• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.239-241
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• 2009

DRIE(Deep Ion Reactive Etching) 공정은 실리콘 웨이퍼를 식각하는 기술로서 Si wafer 비아 홀 제조에 주로 사용되고 있다. 즉, DRIE 공정은 식각 및 보호층 증착을 반복함으로써 직진성 식각을 가능하게 하는 공정이다. 또한, 3차원 적층 실장에서 Si wafer 비아 홀에 결함없이 효과적으로 구리 충진을 하기 위해서는 직각형 via보다 경사벽을 가진 via가 형상적으로 유리하다. 본 연구에서는 3차원 적층을 위한 Si wafer 비아 홀의 결함 없는 효과적인 구리 충진을 위해, DRIE 공정을 이용하여 기존의 경사벽을 가지는 via 흘 형성 공정보다 더욱 효과적인 공정을 개발하였다.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.102-107
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• 1995

We review the copper CVD line, via fill properties, and CMP line resistance. With CVD, trenches and vias with high aspect ratio(above 3) can be filled completely. Sputtering-reflow technique, a new method to filling copper into lines, is also reviewed to compare the CVD process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.165-165
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• 2009

현재 반도체나 이동통신 분야는 사용자의 요구에 따라 PCB의 회로선폭이 갈수록 좁아지고 있다. 이러한 정밀 부품을 제조하기 위한 제조공정에서 각광받기 시작한 기술 중 하나가 대기압 플라즈마 기술이다. 본 연구에서는 미세패턴 형성이 가능한 에폭시 본딩 필름위에 무전해 도금공정을 통한 패턴 도금법을 이용하여 패턴을 형성하였고, 형성된 패턴에 대기압 플라즈마 처리 횟수에 따른 접촉각(Contact Angle)과 Peel Strength의 변화를 분석하였다. 또한 에폭시 본딩 필름을 이용한 Build-up공정을 거쳐 Micro Via를 형성하여 대기압 플라즈마 처리 횟수에 따른 Via 표면을 분석하였다. 대기압 플라즈마 기술은 진공식에 비해 소규모 장비를 이용한 전처리가 가능하고, 초기 설비비용을 절감하는데 탁월한 효과가 있어 널리 사용하는 기술 중 하나이다. 이 연구를 통하여 대기압 플라즈마 처리 횟수에 따른 표면에너지의 변화로 인한 접촉각이 좋아지는 것을 알 수 있으며, 대기압 플라즈마 처리를 한 패턴표면이 친수성으로 변하면서 현상된 드라이 필름 사이로 도금액이 원활히 공급되어서 미세패턴 모양이 우수하게 구현되었음을 알 수 있었다. 또한 Via Filling에도 뛰어난 효과가 있었음을 확인할 수 있었다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.9
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• pp.4145-4164
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• 2016

Energy harvesting is an increasingly attractive source of power for cellular networks, and can be a promising solution for green networks. In this paper, we consider a cellular network with power beacons powering multiple mobile terminals with microwave power transfer in energy beamforming. In this network, the power beacons are powered by grid and renewable energy jointly. We adopt a dual-level control architecture, in which controllers collect information for a core controller, and the core controller has a real-time global view of the network. By implementing the water filling optimized power allocation strategy, the core controller optimizes the energy allocation among mobile terminals within the same cluster. In the proposed green energy cooperation paradigm, power beacons dynamically share their renewable energy by locally injecting/drawing renewable energy into/from other power beacons via the core controller. Then, we propose a new water filling optimized green energy cooperation management strategy, which jointly exploits water filling optimized power allocation strategy and green energy cooperation in cellular networks. Finally, we validate our works by simulations and show that the proposed water filling optimized green energy cooperation management strategy can achieve about 10% gains of MT's average rate and about 20% reduction of on-grid energy consumption.

• Journal of Korean Society of Steel Construction
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• v.23 no.6
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• pp.737-745
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• 2011

A concrete-filled tube is a concrete-filled steel tube structure. The steel tube confines the concrete to increase the compressive strength, and the concrete contains the buckling of the tube. CFT structures require a diaphragm to prevent buckling of steel at connections. An outer diaphragm has better concrete filling than a through diaphragm due to a large bore, but being larger than the through diagram, it has poorer constructability and cooperation with building equipment. In this study, a CFT structure that uses different types of diaphragms in its upper and lower connections to improve the concrete filling was tested and analyzed via the FEM program. The building structure had a floor slab that was unified with the upper diaphragm, so the outer diaphragm was placed at the upper bound. Moreover, the through diaphragm was placed at the lower connection to avoid obstruction from building equipment. The CFT structure with the improved concrete filling showed the same structural behavior as the CFT structure with the use of the same type of diaphragms at the upper and lower connections.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• Journal of the Korean Society of Propulsion Engineers
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• v.22 no.5
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• pp.132-140
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• 2018

To lunch the Korea Space Launch Vehicle-II(KSLV-II), a second launch complex will be built at the Naro Space Center, and a Kerosene Filling System (KFS) will be installed. KFS of KSLV-II launch complex system is being designed based on Naro Launch Complex. But this must supply fuel to fuel tanks of the vehicle with only a supply pump because KSLV-II is a 3-stage launch vehicle unlike Naro Launch Vehicle or Test Launch Vehicle (TLV). A sudden rise of pump output pressure is recognized during fuel filling scenario selection process. This occurs because return flow can not actively deal with much flow change using the orifice-type flow-control method. To solve this problem, it is verified that fuel can be stably supplied by installing an accumulator, designed for appropriate adjustment of filling-mode change sequence via flow analysis of various cases.

• Journal of Korean Society of Steel Construction
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• v.27 no.3
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• pp.299-310
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• 2015

CFT(Concrete-Filled Tube) structures have problems at processing cause closed section and concrete filling problems. In this study, a CFT structure that uses different types of diaphragms in its upper and lower connections to improve the concrete filling was tested and analyzed via the FEM program. Implementation of variable analysis of EP-T type to find out the reason that effect on the resistance force of the connection. As a result, through experiments and analysis investigated the structural characteristics of circular CFT beam-to-column connection.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.583-588
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• 1999

The characteristics of copper thin films and pattern filling capability were investigated by ECD. Prior to deposition of copper film, seed-Cu/Ta(TaN)/$SIO_2$(BPSG)/Si structure was manufactured. Copper deposition was performed with various current waveforms(DC/PC, 1~10,000Hz) and current densities(10~60 mA/$\textrm{cm}^2$) after pretreatment (Oxident removal, wetting) of seed-layer. Conformal pattern filling was performed using PC method with fast deposition rate of 6,000~8,000$\AA$/min. Heat-treated($450^{\circ}C$, 30min) copper films showed good resistivities of 1.8~2.1$\mu$$\Omega$.cm. According to the XRD analysis, (111)-preferred orientation of copper film was found in ECD-Cu/seed-Cu/Ta/$Sio_2$/Si structure. Also, we have successfully achieved to fill via holes with 0.35$\mu\textrm{m}$ width and 4:1 aspect ratio.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.