• Journal of Advanced Marine Engineering and Technology
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• v.32 no.4
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• pp.542-549
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• 2008

The evaporation heat transfer coefficient and pressure drop of R-22 and R-407C in a horizontal copper tube were investigated experimentally. The main components of the refrigerant loop are a receiver, a compressor, a mass flow meter, a condenser and a double pipe type evaporator (test section). The test section consists of a smooth copper tube of 6.4 mm inner diameter. The refrigerant mass fluxes were varied from 100 to $300\;kg/m^2s$ and the saturation temperature of evaporator were $5^{\circ}C$. The evaporation heat transfer coefficients of R-22 and R-407C increase with the increase of mass flux and vapor quality. The evaporation heat transfer coefficients of R-22 is about $5.68{\times}46.6%$ higher than that of R-407C. The evaporation pressure drop of R-22 and R-407C increase with the increase of mass flux. The pressure drop of R-22 is similar to that of R-407C. In comparison with test results and existing correlations, correlations failed to predict the evaporation heat transfer coefficient of R-22 and R-407C. therefore, it is necessary to develope reliable and accurate predictions determining the evaporation heat transfer coefficient of R-22 and R-407C in a horizontal tube.

• Proceedings of the SAREK Conference
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• 2007.11a
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• pp.247-251
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• 2007

Because of the ozone layer depletion and global warming, new alternative refrigerants are being developed. In this study, evaporation heat transfer characteristics of carbon dioxide flowing upward in a vertical micro-fin tube have been investigated by experiment. Before a test section, a pre-heater is installed to adjust the inlet quality of the refrigerant to a desired value. The micro-fin tube with outer diameter of 5 mm and length of 1.44 m was selected as the test section. The test was conducted at mass fluxes of 318 to $530\;kg/m^2s$, saturation temperature of -5 to $5^{\circ}C$, and heat fluxes of 15 to $30\;kW/m^2$. As the vapor quality increases, the heat transfer coefficients of carbon dioxide are increased, and the heat transfer coefficients increase when the heat fluxes and saturation temperatures increase, and there was not much of influence of mass flux on the heat transfer coefficients.

• International Journal of Air-Conditioning and Refrigeration
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• v.8 no.1
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• pp.14-28
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• 2000

The frequency response characteristics of a condenser were numerically studied for the control of refrigeration and air conditioning systems. The important parameters, such as the refrigerant flow rate, refrigerant temperature, air velocity, and air temperature at the condenser inlet, were analyzed. Superheated vapor, two phase, and subcooled liquid domain in condenser can be described by using the energy balance equation and the mass balance equation in refrigerant and tube wall, the basic equation for describing the dynamic characteristics of condenser can be derived. The transfer function for describing dynamic response of the condenser to disturbances can be obtained from using linearizations and Laplace transformations of the equation. From this transfer function, analytical investigation which affects the frequency responses of condenser has been made. Block diagrams were made based on the analytic transfer function; dynamic responses were evaluated in Bode diagrams on the frequency response. Through this study, it became possible that the information about the dynamic characteristics of air-cooled condenser is offered. The results may be used for determining the optimum design parameters in actual components and entire systems. Also, the mathematical models, frequency response may be used to help understanding, evaluate optimum design parameters, design control systems and determine on setting the best controller for the refrigeration and air-conditioning systems.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.12 no.6
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• pp.533-540
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• 2000

Condensation heat transfer characteristics have been investigated experimentally when a water vapor is condensed on the outside of a horizontal copper tube in a condenser. This problem is of particular interest in the design of a LiBr-water absorption system. Hydrophilic surface modification was performed to increase the wettability on the copper tube. The optimum hydrophilic treatment condition using acethylene and nitrogen as reaction gas is also studied in detail. The results obtained indicate that the optimum reaction gas ratio of acethylene to nitrogen for hydrophilic surface modification was found to be 7 : 3 for the best condensation heat transfer. In the wide ranges of coolant inlet temperatures, and coolant mass flow rates, both the condensation heat transfer rate and the condensation heat transfer coefficient of a hydrophilic copper tube are increased substantially, compared with those of a conventional copper tube used in a condenser. It is also found that the condensation heat transfer enhancement by the hydrophilic surface modification still emains even after a hundred cycles of wet/dry processes.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.15-20
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• 2014

