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http://dx.doi.org/10.6111/JKCGCT.2020.30.3.096

Properties of AlN epilayer grown on 6H-SiC substrate by mixed-source HVPE method  

Park, Jung Hyun (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Kim, Kyoung Hwa (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Jeon, Injun (Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University)
Ahn, Hyung Soo (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Yang, Min (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Yi, Sam Nyung (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Cho, Chae Ryong (Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University)
Kim, Suck-Whan (Department of Physics, Andong National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.30, no.3, 2020 , pp. 96-102 More about this Journal
Abstract
In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy (MS-HVPE). AlN epilayer of 0.5 ㎛ thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayer grown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 109 cm-2 and edge dislocation density of 3.8 × 109 cm-2 was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices.
Keywords
6H-SiC; AlN epilayer; Mixed-source; HVPE method; Power semiconductor device;
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Times Cited By KSCI : 6  (Citation Analysis)
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