• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.5 no.3
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• pp.217-225
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• 1993

Nonflammable mixtures of flammable and nonflammable refrigerants are possible as substitute refrigerants for use in domestic heat pumps and refrigerators. Refrigerant leakage from such a system is of paramount concern since it is possible that the resulting mixture composition remaining in system will reside in the flammable range. This paper presents a simulation of a leakage process of refrigerant mixtures. Idealized cases of isothermal leakage process are considered in this study representing a slow leak. Simulation is performed for selected composition of binary and ternary refrigerant mixture; R-32/134a and R-32/125/134a. Mixture compositions with respect to percentage leak of original charge are presented. In isothermal leakage process, both vapor and liquid compositions of more volatile refrigerant decrease during vapor and liquid leak, but the total composition of this component decreases during vapor leak and increases during liquid leak. Vapor and liquid compositions are determined depending on the vapor-liquid equilibrium relation of the refrigerant mixture. The refrigerant mixture left in the system can go to a nonflammable direction relying on which component in the mixture is flammable.

• Proceedings of the SAREK Conference
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• 2008.11a
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• pp.157-164
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• 2008

The temperature-entropy diagram of water or vapor displays graphically the thermophysical properties, so it is very conveniently used in various thermal systems. On general T-s chart of water, there are temperature, pressure, quality, specific volume, specific enthalpy, specific entropy. However, various state and process values besides above properties can be plotted on T-s diagram. In this study, we developed the software drawing twenty six kinds of properties, that is temperature, pressure, quality, specific volume, specific internal energy, specific enthalpy, specific entropy, specific exergy, exergy ratio, density, isobaric specific heat, isochoric specific heat, ratio of specific heat, coefficient of viscosity, kinematic coefficient of viscosity, thermal conductivity, prandtl number, ion product, static dielectric constant, isentropic exponent, velocity of sound, joule-thomson coefficient, pressure coefficient, volumetric coefficient of expansion, isentropic compressibility, and isothermal compressibility. Also, this software can analyze and print the system values of mass flow rate, volume flow rate, internal energy flow rate, enthalpy flow rate, entropy flow rate, exergy flow rate, heat flow rate, power output, power efficiency, and reversible work. Additionally, this software support the functions such as MS-Power Point.

• Carbon letters
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• v.18
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• pp.37-42
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• 2016

Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method at different growth temperatures (1000℃, 1100℃, and 1200℃). The properties of graphene were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Raman spectroscopy. The results showed that the quality of the deposited graphene layer was affected by the growth temperature. XRD results showed the presence of a carbide phase on the Mo surface; the presence of carbide was more intense at 1200℃. Additionally, a higher I_2D/I_G ratio (0.418) was observed at 1200℃, which implies that there are fewer graphene layers at this temperature. The lowest I_D/I_G ratio (0.908) for the graphene layers was obtained at 1200℃, suggesting that graphene had fewer defects at this temperature. The size of the graphene domains was also calculated. We found that by increasing the growth temperature, the graphene domain size also increased.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.304-310
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• 2019

Chemical vapor deposition method using $CH_4$ gaseous hydrocarbons is generally used to synthesize large-area graphene. Studies using non-gaseous materials such as ethanol, hexane and camphor have occasionally been conducted. In this study, large-area graphene is synthesized via chemical vapor deposition using polyethylene as a carbon precursor. In particular, we used a poly glove, which is made of low-density polyethylene. The characteristics of the synthesized graphene as functions of the growth time of graphene and the temperature for vaporizing polyethylene are evaluated by optical microscopy and Raman spectroscopy. When the polyethylene vaporizing temperature is over $150^{\circ}C$, large-area graphene with excellent quality is synthesized. Raman spectroscopy shows that the D peak intensity increased and the 2D peak intensity decreased with increasing growth time. The reason for this is that sp3 bonds in the graphene can form when the correct amount of carbon source is supplied. The quality of the graphene synthesized using polyethylene is similar to that of graphene synthesized using methane gas.

• Journal of the Korean earth science society
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• v.43 no.2
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• pp.239-252
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• 2022

Quality control methods for the first G-band vapor radiometer (GVR) mounted on a weather aircraft in Korea were developed using the GVR Precipitable Water Vapor (PWV). The aircraft attitude information (degree of pitch and roll) was applied to quality control to select the shortest vertical path of the GVR beam. In addition, quality control was applied to remove a GVR PWV ≥20 mm. It was found that the difference between the warm load average power and sky load average power converged to near 0 when the GVR PWV increased to 20 mm or higher. This could be due to the high brightness temperature of the substratus and mesoclouds, which was confirmed by the Communication, Ocean and Meteorological Satellite (COMS) data (cloud type, cloud top height, and cloud amount), cloud combination probe (CCP), and precipitation imaging probe (PIP). The GVR PWV before and after the application of quality control on a cloudy day was quantitatively compared with that of a local data assimilation and prediction system (LDAPS). The Root Mean Square Difference (RMSD) decreased from 2.9 to 1.8 mm and the RMSD with Korea Local Analysis and Precipitation System (KLAPS) decreased from 5.4 to 4.3 mm, showing improved accuracy. In addition, the quality control effectiveness of GVR PWV suggested in this study was verified through comparison with the COMS PWV by using the GVR PWV applied with quality control and the dropsonde PWV.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.90.2-90.2
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• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.142-146
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• 2007

High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{\sim}900^{\circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.24-27
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• 2008

ZnO has intensively attracted interest for the next generation of short wavelength LEDs and semiconductor lasers. However, for the development and application of the devices based on this material, the fabrication of p-type ZnO thin films is pivotal. Generally, the process of preparation of ZnO is unavoidably accompanied by the natural donor ions such as interstitial Zn ions and oxygen vacancy ions that show n-type electrical property and make fabrication of p-type ZnO to be a hard problem. On this study, to realize stable high-quality p-type ZnO thin films, the undoped ZnO thin films were diffused with P in vapor state. The ZnO:P thin films showed high-quality p-type properties electrically and optically.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.79-85
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• 2018

Many studies have been conducted on large-scale graphene synthesis by chemical vapor deposition. Furthermore, numerous researchers have attempted to develop processes that can continuously fabricate uniform and high-quality graphene. To compete with other types of carbon materials (carbon black, carbon fiber, carbon nanotubes, and so on), various factors, such as price, mass manufacturing capability, and quality, are crucial. Thus, in this study, we examine various large-scale graphene production methods focusing on cost competitiveness and productivity improvements for applications in various fields.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.1
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• pp.7-16
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• 2015

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.