• 한국전기전자재료학회논문지
• /
• 제19권7호
• /
• pp.662-666
• /
• 2006

Microstructure and electrical properties of ZnO varistors as a function of sintering temperature and times were investigated. Sintering temperature and times greatly affected electrical properties and Bi-rich liquid phase of the microstructure. The varistor which were sintered at $1125^{\circ}C\sim1150^{\circ}C$, for 2 hr exhibited the varistor voltage$(V_c)$, nonlinear coefficient $(V_{10mA}/V_{1mA})$, leakage current$(I_L)$ dielectric constant and dissipation factor as $225\sim250V/mm,\;0.89\sim0.92,\;0.8\sim1.1{\mu}A,\;720\sim740\;and\;1.8\sim2.0%$, respectively.

• 한국전기전자재료학회논문지
• /
• 제19권9호
• /
• pp.862-867
• /
• 2006

Bi-based nano-varistors and micro-varistors fabricated with each ZnO nano-powder and micro-powder were studied about characteristics on the surge capability in this study. ZnO nano-varistors were sintered in air at $1050^{\circ}C$ for 2 hr. The voltage-current and residual voltage properties of ZnO nano-varistor were compared with their of ZnO micrio-varistor. As a result of these properties, our ZnO nano-varistor has about 3 times at operating voltage as compared with conventional ZnO varistor fabricated with micro-powder and the residual voltage was 8.06 kV at nominal discharge current 101kA in the lighting impulse current test. And then the residual voltage rate 1.72 of our nano-varistor has had better performance than the 1.79 of micro-varistor because ZnO nano-varistor has shown much quick response property because of increasing effective cross-section area. Also, to analysis surge capability took thermal images for pyrexia temperature distribution with each of the varistors after operating varistors. Nano-varistor doesn't have shown local overheating and can confirm accurate temperature grade on the surface of its.

• 한국세라믹학회지
• /
• 제25권5호
• /
• pp.552-560
• /
• 1988

ZnO low voltage varistor was obtained by varying a) the amount of seed grains, b) the size of seed grains, and c) sintering temperature. Also, the optimum condition for fabricating the ZnO seed grains was studied. Large ZnO seed grains were obtained by washing a ZnO sintered body containing 1m/of BaCO3 in boiling water. When the seed grains were added, abnormal grain growth occurred, and the varistor voltage sharply decreased. However, when more than 5w/o of seed grain content was added, the varistor voltage gradually increased. When 10w/o seed grains of 75~106${\mu}{\textrm}{m}$ were added and sintered for 2 hours at 1200 to 125$0^{\circ}C$, low voltage varistor properties with V1mA/mm of 19V/mm and nonlinear exponent ($\alpha$) of 12 occurred.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.294-295
• /
• 2006

Varistor fabricated with ZnO nano-powder was studied about the characteristic of energy capability in this paper. ZnO nano-powder varistor were sintered in air at $1050\;^{\circ}C$. The electrical properties and residual voltage of ZnO nano-powder varistor were obtained. Our ZnO nano-powder varistor has about 3 times of electric field at varistor voltage as compared with commercial ZnO varistor fabricated with micro-powder. In the current impulse withstand test, our nano varistor has had better performance than micro varistor. To analysis energy capability take infrared images for pyrexia distribution of each varistor. ZnO Nano-powder varistor has shown much quick response property because of increasing effective cross-section.

• 전기학회논문지
• /
• 제56권12호
• /
• pp.2166-2172
• /
• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
• /
• pp.185-189
• /
• 2000

ZnO varistor has many merits as compared with SiC varistor. But, because of leakage current and non-linear coefficient, it has unstable function properties. For the purpose of improvement of ZnO varistor properties, ZnO varistor is studied according to sintering condition and mixing condition. ZnO varistor, $ZnO-Bi_2O_2-Y_2O_3-MnO-Cr_2O_3-Sb_2O_3$ series, is fabricated with $Sb_2O_3$ mol ratio(0.5-4[mol%]) and sintered at $1250[^{\circ}C]$ In accordance with $Sb_2O_3$ mol ratio and sintering temperature, grain size and non-linear coefficient are measured. The specimen, $Sb_2O_3$ mol ratio is 1[mol%], has small grain size. It has best properties because of its liquid phase shape. When $Sb_2O_3$ mol ratio is 1[mol%], grain size is decreased.

