• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.432-438
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• 2004

In this study, we investigated the WVTRs Properties of inorganic thin composite films(ITCFs) to be newly adopted as the passivation layer of the OLED to replace the inorganic compound material Because we thought that inorganic compound materials were limited to enhance the barrier property of thin film. So, ITCFs were fabricated by mixing the cooperated material with the base material. And then, ITCFs were deposited onto the plastic substrate using the electron beam evaporation system and the water vapor transmission rates(WVTRs) were measured using the Mocon equipment. As a result of the WVTR measurement, we could analyze the WVTR values for various ITCFs. ITCFs had a remarkably lower value than the inorganic compound film. Through the analysis of thin film, we can understand the crystal structure and mixed amount. Therefore, ITCFs can be used as the inorganic passivation layers of OLED with the inorganic compound film.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.207-212
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• 1999

Undoped InP epilayers with high purity were grown by using $In/PCl_3/H_2$ chloride vapor phase epitaxy. It was found that the growth of InP homoepitaxial layer is optimized at the growth temperature of $630^{\circ}C$ and at the $PCl_3$ molar fraction of $1.2\times10^{-2}$. The carrier concentration of InP epilayer was less than $10^{14} {cm}^{-3}$ from the low temperature (11K) photoluminescence measurement. Growth behavior of undoped InP current blocking layer on reactive ion-etched (RIE) mesas has been investigated for the realization of 1.55 $\mu \textrm m$buried-heterostructure laser diode (BH LD), using chloride vapor phase epitaxy. On the base of InP homoepitaxy, InP current blocking layers were grown at the growth temperatures ranging from $620^{\circ}C$ to $640^{\circ}C$. Almost planar grown surfaces without edge overgrowth were achieved as the growth temperature increased. It implied that higher temperature enhanced the surface diffusion of the growth species on the {111} B planes and suppressed edge overgrowth.

• Journal of Information Display
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• v.10 no.4
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• pp.137-142
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• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.137-144
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• 2021

In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se₂ (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe₂ and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of J_SC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of V_OC, J_SC, and FF could be greatly improved.

• Journal of Electrical Engineering and Technology
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• v.6 no.5
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• pp.688-692
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• 2011

Carbon nanotubes (CNTs) are vertically grown inside high-aspect-ratio vertical pores of anodized aluminum oxide. A CNT catalyst layer is introduced by atomic layer deposition to the bottom of the pores, after which the CNTs are successfully grown from the layer using chemical vapor deposition. The CNTs formed a complete vertical conductive path. The conductivity of the CNT-vertical path is also measured and discussed. The present atomic layer deposition-incorporated catalyst deposition is predicted to enable the integration of CNTs with various challenging configurations, including high-aspect-ratio vertical channels or vertical interconnects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Journal of the Korean Home Economics Association
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• v.26 no.4
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• pp.1-13
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• 1988

The purpose of this study is to investigate water and after vapor transport characteristics of underwear fabrics. Experimental materials were cotton woven fabric and cotton knitted fabric, nylon tricot (untreated and hydrophilic finished) and cotton/polyester/cotton triple layer. Cotton knitted fabric have three types of knit structure (interlock, rib, plain stitch) and knit with either 38's or 60's combed yarn. And cotton woven fabric have plain weave with 60's combed yarn. As experimental methods, vapor cup test, dynamic method, vertical wicking test and transplanar uptake test were used. The results are as follows. 1) In cotton specimens, the order of water vapor transpiration (wvt) was plain > rib > interlock in the same yarn diameter. The knit fabric of thinner yarn showed the better wvt among the same knit structure. 2) In cotton specimens, the order of water absorbency was interlock > rib > plain in the same yarn diameter. the knit fabric of thicker yarn showed the better absorbency among the same knit structure. 3) When knit fabric (60's plain) is compared with woven fabric 960's plain), knit fabric showed faster rate of wvt, more amount of uptake and slower rate of water uptake than woven fabric did. 4) When compared untreated nylon with hydrophilic finished nylon, hydrophilic finished nylon showed much more water absorbency than untreated nylon did, but showed same rate of wvt. 5) The water transport characteristics of triple layer underwear fabric showed that the thinner and the lighter one, the better wvt and absorbency did.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.2
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• pp.51-56
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• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

• Journal of the Korean Wood Science and Technology
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• v.52 no.4
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• pp.301-318
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• 2024

Contrary to other materials like metals, glass, etc., wood continuously interacts with the environment, increasing and decreasing its moisture content according to the humidity of the air and changing its dimensions by swelling or shrinking. Water diffusion through laminated solid wood is crucial in wood bonding processes. The adhesive layer might block the diffusion if the water vapor diffusion is perpendicular to the bond line. As a result of this blockage, different proportions of deformation appear on the two sides of the bond line, which causes stresses in the bonded assembly. The question arises of how long the bonded structure will keep its integrity due to moisture diffusion blockage, inevitable tensions appearing in the glue line, and how these stresses could be avoided. With cross laminated timber (CLT) solid wood panel production, this question gains new importance. Despite the relevance, only a limited number of publications are available. Comprehensive research would also be necessary considering both the molecular structure and diffusion properties of the adhesive adjusted to the wood species (covering possible substituting wood species, too). Overall, this review serves as a resource for enhancing our understanding of water vapor diffusion through wood adhesive layers and provides insights that have implications for reducing stresses in bonded wood assemblies and the performance of the bonded group over time. Furthermore, identifying knowledge gaps is necessary to establish the basis for investigating the diffusion property of CLT panels.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.257-264
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• 1994

The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.