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http://dx.doi.org/10.7234/composres.2016.29.4.194

Raman Spectroscopy Analysis of Graphene Films Grown on Ni (111) and (100) Surface  

Jung, Daesung (Department of Energy Science, Sungkyunkwan University)
Jeon, Cheolho (Advanced Nano-surface Group, Korea Basic Science Institute)
Song, Wooseok (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology)
An, Ki-Seok (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology)
Park, Chong-Yun (Department of Physics, Sungkyunkwan University)
Publication Information
Composites Research / v.29, no.4, 2016 , pp. 194-202 More about this Journal
Abstract
A graphene film, two-dimensional carbon sheet, is a promising material for future electronic devices and so on. In graphene applications, the effect of substrate on the atomic/electronic structures of graphene is significant, so we studied an interaction between graphene film and substrate. To study the effect, we investigated the graphene films grown on Ni substrate with two crystal face of (111) and (100) by Raman spectroscopy, comparing with graphene films transferred on $SiO_2/Si$ substrate. In our study, the doping effect caused by charge transfer from Ni or $SiO_2/Si$ substrate to graphene was not observed. The bonding force between graphene and Ni substrate is stronger than that between graphene and $SiO_2/Si$. The graphene films grown on Ni substrate showed compressive strain and the growth of graphene films is incommensurate with Ni (100) lattice. The position of 2D band of graphene synthesized on Ni (111) and (100) substrate was different, and this result will be studied in the near future.
Keywords
Graphene; Interaction; Ni crystal face; Raman spectroscopy; Chemical vapor deposition;
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