• Applied Chemistry for Engineering
• /
• v.20 no.6
• /
• pp.617-621
• /
• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

• Journal of the Korean institute of surface engineering
• /
• v.53 no.5
• /
• pp.241-248
• /
• 2020

The change of the deposition behavior of diamond through a pretreatment process of the base metal prior to diamond deposition using HFCVD was investigated. To improve the specific surface area of the base material, sanding was performed using sandblasting first, and chemical etching treatment was performed to further improve the uniform specific surface area. Chemical etching was performed by immersing the base material in HCl solutions with various etching time. Thereafter, seeding was performed by immersing the sanded and etched base material in a diamond seeding solution. Diamond deposition according to all pretreatment conditions was performed under the same conditions. Methane was used as the carbon source and hydrogen was used as the reaction gas. The most optimal conditions were found by analyzing the improvement of the specific surface area and uniformity, and the optimal diamond seeding solution concentration and immersion time were also obtained for the diamond particle seeding method. As a result, the sandblasted base material was immersed in 20% HCl for 60 minutes at 100 ℃ and chemically etched, and then immersed in a diamond seeding solution of 5 g/L and seeded using ultrasonic waves for 30 minutes. It was possible to obtain optimized economical diamond film growth rates.

• Composites Research
• /
• v.31 no.2
• /
• pp.43-50
• /
• 2018

The effects of deposition temperature on chemical vapor deposited silicon carbide (CVD-SiC) were studied to obtain high deposition rates and excellent bending strength characteristics. Silicon carbide prepared at $1250{\sim}1400^{\circ}C$ using methyltrichlorosilane(MTS : $CH_3SiCl_3$) by hot-wall CVD showed deposition rates of $95.7{\sim}117.2{\mu}m/hr$. The rate-limiting reaction showed the surface reaction at less than $1300^{\circ}C$, and the mass transfer dominant region at higher temperature. The activation energies calculated by Arrhenius plot were 11.26 kcal/mole and 4.47 kcal/mole, respectively. The surface morphology by the deposition temperature changed from $1250^{\circ}C$ pebble to $1300^{\circ}C$ facet structure and multi-facet structure at above $1350^{\circ}C$. The cross sectional microstructures were columnar at below $1300^{\circ}C$ and isometric at above $1350^{\circ}C$. The crystal phases were all identified as ${\beta}$-SiC, but (220) peak was observed from $1300^{\circ}C$ or higher at $1250^{\circ}C$ (111) and completely changed to (220) at $1400^{\circ}C$. The bending strength showed the maximum value at $1350^{\circ}C$ as densification increased at high temperatures and the microstructure changed from columnar to isometric. On the other hand, at $1400^{\circ}C$, the increasing of grain size and the direction of crystal growth were completely changed from (111) to (220), which is the closest packing face, so the bending strength value seems to have decreased.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.368-368
• /
• 2016

그래핀(Graphene)은 탄소 원자가 6각 구조로 이루진 2차원 알려진 물질 중 가장 얇은(0.34 nm) 두께의 물질이며 그 밴드구로조 인해 우수한 전자 이동도($200000cmV^{-1}s^{-1}$)를 가지고 있며, 이외에도 기계적, 화학적으로 뛰어난 특성을 가진다. 대면적화 된 그래핀을 성장시키기 위한 방법으로는 화학적 기상 증착법(Chemical Vapor Deposition)이 있다. 하지만 실제 여러 전이금속에서 합성되는 그래핀은 다결정으로, 서로 다른 면 방향을 가진 계면에서 전자의 산란이 일어나며, 고유의 우수한 특성이 저하되게 된다. 따라서 전자소재로 사용되기 위해서는 단결정의 대면적화 된 그래핀에 대한 연구가 지속적으로 이루어지고 있다. 앞서의 두 문제점 중, 단결정의 그래핀 합성에 크게 영향을 미치는 요인으로는 크게 합성 온도, 촉매 기판의 탄소 용해도, 촉매 표면에서의 탄소 원자의 확산성이 있다. 본 연구에서는 구리, 니켈, 실리콘에 비해 탄소 용해도가 낮으며, 탄소 원자의 높은 확산성으로 인해 단결정의 단층 그래핀을 합성에 적합하다고 보고된 저마늄(Germanium) 기판을 사용하여 그래핀을 합성하였다. 단결정의 그래핀을 성장시키기 위해 메탄(Methane; $CH_4$)가스의 주입량과 수소 가스의 주입량을 제어하여 성장 속도를 조절 하였으며, 성장하는 그래핀의 면방향을 제어하고자 하였다. 표면의 산화층(Oxidized layer)을 제거하기 위하여 불산(Hydrofluoric acid)를 사용하였다. 불산 처리 후 표면의 변화는 원자간력현미경(Atomic force microscopipe)을 통하여 분석하였다. 합성된 그래핀의 특성을 저 에너지 전자현미경(Low energy electron microscopy), 광전자 현미경(Photo emission electron microscopy), 라만 분광법(Raman spectroscopy), 원자간력현미경(Atomic force microscopy)와 투과전자현미경 (transmission electron microscopy)을 이용하여 기판 표면의 구조와 결정성을 분석하였다.

