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http://dx.doi.org/10.6111/JKCGCT.2015.25.4.127

Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD)  

Joo, Young Jun (Div. of Materials Engineering & Convergence Technology, Gyeongsang National Univ.)
Park, Cheong Ho (Div. of Materials Engineering & Convergence Technology, Gyeongsang National Univ.)
Jeong, Joo Jin (Dept. of Nano & Advanced Materials Engineering, Gyeongsang National Univ.)
Kang, Seung Min (Dept. of Advanced Science and Engineering, Hanseo, Univ.)
Ryu, Gil Yeol (Research Institute of Industrial Science and Technology, Analysis and Assessment Group)
Kang, Sung (Research Institute of Industrial Science and Technology, Analysis and Assessment Group)
Kim, Cheol Jin (Research Institute of Green Energy Convergence Technology, Gyeongsang National Univ.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.25, no.4, 2015 , pp. 127-134 More about this Journal
Abstract
Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.
Keywords
AlN; PVT; EPD; EBSD; TEM; Defect;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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