• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.291-297
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• 2013

ZnO nanowires were synthesized by vapor-liquid-solid (VLS) process using ZnO and graphite powders on the sapphire substrate coated with an Au film as a catalyst. ZnO nanowires had two prominent emission bands; i) near-band edge (NBE) emission band at 380 nm, and ii) a relatively stronger deep level (DL) emission band ($I_{NBE}/I_{DL}$ <1). In order for the ZnO nanowires to be utilized as an effective material for UV emitting devices, the photoluminescence intensity of NBE needs to be improved with the decreased intensity of DL. In the current study, hydrogen plasma treatment was performed to improve the photoluminescence characteristics of ZnO nanowires. With the hydrogen plasma treatment time of more than 120 sec, the extent of performance improvement was gradually decreased. However, the intensity ratio of NBE to DL ($I_{NBE}/I_{DL}$) was significantly improved to about 4 with a relatively short plasma treatment time of 90 sec, suggesting hydrogen plasma treatment is a promising approach to improve the photoluminescence properties of ZnO nanowires.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.299-303
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• 2006

In this paper, anode supported SOFC with columnar structured YSZ electrolyte was fabricated via Electron Beam Physical Vapor Deposition (EBPVD) method. Liquid condensation process was employed for the preparation of NiO-YSZ substrate and the high power electron beam deposition method was used for the deposition of YSZ electrolyte film. Double layered cathode with LSM-YSZ and LSM was printed on electrolyte via screen-printing method and fired at $1150^{\circ}C$ in air atmosphere for 3 h. The electrochemical performance and the long-term stability of $5{\times}5cm^2$ single cell were investigated with DC current-voltage characteristics and AC-impedance spectroscopy. According to the investigation, $5{\times}5cm^2$ sized unit cell showed the maximum power density of around $0.76W/cm^2$ at $800^{\circ}C$ and maintained the stable performance over 400 h.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.392-398
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• 2020

Producing solar grade silicon using an inexpensive method is a key factor in lowering silicon solar cell costs; the direct electrochemical reduction of SiO₂ in molten salt is one of the more promising candidates for manufacturing this silicon. In this study, SiO₂ granules were electrochemically reduced in molten CaCl₂ (850℃) using Ag-Si eutectic droplets that catalyze electrochemical reduction and purify the Si product. When Ag is used as the working electrode, the Ag-Si eutectic mixture is formed naturally during SiO₂ reduction. However, since the Ag-Si eutectic droplets are liquid at 850℃, they are easily lost during the reduction process. To minimize the loss of liquid Ag-Si eutectic droplets, a cylindrical graphite container working electrode was introduced and Ag was added separately to the working electrode along with the SiO₂ granules. The graphite container working electrode successfully prevented the loss of the Ag-Si eutectic droplets during reduction. As a result, the Ag-Si eutectic droplets acted as stable catalysts for the electrochemical reduction of SiO₂, thereby producing one-dimensional Si rods through a mechanism similar to that of vapor-liquid-solid growth.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.393-397
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• 2001

The innovatory process, that is the direct separation and recovery of the iron and zinc metals contained in the high temperature exhaust gas generated from the electric arc furnace fer the inn scrap melting and/or the dust treatment, has been proposed. This proposed process consists of the moving coke bed filter that is directly connected to the electric furnace, and the following heavy metal condenser. The exhaust gas passes through the filter and the condenser right after exhausting from the electric furnace. The moving coke bed filter is being controlled at about 1000℃ and collects iron and slag components contained in the high temperature exhaust gas. Heavy metals such as zinc and lead pass through the filter as vapor. Based on the thermodynamic considerations, the iron oxide and the zinc oxide are reduced in the filter. The solution loss reaction rate is comparatively low at about 1000℃ in the coke bed filter by the analysis using the mathematical simulation model. The heavy metal condenser is installed in the position after the coke bed filter, and rapidly cools the gas from about 1000℃ to 450℃ by a full of the cooling medium like the solid ceramic ball in addition to the cooling from the wall. The zinc and lead vapor condense and separate f개m the gas in a liquid state. The investigation of the characteristics of the exhaust gas of the commercial electric arc furnace, the fundamental experiments of the laboratory scale and the bench scale ensured the formation of this proposed process. A small-scale pilot plant examination is carrying out at present to confirm the formation of the process. It is certain that the dust generation of the electric arc furnace is extremely decreased, and it can save the energy consumption of usual dust treatment processes by the realization of this process.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• Journal of Powder Materials
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• v.27 no.6
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• pp.449-457
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• 2020

Iron and copper are practically immiscible in the equilibrium state, even though their atomic radii are similar. As non-equilibrium solid solutions, the metastable Fe-Cu alloys can be synthesized using special methods, such as rapid quenching, vapor deposition, sputtering, ion-beam mixing, and mechanical alloying. The complexity of these methods (multiple steps, low productivity, high cost, and non-eco-friendliness) is a hinderance for their industrial applications. Electrical explosion of wire (EEW) is a well-known and effective method for the synthesis of metallic and alloy nanoparticles, and fabrication using the EEW is a simple and economic process. Therefore, it can be potentially employed to circumvent this problem. In this work, we propose the synthesis of Fe-Cu nanoparticles using EEW in a suitable solution. The powder shape, size distribution, and alloying state are analyzed and discussed according to the conditions of the EEW.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.288-288
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• 2013

Lithium-ion battery (LIB) is one of the most important rechargeable battery and portable energy storage for the electric digital devices. In particular, study about the higher energy capacity and longer cycle life is intensively studied because of applications in mobile electronics and electric vehicles. Generally, the LIB's capacity can be improved by replacing anode materials with high capacitance. The graphite, common anode materials, has a good cyclability but shows limitations of capacity (~374 mAh/g). On the contrary, silicon (Si) and germanium(Ge), which is same group elements, are promising candidate for high-performance LIB electrodes because it has a higher theoretical specific capacity. (Si:4200 mAh/g, Ge:1600 mAh/g) However, it is well known that Si volume change by 400% upon full lithiation (lithium insertion into Si), which result in a mechanical pulverization and poor capacity retention during cycling. Therefore, variety of nanostructure group IV elements, including nanoparticles, nanowires, and hollow nanospheres, can be promising solution about the critical issues associated with the large volume change. However, the fundamental research about correlation between the composition and structure for LIB anode is not studied yet. Herein, we successfully synthesized various structure of nanowire such as Si-Ge, Ge-Carbon and Si-graphene core-shell types and analyzed the properties of LIB. Nanowires (NWs) were grown on stainless steel substrates using Au catalyst via VLS (Vapor Liquid Solid) mechanism. And, core-shell NWs were grown by VS (Vapor-Solid) process on the surface of NWs. In order to characterize it, we used FE-SEM, HR-TEM, and Raman spectroscopy. We measured battery property of various nanostructures for checking the capacity and cyclability by cell-tester.