• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.25-29
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• 2021

This paper demonstrates the utility of the Ni-Pd and carbon-nanotube (Ni-Pd-CNT)-based nanoalloy to improve the α-Ga₂O₃ crystal quality using the halide-vapor-phase epitaxy (HVPE) method. As result, the overall thickness of the α-Ga₂O₃ epitaxial layer increased from a Ni electroless plating time of 40 s to 11 ㎛ after growth. In addition, the surface morphologies of the α-Ga₂O₃ epilayers remained flat and crack-free. The full-width half-maximum results of the X-ray diffraction analysis revealed that the ($10{\bar{1}}4$) diffraction patterns decreased with increasing nominal thickness.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.135-139
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• 2014

The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.105-110
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• 2000

The $\alpha$-$Fa_{2}O_{3}/SnO_{2}$ thin film gas sensor was fabricated by APCVD and heat treated. The gas sensitivity to flammable gases ($CH_4$, $H_2$, LPG) was measured. This device was to heat treatment at $400^{\circ}C$, $450^{\circ}C$, $500^{\circ}C$, $550^{\circ}C$, $600^{\circ}C$ for 2 h to enhance the gas sensitivity. The heat treated device at $500^{\circ}C$ for 2 h had the best properties and especially it shows high sensitivity to H2 gas. The sensitivity to gases was studied in the temperature range from lOoC to $300^{\circ}C$ in order to find the optimum detection temperature. In the range of detection from 500 ppm to 10,000 ppm at $175^{\circ}C$ the fabricated device showed that the gas sensitivity to $H_2$ was from 62%~76% and to $CH_4$ was from 16 %~58% and to LPG was from 8%~37 %. The sensitivity difference between heat treated device and as fabricated one was about 10 8 The long-term stability to LPG at 1,000 ppm was converged to sensitivity of 30 %.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.183-189
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• 2012

Surface treatments and their effects on high temperature properties for the Hastelloy X, which is a promising candidate alloy for high temperature heat-transport system, have been evaluated. For TiAlN and $Al_2O_3$ overlay coatings, the two different PVD (physical vapor deposition) methods using an arc discharge and a sputtering, were applied, respectively. In addition, a different surface treatment method of the diffusion coating by a pack cementation of Al (aluminiding) was also adopted in this study. To achieve enhanced thermal oxidation resistance at $1000^{\circ}C$ by suppressing the inhomogeneous formation of thick $Cr_2O_3$ crust at the surface region, a study for the surface modification methods on the morphological and structural properties of Hastelloy X substrates has been conducted. The structural and compositional properties of each sample were characterized before and after heat-treatment at $1000^{\circ}C$ under air and He environment. The results showed that the Al diffusion coating showed the more enhanced high temperature properties than the overlay coatings such as the suppressed thick $Cr_2O_3$ crust formation and lower wear loss.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.6-17
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• 1997

Lithium niobate single crystals with various [Li]/[Nb] ratios were grown by the Czochralski method from melts having compositions varing between 48.6 ~ 58.0 mol % $Li_2O$. A vapor transport equilibration technique has been used to improve the homogeneity and adjust the [Li]/[Nb] ratio in small $LiNbO_3$ single crystals grown by the Czochralski method. When equilibrated with a Li-rich powder (65 mol%$Li_2O$), containing a mixture of $LiNbO_3$ and $Li_3NbO_4$, crystals of nearly stoichiometric composition can be obtained. This was established by studying the composition dependence of the following properties; lineshape, intensity and linewidth for the electron paramagnetic resonance (EPR) of $Fe^{3+}$ energy of the fundamental absorption edge and $OH^-$ absorption spectra.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.227-232
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• 2012

Inconel 617 and Hastelloy X are the most promising candidate materials for the heat exchanger of next generation nuclear reactor. Surface coating and its effects on high temperature properties for the Inconel 617 and Hastelloy X under molten FLiNaK (LiF-NaF-KF) salt environment have been investigated. For TiAlN and $Al_2O_3$ overlay coatings, the two different PVD (physical vapor deposition) methods of an arc discharge and a sputtering were applied, respectively. A study for the thermal stability of the surface modified Ni-Cr alloy substrates has been conducted. To evaluate the corrosion mechanism of Ni-Cr alloys in the molten salt, a ruptured Inconel pipe used for the molten salt transportation has been analyzed. The thermal properties of morphological and structural properties each sample were characterized before and after heat-treatment at $600^{\circ}C$ in molten FLiNaK salt. The results showed that the TiAlN and $Al_2O_3$ overlay coated specimens had the enhanced high temperature stability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.62-67
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• 2015

The carbon microspheres of a core-shell type were grown by the method of mixed-source hydride vapor phase epitaxy (HVPE). The surface and the cross section of the carbon microsphere grown by a new method were observed by scanning electron microscope (SEM). The characteristics of the carbon microsphere were investigated by X-ray photoelectron spectroscopy (XPS) and a high resolution-transmission electron microscope (HR-TEM). From these measurements, the diameters of carbon sphere were about few hundred micrometers. Furthermore, we show that the carbon microsphere of the core-shell type by mixed-source HVPE method can be grown successfully with the larger size than those of the existing one. This mixed-source HVPE method is proposed a new method for making of carbon microsphere.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.283-293
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• 2019

As applications in extreme environments such as aerospace, high-energy plasma and radio-active circumstances increases, the demand for materials that require higher melting points, higher mechanical strength and improved thermal conductivity continues to increase. Accordingly, in order to improve the oxidation/abrasion resistance of the carbon-carbon composite, which is a typical heat-resistant material, a method of using ultra high temperature ceramics was reviewed. The advantages and disadvantages of CVD coating, pack cementation and thermal plasma spraying, the simplest methods for synthesizing ultra-high temperature ceramics, were compared. As a method for applying the CVD coating method to C/C composites with complex shapes, the possibility of using thermodynamic calculation and CFD simulation was proposed. In addition, as a result of comparing the oxidation resistance of the TaC/SiC bi-layer coating and TaC/SiC multilayer coating produced by this method, the more excellent oxidation resistance of the multilayer coating on C/C was confirmed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.108-113
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• 2013

Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.2
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• pp.167-171
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• 2014

Using chemical vapor deposition(CVD), the synthesis of graphene was performed on poly and single crystalline Cu substrates. The growth behavior of graphene and its characterization were shown utilizing the optical microscopic image and its image analysis. As a result in the analysis of graphene growth, it was found out the graphene is growing always in particular direction in relation to the crystalline direction of a single grain in polycrystalline Cu substrate. With the image analysis it was possible to show the characterization of graphene, such as the growth direction and the number of layers showing single, double and triple layers, within the neighboring single grains in polycrystalline Cu. In addition, the relatively large area of graphene with about $3mm^2$ on Cu(111) having high quality, single layer, and single crystalline was shown along with its characterization.