• Journal of Electrochemical Science and Technology
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• v.9 no.3
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• pp.229-237
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• 2018

The electrochemical sensing performance of metal-graphene hybrid based sensor may be significantly decreased due to the dissolution and aggregation of metal catalyst during operation. For the first time, we developed a novel large-area high quality three dimensional graphene foam-incorporated gold nanoparticles (3D-GF@Au) via chemical vapor deposition method and employed as free-standing electrocatalysis for non-enzymatic electrochemical glucose detection. 3D-GF@Au based sensor is capable to detect glucose with a wide linear detection range of $2.5{\mu}M$ to 11.6 mM, remarkable low detection limit of $1{\mu}M$, high selectivity, and good stability. This was resulted from enhanced electrochemical active sites and charge transfer possibility due to the stable and uniform distribution of Au NPs along with the enhanced interactions between Au and GF. The obtained results indicated that 3D-GF@Au hybrid can be expected as a high quality candidate for non-enzymatic glucose sensor application.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.4
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• pp.1481-1490
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• 1996

This study is intend to improve flow pattern within evaporator, which is low quality and low mass flux, by installing narrow horizontal annular crevice so that enhance heat transfer coefficient. The motive, which made to study heat transfer enhancement by using narrow annular crevice, came from capillary phenomena and pumping force of generating vapor on refrigerant boiling. Tests were run about 5 models of turbulence promoter with CFC-12, in the range of evaporating temperature (15.deg. C), mass flux (50 to 100 kg/m$\^$2/s), heat flux (3.4 to 6.7 kW/m$\^$2/), quality (0.1 to O.5). It is observed that flow pattern within evaporator is changed closely to semi-annular flow or annular flow, of which refrigerant liquid is reached to the upper side of tube by using narrow annular crevice. When the narrow annular crevice is installed in the evaporator tube, local heat transfer coefficient is generally more improved than that of smooth tube. That fact is according to observed result of flow pattern. It is learned that narrow annular crevice has more efficiency at a low mass flux. At the TP-5, enhancement of heat transfer rate is about 170% compare to that of smooth tube on a low mass flux (50 kg/m$\^$2/s), and it is about 134% on a high mass flux (100 kg/M$\^$2/S), so that we know that it is on a very high condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1067-1073
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• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.916-923
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• 2004

In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.20-24
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• 2020

Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH₄/H₂ gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm²) size single crystal diamond substrate (100), the CH₄/H₂ gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

• Korean Journal of Food Science and Technology
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• v.27 no.6
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• pp.921-927
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• 1995

Peach pulp was separated into serum and insoluble pulp by centrifugation at 11,000 rpm for 10 min. The serum portion was concentrated at $50{\sim}55^{\circ}C$ and $30{\sim}50\;mmHg$ with aroma recovery. Vapor generated at the early stage of vacuum evaporation was condensed and taken as aroma fractions: AR-1($0{\sim}5%$), AR-2($5{\sim}10$), AR-3($10{\sim}15%$), AR-4($15{\sim}20%$). Dynamic headspace concentration method was used to trap volatile compounds in aroma fractions and identification of aroma compounds was made by GC/MS. The yield of serum separated from peach pulp was 70.5% and the serum fraction contained the most of aroma compounds. Thirty-one aroma compounds, including ethylene, benzaldehyde, l-limonene and ${\gamma}-dodecalactone$ were identified. The efficiency of aroma recovery was reduced, as the recovery time was extended, as indicated by less peak numbers and peach areas of aroma fractions.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• Korean Journal of Food Science and Technology
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• v.38 no.1
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• pp.16-21
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• 2006

Effect of heat (160, 190, and $220^{\circ}C$ for 24 hr) on coconut oil was examined by principal component analysis using electronic nose consisting of six metal oxide sensors. Increase in heating temperature decreased ratio of resistance and first principal component score (from +0.952 to -0.325), indicating rancidity of coconut oil increased at high heating temperature. Result of electronic nose based on GC with surface acoustic wave sensor showed significant changes in volatile profiles of coconut oil. High resolution olfactory imaging $(VaporPrint^{TM})$ was particularly useful for evaluating oil quality. Peak numbers and areas increased with increasing heating time and temperature (160, $220^{\circ}C$). Electronic nose analysis can provide simple, fast, and straightforward results and is best suited for quality control and process monitoring in flavor field of food industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.522-527
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• 2019

In order to fabricate high-quality SiC substrates for power electronic devices, various single crystal growing methods were prepared. These include the physical vapor transport (PVT) and top seeded solution growth (TSSG) methods. All the suggested SiC growth methods generally use induction-heating furnaces. The temperature distribution in this system can be easily adjusted by changing the hot-zone design. Moreover, precise temperature control in the induction-heating furnace is favorably required to grow a high-quality crystal. Therefore, in this study, we analyzed the heat transfer in these furnaces to grow SiC crystals. As the growth temperature of SiC crystals is very high, we evaluated the effect of radiation heat transfer on the temperature distribution in induction-heating furnaces. Based on our simulation results, a heat transfer strategy that controls the radiation heat transfer was suggested to obtain the optimal temperature distribution in the PVT and TSSG methods.