• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.861-866
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• 2010

Tetrapod-shaped ZnO crystals were synthesized through a simple oxidation of metallic Zn powder in air without the presence of any catalysts or substrates. X-ray diffraction data revealed that the ZnO crystals had wurtzite structure. It is supposed that the growth of the tetrapod proceeded in a vapor-solid growth mechanism. As the amount of the source powder increased, the size of the tetrapod decreased. The tip morphology of the tetrapod changed from a needle-like shape to a spherical shape with the oxidation time. ZnO crystals with rod shape were fabricated via the oxidation of Zn and Sn mixture. Sn played an important role in the formation of ZnO crystals with different morphology by affecting the growth mode of ZnO crystals. The cathodoluminescent properties were measured for the samples. The strongest green emission was observed for the rod-shaped ZnO crystals, suggesting that the crystals had the high density of oxygen vacancies.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.288-294
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• 2016

The densification process during liquid-phase sintering was simulated by Monte Carlo simulation. The Potts model, which had been applied to coarsening during liquid-phase sintering, was modified to include vapor particles. The results of two- and threedimensional simulations showed a temporal decrease in porosity, in other words, densification, and an increase in the average size of pores. The results also showed growth of solid grains and the effect of wetting angle on microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.42-45
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• 1992

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.291.2-291.2
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• 2013

Growth behavior of b-Ga2O3 nanowires (NWs) on sapphire(0001) substrates during radio-frequency magnetron sputtering is reported. Upon fabrication, flat thin films grew initially, subsequent to which, NW bundles were formed on the surface of thin film with increasing film thickness. This transition of the growth mode occurred only at temperatures greater than ${\sim}450^{\circ}C$. The b-Ga2O3 NWs were grown through the self-catalytic vapor-liquid-solid mechanism with self-assembled Ga seeds. Secondary growth of NWs, which occurred from the sides of primary NWs resulting in branched NW structures, was also observed. Finally, the room temperature photoluminescence properties of as-grown and annealed b-Ga2O3 NW samples were investigated.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1067-1073
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• 1997

The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $\alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{\circ}C$. As deposition temperature (above 110$0^{\circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$\times$10-2 was about 0.097 S/cm at 104$0^{\circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.

• Bulletin of the Korean Chemical Society
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• v.28 no.11
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• pp.2056-2060
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• 2007

A successful combination of “oxygen-assisted chemical vapor deposition (CVD) process” and Co catalyst nanoparticles to grow highly pure single walled carbon nanotubes (SWNTs) was demonstrated. Recently, it was reported that addition of small amounts of oxygen during CVD process dramatically increased the purity and yield of carbon nanotubes. However, this strategy could not be applied for discrete Fe nanoparticle catalysts from which appropriate yields of SWNTs could be grown directly on solid substrates, and fabricated into field effect transistors (FETs) quite efficiently. The main reason for this failure is due to the carbothermal reduction which results in SiO2 nanotrench formation. We found that the oxygen-assisted CVD process could be successfully applied for the growth of highly pure SWNTs by switching the catalyst from Fe to Co nanoparticles. The topological morphologies and p-type transistor electrical transport properties of the grown SWNTs were examined by using atomic force microscope (AFM), Raman, and from FET devices fabricated by photolithography.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.462-462
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• 2013

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nanobelts, and nano-dots. In contrast to typical vaporliquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nanostructures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 chestnut burr were synthesized by using radio-frequency magnetron sputtering method. In contrast to typical sputtering method with sintered ceramic target, a Ga2O3 powder (99.99% purity) was used as a sputtering target. Several samples were prepared with varying the growth parameters, especially he growth time and the growth temperature to investigate the growth mechanism. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of Ga2O3 nano chestnut burr will be reported.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.1-273.1
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• 2014

Graphene, a two dimensional plane structure of $sp^2$ bonding, has been promised for a new material in many scientific fields such as physics, chemistry, and so on due to the unique properties. Chemical vapor deposition (CVD) method using transitional metals as a catalyst can synthesize large scale graphene with high quality and transfer on other substrates. However, it is difficult to control the number of graphene layers. Therefore, it is important to manipulate the number of graphene layers. In this work, homogeneous solid solution of Cu and Ni was used to control the number of graphene layers. Each films with different thickness ratio of Cu and Ni were deposited on $SiO_2/Si$ substrate. After annealing, it was confirmed that the thickness ratio accords with the composition ratio by X-ray diffraction (XRD). The synthesized graphene from CVD was analyzed via raman spectroscopy, UV-vis spectroscopy, and 4-point probe to evaluate the properties. Therefore, the number of graphene layers at the same growth condition was controlled, and the correlation between mole fraction of Ni and the number of graphene layers was investigated.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.80-84
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• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).