The fracture analysis of $SiN_x$ layers, which were deposited by low-temperature plasma enhanced chemical vapor deposition (LT-PECVD) and could be used for an encapsulation layer of a flexible organic light emitting display (OLED), was performed by an electrical method. The specimens of metal-insulator-metal (MIM) structure were prepared using Pt and ITO electrodes. We stressed MIM specimen mechanically by bending outward with a bending radius of 15mm repeatedly and measured leakage current through the top and bottom electrodes. We also observed the cracks, were generated on surface, by using optical microscope. Once the cracks were initiated, the leakage current started to flow. As the amount of cracks increased, the leakage current was also increased. By correlating the electrical leakage current in the MIM specimen with the bending times, the amount of cracks in the encapsulation layer, generated during the bending process, was quantitatively estimated and fracture behavior of the encapsulation layer was also closely investigated.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.363-368
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• 2002

we proposed the use of $Si_2H_ 6/H_2$ chemistry for selective silicon epitaxy growth by low-pressure chemical vapor deposition(LPCVD) in the temperature range $600~710^{\circ}C$ under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on $SiO_2$ was found, and low temperature epitaxy selective deposition on Si was achieved without addition of HCI. Total gas flow rate and deposition pressure were 16.6sccm and 3.5mtorr, respectively. In this condition, we selectively obtained high-quality epitaxial Si layers of the 350~1050$\AA$ thickness. In older to extend the selectivity, we kept high pressure $H_2$ environment without $Si_2H_6$ gas for few minutes after first incubation period and then we conformed the existence of second incubation period.

• Transactions of the Korean hydrogen and new energy society
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• v.30 no.6
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• pp.585-592
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• 2019

In this study, a flashing boiling phenomenon of pressurized water jet was numerically studied and validated against an experimental data in the literatures. The volume of fluid (VOF) technique was used to consider two-phase behavior of water, while the homogeneous relaxation model (HRM) model was used to provide the velocity of phase change. During the flashing boiling through a nozzle, a mach disk was observed near nozzle exit because of pressure drop resulting from two-phase under-expansion. The flashing jet structure, local distributions of temperature/vapor volume fraction/velocity, and position of the mach disk were examined as nozzle inlet temperature changed.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.12-17
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• 2000

Helicon waves were excited by a Nagoya type III antenna in magnetized plasma, and hydrogen and methane are fed through a Mass Flow Controller(MFC). We made a diagnosis of properties of helicon plasma by H$_2$gaseous discharge, and fabricated the diamond thin film. The maximum measured electron density was 1${\times}$10$\^$10/ cm$\^$-3/. Diamond films have been growo on (100) silicon substrate using the helicon plasma chemical vapor deposition. Diamond films were deposited at a pressure of 0.1 Torr, deposition time of 40~80 h, a substrate temperature of 700$^{\circ}C$ and methane concentrations of 0.5~2.5%. The growth characteristics were investigated by means of X-ray Photoelectron (XPS) and X-ray Diffraction(XRD), XRD and XPS analysis revealed that SiC was formed, and finally diamond particles were definitely deposited on it. With increasing deposition time, the thickness and crystallization of the daimond thin film increased, For this system the optimum condition of methane concentration was estimated to near to 1.5%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.759-765
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• 2006

Temperature distribution of the circular heat source was studied by analyzing the heat transfer of the environment of the circular source for OLED. Circular nozzle source was used to fabricate thin organic layer as the organic material in it was heated, vaporized and deposited to the large size flat panel. Circular source for large size fat panel for OLED has been modified to obtain higher productivity and heat transfer characteristics was predicted using computer simulation. Fundamentals for OVPD process also was presented to estimate flow and heat transfer characteristics of the process which can increase the material efficiency.