Photoscience
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• 제4권1호
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• pp.25-28
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• 2015

The time-resolved photoexcitation dynamics of electrical conductivity of the magnetic organic superconductor ${\lambda}-(BETS)_2Fe_{0.45}Ga_{0.55}Cl_4$ has been studied with a nanosecond visible laser pulse at its three different phases, i. e., metallic phase, superconducting phase and insulating phase. A transient increase of the resistance is induced by photoirradiation at all the temperatures measured for all three phases, but the decay profile shows a significant temperature dependence. The relaxation rate in the metallic and insulating phase are different from each other, and the decay time is relatively faster and almost constant in the metallic phase. However, a prolongation of the relaxation time is observed at temperature just around the narrow superconducting phase. Nonbolometric (nonthermal) origin of the observed photoresponse of the electrical conductivity is confirmed in the superconducting phase.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.99-103
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• 2015

One-dimensional photonic crystals (1D PCs) were fabricated by RF sputtering technique on p-Si (100), and fused quartz substrates. The 1D PCs structures consisted of $TeO_x$ (x=1.42), and $SiO_2$ with the difference refractive index. In order to estimate the effect on a defect level within 1D PCs structures, samples were prepared with both normal, and defect mode. The structural and optical properties were confirmed by Scanning electron microscope (SEM), and Ultraviolet visible near-infrared spectrophotometer (UV-VIS-NIR) respectively. In the case of a 1D PC normal mode without defect layer, it had a photonic band gap (PBG) in the near infrared (NIR) region. In the case of a 1D PC defect mode with defect layer, it had a sharp transmission band owing to a defect level, and moved towards the longer wavelength after exposing He-Cd laser with a wavelength of 325 nm.

• 한국수소및신에너지학회논문집
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• 제23권5호
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• pp.538-544
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• 2012

The bubbles made of hydrogen and oxygen gases producted by electrolysis disturb the electrolysis, but the behavior of these bubbles in the electrolysis stack isn't clearly defined. In order to study on the behavior of bubbles in the flow pattern of the meshes type separator, the flow visualization experiment was performed by using of a visible alkaline electrolysis stack and a stereoscopic microscope. As the results, a fine size bubbles adhered to the separator's surface in the electrolyte solution have grown large sized bubbles until each bubble's buoyance is lager than the sum of surface adhesion force and weight. And then the large bubbles flow into the upper area of the separator. Also, as wide area of the separator have been occupied by various sized bubbles, the electrolysis efficiency is declined.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2003년도 춘계학술발표논문집 (상)
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• pp.409-412
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• 2003

The 3-D shape use to effect of movie, animation, industrial design, medical treatment service, education, engineering etc... But it is not easy to make 3-D shape from the information of 2-D image. There are two methods in restoring 3-D video image through 2-D image; First the method of using a laser; Second, the method of acquiring 3-D image through stereo vision. Instead of doing two methods with many difficulties, I study the method of simple 3-D image in this research paper. We present here a simple and efficient method, called direct calibration, which does not require any equations at all. The direct calibration procedure builds a lookup table(LUT) linking image and 3-D coordinates by a real 3-D triangulation system. The LUT is built by measuring the image coordinates of a grid of known 3-D points, and recording both image and world coordinates for each point; the depth values of all other visible points are obtained by interpolation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.320-320
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• 2007

Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

• 한국광학회지
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• 제7권2호
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• pp.120-128
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• 1996

1at.% Er$^{3+}$ :LaF$_{3}$와 1at.%Er$^{3+}$ :YAlO$_{3}$ 결정체에 대해 780-820nm에서 펌핑하여 적색, 녹색 및 청색이 상방전환 형광 발생을 상온과 14K에서 연구하였다. 두 재료에 대해 Er$^{3+}$ 이온의 $^{4}$I$_{9}$ 2/준위를 펌핑하기 위해 연속 출력의 티나튬 사파이어 레이저를 사용하였다. 이러한 $^{4}$F$_{9}$ 2/, $^{4}$S$_{3}$2/, $^{2}$P$_{3}$2/로부터 상방전환의 형광 발생 과정이 다단계 흡수와 교차 완화의 에너지 전달에 의한 것임을 스펙트럼의 분석을 통행 밝혀내었다.

• 센서학회지
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• 제30권5호
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• pp.279-285
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• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.