• Current Photovoltaic Research
• /
• v.2 no.3
• /
• pp.103-109
• /
• 2014

Highly efficient hydrogenated nanocrystalline silicon (nc-Si:H) thin-film solar cells were prepared on flexible stainless steel substrates using plasma-enhanced chemical vapor deposition. To enhance the performance of solar cells, material properties of back reflectors, n-doped seed layers and wide bandgap nc-SiC:H window layers were optimized. The light scattering efficiency of Ag back reflectors was improved by increasing the surface roughness of the films deposited at elevated substrate temperatures. Using the n-doped seed layers with high crystallinity, the initial crystal growth of intrinsic nc-Si:H absorber layers was improved, resulting in the elimination of the defect-dense amorphous regions at the n/i interfaces. The nc-SiC:H window layers with high bandgap over 2.2 eV were deposited under high hydrogen dilution conditions. The vertical current flow of the films was enhanced by the formation of Si nanocrystallites in the amorphous SiC:H matrix. Under optimized conditions, a high conversion efficiency of 9.13% ($V_{oc}=0.52$, $J_{sc}=25.45mA/cm^2$, FF = 0.69) was achieved for the flexible nc-Si:H thin-film solar cells.

• Korean Journal of Crystallography
• /
• v.9 no.1
• /
• pp.53-63
• /
• 1998

The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.11a
• /
• pp.68-68
• /
• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Journal of the Korean Electrochemical Society
• /
• v.12 no.2
• /
• pp.189-195
• /
• 2009

$\beta-Ga_{2}O_{3}$ nanorods were synthesized by chemical vapor deposition method using nickel-oxide nanoparticle as a catalyst and gallium metal powder as a source material. The average diameter of nanorods was around 160 nm and the average length was $4{\mu}m$. Also, we confirmed that the synthesis of nanorods follows the vapor-solid growth mechanism. From the results of X-ray diffraction and HR-TEM observation, it can be found that the synthesized nanorods consisted of a typical core-shell structure with single-crystalline $\beta-Ga_{2}O_{3}$ core with a monoclinic crystal structure and an outer amorphous gallium oxide layer. Li/$\beta-Ga_{2}O_{3}$ nanorods cell delivered capacity of 867 mAh/g-$\beta-Ga_{2}O_{3}$ at first discharge. Although the Li/$\beta-Ga_{2}O_{3}$ nanorods cell showed low coulombic efficiency at first cycle, the cell exhibited stable cycle life property after fifth cycle.

• Composites Research
• /
• v.29 no.4
• /
• pp.194-202
• /
• 2016

A graphene film, two-dimensional carbon sheet, is a promising material for future electronic devices and so on. In graphene applications, the effect of substrate on the atomic/electronic structures of graphene is significant, so we studied an interaction between graphene film and substrate. To study the effect, we investigated the graphene films grown on Ni substrate with two crystal face of (111) and (100) by Raman spectroscopy, comparing with graphene films transferred on $SiO_2/Si$ substrate. In our study, the doping effect caused by charge transfer from Ni or $SiO_2/Si$ substrate to graphene was not observed. The bonding force between graphene and Ni substrate is stronger than that between graphene and $SiO_2/Si$. The graphene films grown on Ni substrate showed compressive strain and the growth of graphene films is incommensurate with Ni (100) lattice. The position of 2D band of graphene synthesized on Ni (111) and (100) substrate was different, and this result will be studied in the near future.

• The Journal of the Petrological Society of Korea
• /
• v.8 no.2
• /
• pp.92-105
• /
• 1999

The Cretaceous Chaeyaksan basaltic rocks consist mainly of basaltic tuffs intercalating three layers of basalt. Stratigraphically, the rocks are located between the upper Songnaedong Formation and the lower Geoncheonri Formation and contain plagioclase, augite, hornblende, and a few olivine phenocrysts. Geochemically, they show calc-alkaline characteristics in some immobile element content, but show the alkaline suite feature in the mobile major element composition. The basalts are widely spilitized but some of them is altered to shoshonitic rocks with more calcic plagioclase, calcite, and chlorite, and adularia veinlets are common in the rocks. It is supposed that the post-eruption alteration of the rocks is done through alkali-replacement by hydrothermal solution or vapor rather than by low grade regional metamorphism. It is considered that A1 in hornblende will be available for estimating the pressure of the pre-eruption magma in the reservoir although the plagioclase of the rocks are highly albitized. The crystallization pressure was calculated as 5.7Kb by the equation of Johnson and Rutherford(l989) incorporating of the effect of overestimate of .41T in hornblende in the case of quartz-free rocks. Application of the estimated temperature, pressure and the constituent of phenocrysts of the rocks to the experimental P-T phase diagram for basalts established by Green(1982) indicates the crystallization course and succession of growth of the phenocrysts during of rising and cooling of the magma reservoir; augite + augite and olivine + augite, olivine, and hornblende -+ augite and hornblende+ augite, hornblende, and plagioclase. Such evolution course of the magma may include crystal fractionation by the phenocrysts crystallization and contamination by country rock in lower crust.