• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.110-115
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• 2023

During the Hg₂Br₂ physical vapor transport process, with increasing the partial pressure of component B, P_B from 40 Torr to 200 Torr, a unicellular convective flow structures move from the crystal growth region to the center region in the vapor phase. The boundary layer flow is dominant for P_B = 40 Torr, and the core region flow is dominant for P_B = 200 Torr. The flow in the vapor phase shows a three-dimensional convective flow structure with a single cell (unicellular) for P_B = 40 Torr and 200 Torr, exhibits an asymmetrical flow with respect to the x, y central axis under the horizontally oriented configuration with an aspect ratio (length-to-width) of 3 and linear conducting walls. The critical temperature difference between the source and crystal region is about 30 K. The total molar flux of Hg₂Br₂ increases with the temperature difference until the total molar flux reaches the critical value. At the critical total molar flux, the total molar flux abruptly decreases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.6
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• pp.265-268
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• 2012

The growth of AlN single crystals of large size and good quality is of prime importance for UV LEDs and power devices applications. However, the crystals having the size of more than 1 inch and high quality have not been reported in the world. In the PVT growth of AlN, the crystal morphology of as grown were important because the preferred orientation of growth of it was evaluated for growth rate increase. In the present study, the AlN single crystals grown by PVT process were evaluated by the side of the growth morphology. Optical microscopic characterization was carried out to observe the shape of the crystals and the growth facets. Furthermore the growth habit of it were discussed by observation of the surface of AlN crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.215-221
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• 2002

Epitaxial Si layers were deposited on (100) Si substrates by hot-wall chemical vapor deposition (CVD) technique using the $SiH_2Cl_2/H_2$chemistry. Thermochemical calculations of the Si-H-Cl system were carried out to predict the window of actual Si deposition process and to investigate the effects of process variables (i.e., deposition temperature, reactor pressure, and input gas molar ratio ($H_2/SiH_2Cl_2$)) on the epitaxial growth. The calculated results were in good agreement with the experiment. Optimum process conditions were found to be the deposition temperature of 850~$950^{\circ}C$, the reactor pressure of 2~5 Torr, and the input gas molar ratio ($H_2/SiH_2Cl_2$) of 30~70, providing device-quality epitaxial layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.39-47
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• 2009

The effects of thermo-solutal convection on mercurous chloride system of ${Hg_2}{Cl_2}$, and Ne during physical vapor transport are numerically investigated for further understanding and insight into essence of transport phenomena, For $10\;K{\le}{\Delta}T{\le}30\;K$, the growth rate slowly increases and, then is decreased gradually until ${\Delta}T$=50 K, The occurrence of this critical point near at ${\Delta}T$=30 K is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. For the range of $10\;Torr{\le}P_B{\le}300\;Torr$, the rate is second order-exponentially decayed with partial pressures of component B, $P_B$. For the range of $5{\le}M_B{\le}200$, the rate is second order-exponentially decayed with a function of molecular weight of component B, $M_B$. Like the case of a partial pressure of component B, the effects of a molecular weight arc: reflected through the binary diffusivity coefficients, which are intimately related with suppressing the convection flow inside the growth enclosure, i,e., transition from convection to diffusion-dominant flow mode as the molecular weight of B increases. The convective mode is near at a ground level, i,e., on earth (1 $g_0$), and the convection is switched to the diffusion mode for $0.1\;g_0{\le}g{\le}10^{-2}g_0$, whereas the diffusion region ranges from $10^{-2}g_0$ up to $10^{-5}g_0$.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.523-525
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• 1996

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.1-20
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• 1998

Processing of thin films by chemical vapor deposition (CVD) is accompanied by chemical reactions, in which the rigorous kinetic analysis is difficult to achieve. In these conditions, thermodynamic calculation leads to better understanding of the CVD process and helps to optimise the experimental parameters to obtain a desired product. A CVD phase diagram has been used as guide lines for the process. By determining the effect of each process variable on the driving force for deposition, the thermodynamic limit for the substrate temperature that diamond can deposit is calculated in the C-H system by assuming that the limit is defined by the CVD diamond phase diagram. The addition of iso-supersaturation ratio lines to the CVD phase diagram in the Si-Cl-H system provides additional information about the effects of CVD process variables.

• Korean Chemical Engineering Research
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• v.57 no.2
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• pp.289-300
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• 2019

We have conducted a preliminary numerical analysis to understand the effects of double-diffusive convection on the molar flux at the crystal region during the growth of mercurous bromide ($Hg_2Br_2$) crystals in 1 g and microgravity (${\mu}g$) conditions. It was found that the total molar fluxes decay first-order exponentially with the aspect ratio (AR, transport length-to-width), $1{\leq}AR{\leq}10$. With increasing the aspect ratio of the horizontal enclosure from AR = 1 up to Ar = 10, the convection flow field shifts to the advective-diffusion mode and the flow structures become stable. Therefore, altering the aspect ratio of the enclosure allows one to control the effect of the double diffusive natural convection. Moreover, microgravity environments less than $10^{-2}g$ make the effect of double-diffusive natural convection much reduced so that the convection mode could be switched over the advective-diffusion mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.441-445
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• 1999

Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.