• 한국전기전자재료학회논문지
• /
• 제24권11호
• /
• pp.876-881
• /
• 2011

The sintering, defect and grain boundary characteristics of Bi-based ZnO chip varistor (1,608 mm size) have been investigated to know the possibility of lowering a manufacturing price by using 100 % Ag inner-electrode. The samples were prepared by general multilayer chip varistor process and characterized by shrinkage, SEM, current-voltage (I-V), admittance spectroscopy (AS), impedance and modulus spectroscopy (IS & MS) measurement. There are no problems to make a chip varistor with 100% Ag inner-electrode in the sintering temperature range of 850~900$^{\circ}C$ for 1 h in air. A good varistor characteristics ($V_n$= 9.3~15.4 V, a= 23~24, $I_L$= 1.0~1.6 ${\mu}A$) were revealed but formed $Zn_i^{{\cdot}{\cdot}}$(0.209 eV) as dominant defect, and increased the distributional inhomogeneity and the temperature instability in grain boundary barriers.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.705-709
• /
• 2003

The microstructure and electrical properties of the $Pr_6O_{11}$-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ amount. The varistor ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.85g/cm^3$ as $Tb_4O_7$ amount is increased. The calculated nonlinear exponent( ${\alpha}$ ) in varistor ceramics without $Tb_4O_7$ was only 8.9, whereas the ${\alpha}$ value of the varistor ceramics with $Tb_4O_7$ was abruptly increased in the range of 18.6 to 42.0. In particular, the maximum value(42.0) of ${\alpha}$ was obtained by doping of 1.0 mol% $Tb_4O_7$. The measured leakage current($I_{\ell}$) in varistor ceramics without $Tb_4O_7$ was $40.1{\mu}A$, whereas the $I{\ell}$ value of the varistors with $Tb_4O_7$ was very abruptly decreased below $5{\mu}A$. It is estimated that $Tb_4O_7$ additives will is applied usefully in development of varistors possessing high performance.

• 한국재료학회지
• /
• 제16권7호
• /
• pp.416-421
• /
• 2006

The varistor properties of ZPCCL-based ceramics were investigated at different $La_2O_3$ contents in the range of $0{\sim}2.0$ mol%. As $La_2O_3$ content increased, the ceramic density greatly increased in the range of $4.71{\sim}5.77\;g/cm^3$ and the varistor voltage greatly decreased in the range of $503.5{\sim}9.4$ V. The varistor with 0.5 mol% $La_2O_3$ exhibited good nonlinearity, in which the nonlinear exponent is 81.6 and the leakage current is 0.2 ${\mu}A$. Furthermore, the varistors exhibited the high electrical stability, with $%{\Delta}V_{1mA}=-1.1%,%{\Delta}{\alpha}=-3.7%$, and $%{\Delta}I_L=+100%$ for DC accelerated aging stress condition of 0.95 $V_{1mA}/150^{\circ}C/24$ h.

• 한국재료학회지
• /
• 제13권10호
• /
• pp.645-650
• /
• 2003

The microstructure and electrical characteristics of $Pr_{6}$ $O_{11}$ -based ZnO varistor ceramics composed of $ZnO-Pr_{6}$ $O_{ 11}$/$-CoO-Cr_2$$O_3$-$Dy_2$$O_3$-based ceramics were investigated with $Dy_2$$O_3$content in the range of 0.0∼2.0 mol%. As $Dy_2$$O_3$content was increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu\textrm{m}$ and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing $Dy_2$$O_3$content. The addition of $Dy_2$$O_3$highly enhanced the nonlinear properties of varistors, compared with the varistor without $Dy_2$$O_3$. In particular, the varistor with $Dy_2$$O_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of $(4.19∼0.33) ${\times}$10^{18}$ //㎤ and $(5.38∼1.74) ${\times}$10^{12}$ $\textrm{cm}^2$, respectively, with increasing $Dy_2$$O_3$content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% $Dy_2$$O_3$.