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http://dx.doi.org/10.7234/composres.2018.31.2.043

Effect of Temperature on the Deposition Rate and Bending Strength Characteristics of Chemical Vapor Deposited Silicon Carbide Using Methyltrichlorosilane  

Song, Jun-Baek (Department of Advanced Materials Engineering, Korea Polytechnic University)
Im, Hangjoon (Department of Advanced Materials Engineering, Korea Polytechnic University)
Kim, Young-Ju (R&D Center, DS Techno Co., Ltd.)
Jung, Youn-Woong (R&D Center, DS Techno Co., Ltd.)
Ryu, Hee-Beom (R&D Center, DS Techno Co., Ltd.)
Lee, Ju-Ho (R&D Center, DS Techno Co., Ltd.)
Publication Information
Composites Research / v.31, no.2, 2018 , pp. 43-50 More about this Journal
Abstract
The effects of deposition temperature on chemical vapor deposited silicon carbide (CVD-SiC) were studied to obtain high deposition rates and excellent bending strength characteristics. Silicon carbide prepared at $1250{\sim}1400^{\circ}C$ using methyltrichlorosilane(MTS : $CH_3SiCl_3$) by hot-wall CVD showed deposition rates of $95.7{\sim}117.2{\mu}m/hr$. The rate-limiting reaction showed the surface reaction at less than $1300^{\circ}C$, and the mass transfer dominant region at higher temperature. The activation energies calculated by Arrhenius plot were 11.26 kcal/mole and 4.47 kcal/mole, respectively. The surface morphology by the deposition temperature changed from $1250^{\circ}C$ pebble to $1300^{\circ}C$ facet structure and multi-facet structure at above $1350^{\circ}C$. The cross sectional microstructures were columnar at below $1300^{\circ}C$ and isometric at above $1350^{\circ}C$. The crystal phases were all identified as ${\beta}$-SiC, but (220) peak was observed from $1300^{\circ}C$ or higher at $1250^{\circ}C$ (111) and completely changed to (220) at $1400^{\circ}C$. The bending strength showed the maximum value at $1350^{\circ}C$ as densification increased at high temperatures and the microstructure changed from columnar to isometric. On the other hand, at $1400^{\circ}C$, the increasing of grain size and the direction of crystal growth were completely changed from (111) to (220), which is the closest packing face, so the bending strength value seems to have decreased.
Keywords
Chemical Vapor Deposition; Silicon Carbide; Deposition Temperature; Rate-limiting Reaction; Deposition Rate; Bending Strength;
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Times Cited By KSCI : 2  (Citation Analysis)
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