• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.96-102
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• 2020

In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy (MS-HVPE). AlN epilayer of 0.5 ㎛ thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayer grown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 10⁹ cm^-2 and edge dislocation density of 3.8 × 10⁹ cm^-2 was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices.

• Journal of the Korean Chemical Society
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• v.33 no.1
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• pp.135-142
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• 1989

Methyl tert-butyl ether(MTBE) was synthesized from vapor phase reaction of methanol with iso-butylene over HZSM-5 catalysts, and effects of SiO$_2/Al_2O_3$ ratio in the HZSM-5 catalysts and reaction conditions on products distribution have been examined. Acid strength and acid type of each catalyst with different SiO$_2/Al_2O_3$ ratio were measured using pyridine adsorption followed by temperature programmed desorption(TPD) and IR analysis. Reactants and products adsorption characteristics on different acid sites have also been examined. As the SiO$_2/Al_2O_3$ ratio of HZSM-5 catalyst was increased, selectivity to MTBE was improved as a result of decrease in dimethylether(DME) formation at the strong acid sites. Conversion and selectivity to MTBE were also greatly enhanced as $i-C_4H_8/CH_3OH$ reactant ratio was increased, and overall about 80$^{\circ}$C was adequate for the MTBE synthesis. The properties of deposited coke on spent catalysts were examined by TG, DTA and IR spectrum analysis, indicating the amount of the coke deposit in the order of HY > H-Mordenite > HZSM-5. Even if the coke deposited on H-Mordenite was little more in amount than to that on HZSM-5, the former deactivated quickly due to its non-interconnected channel structure. For HY, owing to its lange pore size, significant $i-C_4H_8$ polymerization was occured, and rapid deactivation and severe coke formation has resulted within few hours.

• Journal of the Korean GEO-environmental Society
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• v.9 no.2
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• pp.39-46
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• 2008

Due to the growth in industrialization, potential hazards in subsurface environments are becoming increasingly significant. The extraction of the contaminant from the soil and movement of the water are restricted due to the low permeability and adsorption characteristics of the reclaimed soils. There are a number of approaches to in-situ remediation that are used in contaminated sites for removing contaminants. These include soil flushing, dual phase extraction, and soil vapor extraction. Among these techniques, soil flushing was the focus of the investigation in this paper. Incorporated technique with PVDs has been used for dewatering from fine-grained soils for the purpose of ground improvement by means of prefabricated vertical drain systems. The laboratory model tests were performed by using the flushing tracer solutions for silty soils and recorded the tracer concentration changes with the elapsed time and flow rates. The modeling was intended to predict the effectiveness and time dependence of the remediation process. Modeling has been performed on the extraction, considering tracer concentration and laboratory model test characteristics. The computer model used herein are SEEP/W and CTRAN/W, this 2-D finite element program allows for modeling to determine hydraulic head and pore water pressure distribution, efficiency of remediation for the subsurface environment. It is concluded that the coefficient of permeability of contaminated soil is related with vertical velocity and extracted flow rate. The vertical velocity and extracted flow rate have an effect on dispersivity and finally are played an important role in-situ soil remediation.

• Journal of the Korean Institute of Gas
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• v.7 no.1 s.18
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• pp.19-23
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• 2003

The purpose of this thesis is to investigate the BLEVE probability of LP gas storage tanks which are relatively more dangerous, by the deductive calculating method using the results of Birk's pilot tank test and the required heat capacity of BLEVE. The result that BLEVEs can occur in only above 43.68 percent of liquid filling level under $600^{\circ}C$ of tank pate temperature and $53^{\circ}C$ of inner liquid temperature, was obtained and will be useful for preventing the BLEVE of LP gas storage tanks in fire sites. In addition, this research showed conditions of external leak and fire causing BLEVE, based on 15ton capacity of LP gas tank which has the same specifications as those in Puchon LP gas filling station accident. The result of the calculation is that the minimum pool fire conditions of BLEVE are above 7.2mm equivalent diameter under a liquid release condition and above 17.6mm equivalent diameter under a two-phase release condition. In the end, the result of calculating the pool size corresponding the above conditions using EFFECTS version 2.1, concludes that a minimum of 3.3 meters of diameter and 10.4 meters of height should be needed for BLEVE outbreak.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.2
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• pp.113-119
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• 2006

