• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.296-301
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under the thermal chemical vapor deposition system. A 304-type stainless steel was used as a substrate with nickel powders as the catalyst. The surface of the substrate was pretreated using a sand paper or a mechanical drill to enhance the production yield of the carbon coils. The characteristics of the deposited carbon nanomaterials on the substrates were investigated according to the surface state on the stainless steel substrate. The protrusion induced by the grooves on the substrate surface could enhance the formation of the carbon nanomaterials having the coils geometries. The cause for the enhancement of the carbon coils formation by the grooves was suggested and discussed with the surface energies for the interaction between as-growing carbon elements. Finally, we could obtain the massive production yield of the carbon coils by the surface pretreatment using SiC sand papers on the several tens grooved stainless steel substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.14-19
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• 1999

Using a single precursor of hexamethyldisilane $(Si_{2}(CH_{3})_{6})$, $\beta$-SiC film was successfully deposited on a Si substrate at $1100^{\circ}C$ by a chemical vapor deposition method. Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/$H_{2}$ gas system during the deposition. The schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.80-83
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• 1999

Processing of thin films by chemical vapor deposition(CVD) is accompanied by chemical reactions, in which the rigorous kinetic analysis is difficult to achieve. In these conditions, thermodynamic calculation leads to better understanding of the CVD process and helps to optimise the experimental parameters to obtain a desired product. A CVD phase diagram has been used as guide lines for the process. By determining the effect of each process variable on the driving force for deposition, the thermodynamic limit of the substrate temperature for a diamond deposition is calculated in the C-H system by assuming that the limit is defined by the CVD diamond phase diagram. The addition of iso-supersaturation ratio lines to the CVD phase diagram in the Si-Cl-H system provides additional information about the effects of CVD porcess variables.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.36-40
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• 2003

The diamond-like nanocomposite (DLN) thin films were deposited on Si substrates using $CH_4/(C_2H_5O)_4Si/H_2$/Ar gas mixtures as source gases by the plasma enhanced chemical vapor deposition (PECVD). The chemical structure and microstructure of grown films were investigated and their tribological properties were evaluated by a ball-on-plate type tribometer. The deposited DLN films mainly consisted of diamond-like a-C:H and quartz-like a-Si:O networks. The DLN films had a good agreement with tribological coating applications due to their extremely low friction coefficients and low wear rates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.117-122
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• 2020

In last few decades, although thermal and/or solutal buoyancy-driven recirculating flows in a closed ampoule have been intensively studies as a model problem, there exist interesting total molar flux of Hg₂Br₂ that have been unreported in the literature. It is concluded that the total molar flux of Hg₂Br₂(A) increases linearly and directly as the temperature difference regions in the range of 10℃ ≤ ΔT ≤ 50°, 3.5 × 10³ ≤ Gr_t ≤ 4.08 × 10³, 4.94 × 10⁴ ≤ Gr_s ≤ 6.87 × 10⁴. For the range of 10 Torr ≤ P_B ≤ 150 Torr, the total molar flux of Hg₂Br₂(A) decays second order exponentially as the partial pressure of component B (argon as an impurity), P_B increases. From the view point of energy transport, the fewer the partial pressure of component B (argon), P_B is, the more the energy transport is achieved.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.301-313
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• 1996

The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.153-157
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• 2011

We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD), The Si(100) substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition, The ICP treatment led to the enhancement in the coalescence of Ge islands, The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.2
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• pp.58-61
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• 2016

Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from $500{\sim}600^{\circ}C$ and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured $1{\times}10^5/cm^2$ by the cathodoluminescence measurement. The full-width at half-maximum of the X-ray diffraction rocking curve for (002) reflection was approximately 270 arcsec for Ga face and 80 arcsec for N face.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.198-202
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• 2006

We could achieve the bridge-type formation of the iridium-catalyzed carbon nanofibers across the gap on the MgO substrate using microwave plasma enhanced chemical vapor deposition method. On the plane surface area of the MgO substrate, the iridium-catalyzed carbon nanofibers were grown as a lateral direction to the substrate. The bridge-type formation and/or the lateral growth of the iridium-catalyzed carbon nanofibers were interconnected with each other. Finally, they could form an entangled network having the bridge-type formation of the carbon nanofibers across the gap on the substrate and the laterally-grown carbon nanofibers on the plane surface area of the substrate. The entangled network showed the semiconductor electrical characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.279-282
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• 2013

Recently, it has been interested much that AlN (Aluminum Nitride) crystals can be applied to UV LEDs and high power devices as like GaN and SiC crystals. The reports about commercial grade of AlN wafers in the world have been absent, however several results for growth of large size of AlN single crystals have been reported from abroad. In this report, the result of AlN single crystals of a diameter of about 8 mm grown are reported. Optical microscopic characterization was applied to observe the form of the crystals and the crystal quality was evaluated by FWHM measurement by DCXRD rocking curve analysis.