• 한국진공학회지
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• 제4권S1호
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• pp.168-173
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• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.272-277
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• 1995

We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.471-476
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• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.67-70
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.

• 한국결정학회지
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• 제6권2호
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• pp.69-74
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• 1995

Ge bicrystal 기판 위에 OMVPE 기법을 이용하여 GaAs 에피층을 성장시킴으로써 특정한 교차각을 갖는 GaAs 기울임입계를 제조하였다. 또한 (110) Ge 기판 위에 성장된 GaAs 에피층 내의 쌍정들로부터 ∑ =9 기울임입계들이 생성되었다. 고분해 투과전자현미경을 이용하여 1차 및 2차 쌍정계면들의 구조적 특징들을 고찰하였다. 입계에서의 결합극성은 특정한 회절조건에서 입계 양쪽의 입자로부터 기록된 (200) 수렴성 빔 디스크 내의 HOLZ 선 콘트라스트를 응용하여 파악하였으며, 원자컬럼이나 채널등과 상관된 구조상 콘트라스트 양태를 동일한 사진 내의 1차 쌍정계면 거울면의 콘트라스트로부터 파악하였다. ∑ =9, (115)/(111)[110] 기울입입계는 5-6-7- 모서리 링으로 구성된 단위구조를 나타내며, 입계 양쪽에 놓인 입자들은 입계에서 anti-site type cross-boundary bonding의 분율이 최소화되도록 배향되어 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.69-69
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• 2010

The research is the structural and optical characteristics of the Cadmium Sulfide(CdS) film, nanowires and nanobelts grown on the $Al_2O_3$ substrate using the vapor phase epitaxy method. The field-emission scanning electron microscopy(FE-SEM) were used to identify the shape of the surface of the nanostructures and x-ray diffraction(XRD) and transmission electron microscopy (TEM) were used to evaluate the structural characterisitcs. As a result, the XRD was confirmed the CdS peak and the substrate peak and TEM showed single crystals with wurtzite hexagonal structure on the nanostructures. As for the optical characteristic of the nanostructures, photoluminescence(PL) and micro-raman spectrum were measured. The PL measurements confirmed the emission peak related bound exciton to neutral donor($D^0X$) peak and free exciton(FX) peak. The micro-raman spectrum showed that the peak of the nanostructures were similar to the pure crystalline CdS peak and each peak were overtone of LO phonon of the hexagonal CdS of the longitudinal optical(LO) phonon mode. Therefore, it is confirmed that the CdS nanostructures grown in this research have superior crystallinity.

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.43-48
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• 2005

Metaloganic chemical vapor deposition, also known as metalorganic vapor phase epitaxy has become one of the main techniques for growing thin, high purity films for compound semiconductors such as GaAs, InP, and InGaAsP. In this study, the distribution of growth rate and composition of InGaAsP, InGaP, and InGaAs films are studied using computational method. The influences of process parameters such as pressure, temperature and precursors' partial pressure on the growth rate and composition distributions are analyzed. The film growth rate is increased in the upstream part according to the increase of temperature but not in the downstream part. The Ga composition in InGaAsP film shows an asymptotic behavior for temperature variation but As composition varies significantly within the temperature range considered in the present study. The overall film growth rates of InGaP, InGaAs and InGaAsP are decreased with increasing the Ga/In ratios of the source gases. Pressure variation does not seem to be a significant parameter to the film growth. Film growth characteristics of tertiary films such as InGaP and InGaAs show similar trends to the quaternary film, InGaAsP.

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.702-706
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• 2016

We demonstrated that self-separation FS-GaN (freestanding-GaN) was grown on MELO (maskless epitaxially lateral overgrowth) GaN template by horizontal HVPE (hydride vapor phase epitaxy). Before thick GaN grwoth, MELO GaN template was grown on patterned GaN template by MOCVD (metal organic chemical vapor deposition). The laterally overgrown GaN would consist of a continuous well coalesced layer. The mixed TDD (threading dislocation density) of seed and wing region were $8{\times}10^8cm^{-2}$ and $7{\times}10^7cm^{-2}$, respectively. After thick GaN grown by HVPE, the self-separation between thick GaN and sapphire substrate was generated at seed region. The regions of self-separation for FS-GaN and sapphire were observed by FE-SEM. Moreover, Raman results indicated that the compressive strain of seed and wing regions at FS-GaN substrate were slightly released compared to that of thick GaN grown on conventional GaN template. The optical properties of the FS-GaN substrate were examined by using PL (photoluminescence). The PL exhibited that donor bound exciton and donor acceptor pair were observed at low temperature. The effects on optical and structural properties of FS-GaN substrate have been discussed in detail.

• 한국결정성장학회지
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• 제25권4호
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• pp.127-134
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• 2015

AlN 단결정은 넓은 밴드갭(6.2 eV), 높은 열 전도도($285W/m{\cdot}K$), 높은 비저항(${\geq}10^{14}{\Omega}{\cdot}cm$), 그리고 높은 기계적 강도와 같은 장점들 때문에 차세대 반도체 적용을 위한 많은 흥미를 끈다. 벌크 AlN 단결정 또는 박막 템플릿(template)들은 주로 PVT(Physical vapor transport)법, 플럭스(flux)법, 용액 성장(solution growth)법, 그리고 증기 액상 증착(HVPE)법에 의해 성장된다. 단결정이 성장하는 동안에 발생하는 결함들 때문에 상업적으로 어려움을 갖게 된 이후로 결함들 분석을 통한 결정 품질 향상은 필수적이다. 격자결함 밀도(EPD)분석은 AlN 표면에 입자간 방위차와 결함이 존재하고 있는 것을 보여준다. 투과전자현미경(TEM)과 전자후방산란회절(EBSD)분석은 전체적인 결정 퀄리티와 다양한 결함의 종류들을 연구하는데 사용된다. 투과전자현미경(TEM)관찰로 AlN의 형태가 적층 결함, 전위, 이차상 등에 의해 크게 영향을 받는 것을 알 수 있었다. 또한 전자후방산란회절(EBSD)분석은 전위의 생성을 유도하는 성장 결함으로서 AlN의 zinc blende 폴리모프(polymorph)가 존재하고 있는 것을 나타내고 있었다.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.386-391
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• 2018

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.