• 설비공학논문집
• /
• 제5권3호
• /
• pp.217-225
• /
• 1993

Nonflammable mixtures of flammable and nonflammable refrigerants are possible as substitute refrigerants for use in domestic heat pumps and refrigerators. Refrigerant leakage from such a system is of paramount concern since it is possible that the resulting mixture composition remaining in system will reside in the flammable range. This paper presents a simulation of a leakage process of refrigerant mixtures. Idealized cases of isothermal leakage process are considered in this study representing a slow leak. Simulation is performed for selected composition of binary and ternary refrigerant mixture; R-32/134a and R-32/125/134a. Mixture compositions with respect to percentage leak of original charge are presented. In isothermal leakage process, both vapor and liquid compositions of more volatile refrigerant decrease during vapor and liquid leak, but the total composition of this component decreases during vapor leak and increases during liquid leak. Vapor and liquid compositions are determined depending on the vapor-liquid equilibrium relation of the refrigerant mixture. The refrigerant mixture left in the system can go to a nonflammable direction relying on which component in the mixture is flammable.

• 대한설비공학회:학술대회논문집
• /
• 대한설비공학회 2008년도 동계학술발표대회 논문집
• /
• pp.157-164
• /
• 2008

The temperature-entropy diagram of water or vapor displays graphically the thermophysical properties, so it is very conveniently used in various thermal systems. On general T-s chart of water, there are temperature, pressure, quality, specific volume, specific enthalpy, specific entropy. However, various state and process values besides above properties can be plotted on T-s diagram. In this study, we developed the software drawing twenty six kinds of properties, that is temperature, pressure, quality, specific volume, specific internal energy, specific enthalpy, specific entropy, specific exergy, exergy ratio, density, isobaric specific heat, isochoric specific heat, ratio of specific heat, coefficient of viscosity, kinematic coefficient of viscosity, thermal conductivity, prandtl number, ion product, static dielectric constant, isentropic exponent, velocity of sound, joule-thomson coefficient, pressure coefficient, volumetric coefficient of expansion, isentropic compressibility, and isothermal compressibility. Also, this software can analyze and print the system values of mass flow rate, volume flow rate, internal energy flow rate, enthalpy flow rate, entropy flow rate, exergy flow rate, heat flow rate, power output, power efficiency, and reversible work. Additionally, this software support the functions such as MS-Power Point.

• Carbon letters
• /
• 제18권
• /
• pp.37-42
• /
• 2016

Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method at different growth temperatures (1000℃, 1100℃, and 1200℃). The properties of graphene were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Raman spectroscopy. The results showed that the quality of the deposited graphene layer was affected by the growth temperature. XRD results showed the presence of a carbide phase on the Mo surface; the presence of carbide was more intense at 1200℃. Additionally, a higher I_2D/I_G ratio (0.418) was observed at 1200℃, which implies that there are fewer graphene layers at this temperature. The lowest I_D/I_G ratio (0.908) for the graphene layers was obtained at 1200℃, suggesting that graphene had fewer defects at this temperature. The size of the graphene domains was also calculated. We found that by increasing the growth temperature, the graphene domain size also increased.

• 한국재료학회지
• /
• 제29권5호
• /
• pp.304-310
• /
• 2019

Chemical vapor deposition method using $CH_4$ gaseous hydrocarbons is generally used to synthesize large-area graphene. Studies using non-gaseous materials such as ethanol, hexane and camphor have occasionally been conducted. In this study, large-area graphene is synthesized via chemical vapor deposition using polyethylene as a carbon precursor. In particular, we used a poly glove, which is made of low-density polyethylene. The characteristics of the synthesized graphene as functions of the growth time of graphene and the temperature for vaporizing polyethylene are evaluated by optical microscopy and Raman spectroscopy. When the polyethylene vaporizing temperature is over $150^{\circ}C$, large-area graphene with excellent quality is synthesized. Raman spectroscopy shows that the D peak intensity increased and the 2D peak intensity decreased with increasing growth time. The reason for this is that sp3 bonds in the graphene can form when the correct amount of carbon source is supplied. The quality of the graphene synthesized using polyethylene is similar to that of graphene synthesized using methane gas.

• 한국지구과학회지
• /
• 제43권2호
• /
• pp.239-252
• /
• 2022

국내에서 처음으로 도입한 기상 항공기에 탑재한 G-band 수증기 라디오미터(GVR) 관측으로 산출된 가강수량의 품질 관리 방법을 제안하였다. GVR 빔의 연직 최단 경로 자료만 사용하기 위해 기상 항공기의 자세 정보(pitch와 roll 각도)를 활용하였고, GVR 가강수량이 20 mm 이상의 자료를 제거하는 방법을 품질 관리에 적용하였다. GVR 가강수량이 20 mm 이상으로 증가할 때, 웜로드(Warm load) 평균 전력과 스카이로드(Sky load) 평균 전력의 차이가 0에 가까이 수렴하는 특성을 확인하였고, 이는 COMS (Communication, Ocean and Meteorological Satellite)의 운형, 운정고도, 운량자료와 구름통합관측기기(CCP), 강수입자 측정기(PIP)로 측정된 강수 및 구름 입자 크기로 확인한 하층운과 중층운에 의한 높은 밝기온도 때문으로 판단된다. 구름 많은 날의 품질 관리 적용 전후의 GVR 가강수량을 LDAPS (Local Data Assimilation and Prediction System) 가강수량과 정량적으로 비교하였는데 RMSD (Root Mean Square Difference)는 2.9 mm에서 1.8 mm로 감소하였고, KLAPS (Korea Local Analysis and Prediction System)와의 RMSD는 5.4 mm에서 4.3 mm로 감소하여 향상된 정확도를 보였다. 또한 품질 관리를 적용한 GVR 가강수량과 드롭존데 가강수량 관측 자료을 활용하여 COMS 가강수량과도 정량적으로 비교평가함으로써 본 연구에서 제안한 GVR 가강수량의 품질 관리 방법의 유효성을 확인하였다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2012년도 춘계학술발표대회
• /
• pp.90.2-90.2
• /
• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

• 한국세라믹학회지
• /
• 제44권3호
• /
• pp.142-146
• /
• 2007

High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{\sim}900^{\circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.

• Transactions on Electrical and Electronic Materials
• /
• 제9권1호
• /
• pp.24-27
• /
• 2008

ZnO has intensively attracted interest for the next generation of short wavelength LEDs and semiconductor lasers. However, for the development and application of the devices based on this material, the fabrication of p-type ZnO thin films is pivotal. Generally, the process of preparation of ZnO is unavoidably accompanied by the natural donor ions such as interstitial Zn ions and oxygen vacancy ions that show n-type electrical property and make fabrication of p-type ZnO to be a hard problem. On this study, to realize stable high-quality p-type ZnO thin films, the undoped ZnO thin films were diffused with P in vapor state. The ZnO:P thin films showed high-quality p-type properties electrically and optically.

• Applied Science and Convergence Technology
• /
• 제27권5호
• /
• pp.79-85
• /
• 2018

Many studies have been conducted on large-scale graphene synthesis by chemical vapor deposition. Furthermore, numerous researchers have attempted to develop processes that can continuously fabricate uniform and high-quality graphene. To compete with other types of carbon materials (carbon black, carbon fiber, carbon nanotubes, and so on), various factors, such as price, mass manufacturing capability, and quality, are crucial. Thus, in this study, we examine various large-scale graphene production methods focusing on cost competitiveness and productivity improvements for applications in various fields.

• 열처리공학회지
• /
• 제28권1호
• /
• pp.7-16
• /
• 2015

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.