Browse > Article
http://dx.doi.org/10.21218/CPR.2021.9.4.137

The Fabrication of the Cu(In,Ga)Se2 Absorber Layer Using Binary Precursor Films Deposited by Chemical Vapor Deposition  

Lee, Gyeong A (Department of Chemical engineering, Yeungnam University)
Kim, A Hyun (Department of Chemical engineering, Yeungnam University)
Cho, Sung Wook (Department of Chemical engineering, Yeungnam University)
Lee, Kang-Yong (Department of Chemical engineering, Yeungnam University)
Jeon, Chan-Wook (Department of Chemical engineering, Yeungnam University)
Publication Information
Current Photovoltaic Research / v.9, no.4, 2021 , pp. 137-144 More about this Journal
Abstract
In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se2 (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe2 and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of JSC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of VOC, JSC, and FF could be greatly improved.
Keywords
Solar cells; Selenization; Chemical Vapor Deposition; Rapid Thermal Process;
Citations & Related Records
연도 인용수 순위
  • Reference
1 John E. Crowell, "Chemical methods of thin film deposition: Chemical vapor deposition, atomic layerdeposition, and related technologies," Journal of Vacuum Science & Technology A, 21, S88-S95 (2003).   DOI
2 Torben Klinkert, "Comprehension and optimisation of the co-evaporation deposition of Cu(In,Ga)Se2 absorber layers for very high efficiency thin film solar cells," Chemical Physics [physics.chem-ph]. Universite Pierre et Marie Curie - Paris VI (2015).
3 Zhang, L., Yu, Y., Yu, J., Wei, Y., "Effects of annealing atmosphere on theperformance of Cu(InGa)Se2 films sputtered from quaternary targets," R. Soc. Open Sci, 7 (2020).
4 Takuya Kato, Kimihiko Kitani, Kong Fai Tai, Rui Kamada, "Characterization of the Back Contact of CIGS Solar Cell as the Origin of "Rollover" Effect," 32nd European Photovoltaic Solar Energy Conference At: Munich, Germany Volume, 1058-1088 (2016).
5 T. Yamaguchi, K. Tsujita, S. Niiyama, T. Imanishi, "Preparation of High Ga Content Cu(In,Ga)Se2 Thin Films by Sequential Evaporation Process Added In2S3," J. of AMPC, 2, 106-109 (2012).   DOI
6 Jung, S. H., Yun, J. H., Ahn, S. J., Yoon, K. H., Kim, D. H., "Effects of Ga contents on the performance of CIGS thin film solar cells fabricated by co-evaporation technique," Current Applied Physics, 10(4), 990-996 (2010).   DOI
7 O. Lundberg, M. Edoff, L. Stolt, "The effect of Ga-grading in CIGS thin film solar cells," Thin Solid Films, 480-481, 520-525 (2005).   DOI
8 A. Romeo, M. Terheggen, D. Abou-Ras,D. L. Batzner, F.-J. Haug, M. Kalin, D.Rudmann, A. N. Tiwari, "Development of Thin-film Cu(In,Ga)Se2 and CdTe Solar Cells," Prog. Photovolt., 12, 93-111 (2004).   DOI