Brazing is an important manufacturing process in the fabrication of Heavy Water Reactor fuel rods, in which bearing and spacer pads are joined to Zircaloy-4 cladding tubes. The physical vapor deposition(PVD) technique is currently used to deposit metallic Be on the surfaces of pads as a filler metal. Amorphous Zr-Be binary alloys which are manufactured by rapid solidification process are under developing to substitute the conventional PVD-Be coating. In the present study, brazed joint with PVD and amorphous alloys of $Zr_{1-x}Be_{x}(0.3{\le}x{\le}0.5)$ as filler metals are compared by mechanism, microstructure and hardness. The thickness of brazed joint with amorphous alloys became much smaller than that of PVD-Be. The erosion of base metal did not occur in the brazed joint with amorphous alloys. The brazing mechanism for PVD-Be seems to be Be diffusion into Zr-4 with capillary action resulting from eutectic reaction while that for amorphous alloys are associated with the liquid phase formation in the brazed joint. The brazed joint microstructure with PVD-Be consists of dendrite while that with amorphous alloys is globular. The $Zr_{0.7}Be_{0.3}$ alloy shows the smooth interface with little erosion in the base metal and is recommended a most suitable brazing filler metal for Zircaloy-4.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.175-175
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• 2010

이전 연구에서는 사파이어 기판 위에 이종에피성장 방법으로 성장한 높은 인듐 조성의 극박 InGaN/GaN 다층 양자우물 구조를 이용한 근 자외선 (near-UV) 영역의 광원에 대하여 보고하였다. 본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 법을 이용하여 성장된 free-standing GaN 기판 위에 유기금속 화학증착법 (MOCVD) 을 이용하여 GaN 동종에피박막과 높은 인듐 조성의 InGaN/GaN 다층 양자우물을 성장하였고 그 특성을 분석하였다. Free-standing GaN 기판은 표면 조도가 0.2 nm 인 평탄한 표면을 가지며 $10^7/cm^2$ 이하의 낮은 관통전위밀도를 가진다. Freestanding GaN 기판 위에 성장 온도와 V/III 비율을 조절하여 GaN 동종에피박막을 성장하였다. 또한 100 nm 두께의 동종 GaN 박막을 성장한 후에 활성층으로 이용될 높은 인듐 조성의 InGaN/GaN 다층 양자우물구조를 성장하였다. Free-standing GaN 기판 위에 성장된 GaN 동종에피박막과 다층 양자우물구조의 표면 형상은 주사 탐침 현미경 (scanning probe microscopy, SPM) 을 이용하여 관찰하였고 photoluminescence (PL) 측정과 cathodoluminescence (CL) 측정을 통하여 광학적 특성을 확인하였다. 사파이어 기판 위에 성장된 2 um 의 GaN을 이용하여 성장된 높은 인듐 조성의 InGaN/GaN 다층 양자우물의 결함밀도는 $2.5 \times 10^9/cm^2$ 이지만 동일한 다층 양자우물구조가 free-standing GaN 기판 위에 성장되었을 경우 결함 밀도는 $2.5\;{\times}\;10^8/cm^2$로 감소하였다. Free-standing GaN 기판의 관통전위 밀도가 $10^7/cm^2$ 이하로 낮기 때문에 free-standing GaN 기판에 성장된 높은 인듐 조성의 다층 양자우물구조의 결함밀도가 GaN/sapphire 에 성장된 다층 양자우물의 결함밀도 보다 감소했음을 알 수 있다. Free-standing GaN 기판에 성장된 다층 양자 우물은 성장온도에 따라 380 nm 에서 420 nm 영역의 발광을 보이며 PL 강도도 GaN/sapphire 에 성장한 다층 양자우물의 PL 강도 보다 높은 것을 확인할 수 있다. 이것은 free-standing GaN 기판에 성장된 높은 인듐 조성의 InGaN/GaN 다층 양자우물구조의 낮은 결함밀도로 인하여 활성층의 발광 효율이 개선된 것임을 보여준다.

• Journal of the Korean Applied Science and Technology
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• v.34 no.4
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• pp.799-806
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• 2017

The potential use of modified clays in the adsorption of vapor phase benzene and toluene was investigated. The modified clays OC-CPC, IOC, and Al-PILC were prepared for comparative purposes and were characterized using infrared spectroscopy, thermogravimetric analysis, and X-ray diffraction. It was confirmed the intercalation of the aluminium pillar in IOC and Al-PILC, as well as the introduction of cetylpyridinium. The adsorption studies showed a great affinity of benzene and toluene for OC-CPC due to the hydrophobic character that resulted and also to the increase in the interlaminar distance. IOC showed a lower affinity for the benzene and toluene, followed by Al-PILC. Natual clay had no affinity for benzene and toluene due to its hydrophilic nature. Clay materials having a laminar structure can be chemically modified, changing their physiochemical characteristics, such as interlaminar distance, surface area, pore size, and chemical affinity. In this study, it was focused on obtaining modified clays to be used for the adsorption of volatile organic chemicals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.83-90
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• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.103-111
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• 2021

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCl_n, AlCl_n and SiCl_n gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.