• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.311-320
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• 2008

In this paper, a new variable active inductor using a conventional grounded active inductor with feedback variable LC-resonator is proposed. The grounded active inductor is realized by the gyrator-C topology and the variable LC-resonator is realized by the low-Q spiral inductor and varactor. This variable LC-resonator can compensate the degradation of Q-factor due to parasitic capacitance of a transistor, and the frequency range with high Q-factor is adjustable by resonance frequency adjustment of LC-resonator. The fabricated variable active inductor with Magnachip $0.18{\mu}m$ CMOS process shows that high-Q frequency range can be adjusted according to varactor control voltage from 4.66 GHz to 5.45 GHz and Q-factor is higher than 50 in the operating frequency ranges. The measured inductance at 4.9GHz can be controlled from 4.12 nH to 5.97 nH by control voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.59-66
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• 2005

CMOS LC VCO for tri-bind wireless LAN applications was designed in 1.8V 0.18$\mu$m CMOS process. PMOS transistors were chosen for VCO core to reduce flicker noise. The possible operation was verified for 5.8GHz band (5.725$\~$5.825GHz), 5.2GHz band (5.150$\~$5.325GHz), and 2.4GHz band (2.412$\~$2.484GHz) using the switchable L-C resonators. To linearize its frequency-voltage gain (Kvco), optimized multiple MOS varactor biasing technique was used for capacitance linearization and PLL stability improvement. VCO core consumed 2mA current and $570{\mu}m{\times}600{\mu}m$ die area. The phase noise was lower than -110dBc/Hz at 1MHz offset for tri-band frequencies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1333-1338
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• 2008

In this paper, RF varactor diode are applied to the design of miniaturized and tunable bandstop filter. The proposed bandstop filter is based on a Defected Ground Structure(DGS) section topology. The designed tunable bandstop filter can achieve a significant size reduction by with loading capacitance component of varactor diode. It is observed from the measured results that the proposed tunable bandstop filter shows a wide tuning range of 42.9 % from 1.01 GHz to 1.99 GHz. The rejection level in the stopband is higher as the number of DGS section increases. In case of the proposed tunable bandstop filter with two DGS sections, the rejection level of the filter is better than 20 dB in the stopband during the tuning. In this case, the maximum insertion loss in the lower passband is 0.5 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.522-527
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• 2011

In this work, a 54 GHz divide-by-3 injection-locked frequency divider(ILFD) based on ring oscillator has been developed in a 0.13-${\mu}M$ Si RFCMOS technology for phase-locked loop(PLL) application. The free-running frequency is 18.92~19.31 GHz with tuning range of 0~1.8 V, consuming 70 mW with a 1.8 V supply voltage. At 0 dBm input power, the locking range is 1.02 GHz(54.82~55.84 GHz) and, with varactor tuning of 0~1.8 V, the total operating range is 2.4 GHz(54.82~57.17 GHz). The fabricated circuit size is 0.42 mm${\times}$0.6 mm including probing pads and 0.099 mm${\times}$0.056 mm for core area.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1652-1656
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• 2014

In this work, we demonstrated a 77 GHz waveguide VCO with transition from WR-12 to WR-10 for anti-collision radar applications. The fabricated waveguide VCO consists of a GaAs-based Gunn diode, a varactor diode, a waveguide transition, and two bias posts for operating as a LPF and a resonator. The cavity is designed for fundamental mode at 38.5 GHz and operated at second hormonic of 77 GHz. The waveguide transition has a 1.86 dB of insertion loss and -30.22 dB of S11 at the center frequency of 77 GHz. The fabricated VCO achieves an oscillation bandwidth of 870 MHz. Output power is from 12.0 to 13.75 dBm and phase noise is -100.78 dBc/Hz at 1 MHz offset frequency from the carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.262-268
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• 2010

In this paper, a high power active tunable bandpass filter made of dielectric resonators and varactor diodes is designed using the active capacitance circuit generating negative resistance for tuning cellular TX, RX band. An active capacitance circuit's series feedback circuit using GaAs HFET whose $P_{1dB}$ is 32 dBm is used for compensating the losses from the varactor diodes of the tunable bandpass filter. The tuning elements, the varactor diodes are used as the back-to-back configuration to achieve the high power performance, The designed active capacitance circuit improves the insertion loss characteristics. The designed 2-stage active tunable dielectric bandpass filter at cellular band can cover from 800 MHz to 900 MHz. The insertion losses at 836 MHz and 881.5 MHz with 25 MHz bandwidth are 0.48 dB and 0.39 dB, respectively. The $P_{1dB}$ of the designed bandpass filter at TX and RX band are measured as 19.5 dBm and 23 dBm, respectively.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.1
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• pp.10-18
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• 2014

In this paper, we propose a new frequency reconfigurable dual-band antenna. By using an electronically compact eighth-mode substrate-integrated-waveguide(EMSIW) resonator, we have designed a compact antenna, which performs dual-band movement by additionally loading a complementary split ring resonator(CSRR) structure. The EMSIW and CSRR structures are designed to satisfy the bandwidths of 1.575 GHz(GPS) and 2.4 GHz(WLAN), respectively. We load the CSRR with a varactor diode to allow a narrow bandwidth and to enable the resonance frequency to continuously vary from 2.4 GHz to 2.5 GHz. Thus, we realize a channel selection function that is used in the WLAN standards. Irrespective of how a varactor diode moves, the EMSIW independently resonates so that the antenna maintains a fixed frequency of the GPS bandwidth even at different voltages. Consequently, as the DC bias voltage changes from 11.4 V to 30 V, the resonance frequency of the WLAN bandwidth continuously changes between 2.38 GHz and 2.5 GHz, when the DC bias voltage changes from 11.4 V to 30 V. We observe that the simulated and the measured S-parameter values and radiation patterns are in good agreement with each other.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.613-614
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• 2008

• ETRI Journal
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• v.27 no.5
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• pp.473-483
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• 2005

In this paper, we propose two LC voltage-controlled oscillators (VCOs) that improve both phase noise and tuning range. With both 1/f induced low-frequency noise and low-frequency thermal noise around DC or around harmonics suppressed significantly by the employment of a current-current negative feedback (CCNF) loop, the phase noise in the CCNF LC VCO has been improved by about 10 dB at 6 MHz offset compared to the conventional LC VCO. The phase noise of the CCNF VCO was measured as -112 dBc/Hz at 6 MHz offset from 5.5 GHz carrier frequency. Also, we present a bandwidth-enhanced LC VCO whose tuning range has been increased about 250 % by connecting the varactor to the bases of the cross-coupled pair. The phase noise of the bandwidth-enhanced LC-tank VCO has been improved by about 6 dB at 6 MHz offset compared to the conventional LC VCO. The phase noise reduction has been achieved because the DC-decoupling capacitor Cc prevents the output common-mode level from modulating the varactor bias point, and the signal power increases in the LC-tank resonator. The bandwidth-enhanced LC VCO represents a 12 % bandwidth and phase noise of -108 dBc/Hz at 6 MHz offset.