• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1251-1254
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• 2008

ZnO:Zn films have been deposited on the glass substrates using thermal vapor deposition method. Different morphologies such as ZnO slice, pillar and nanorod have been derived. The relationship between photoluminescence and morphology has been studied. Photocatalytic activity has been performed to validate that defects play an important role in the photoluminescence process.

• 한국결정성장학회지
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• 제22권5호
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• pp.213-217
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• 2012

Carbon coils could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and $H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ additive in cyclic modulation manner, the dominant formation of the nanosized carbon coils could be achieved with maintaining the minimized sulfur additive amount. The geometry variation of the as-grown carbon coils, such as linear type, microsized coil type, wavelike nanosized coil type, and nanosized coil type, were investigated according to the different cyclic modulation manner of $SF_6$ flow. $SF_6$ gas incorporation develops the coil-type geometry. Furthermore, the higher flow rate of $SF_6$ gas increased the amount of the nanosized carbon coils. The slightly increased etching ability by $SF_6$ addition seems to be the cause for these results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.590-590
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• 2013

Direct growth of graphene using CVD method has been done on CVD grown boron nitride substrate. From the SEM image, we have shown that the size of grain of graphene could be clearly controlled by varying the amount of injected hydrocarbon. To convince the existence of graphene on boron nitride, XPS and Raman has been checked. Both B1s and N1s peaks in XPS spectra and the Raman peak around 1,370 $cm^{-1}$ demonstrated that boron nitride did remain after high temperature treatment during the graphene growth process. And along the graphene grain boundary, the Raman fingerprint of graphene was neatly appeared.

• ETRI Journal
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• 제31권6호
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• 산업기술연구
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• 제14권
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• pp.63-75
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• 1994

The objective of this research is to analyze the phenomena of negative ion behavior in silane plasma chemical vapor deposition. Based on the plasma chemistry, the model equations for the formation and transport of negative ions were proposed and solved. The evolutions of gaseous species along the reactor were presented for several conditions of process variables such as reactor pressure, total gas flow rate, and electric field. Based on the model results, it is found that : (1) The concentration profiles of positive ions show the sharp peaks at the center of plasma reactor. (2) Most of negative ions are located in bulk plasma region, because the negative ions are excluded from the sheath region by electrostatic repulsion.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.958-961
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• 2007

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• 한국표면공학회지
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• 제29권3호
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• pp.149-156
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• 1996

Conducting diamond-like carbon films are synthesized using Triode Magnetron Sputtering-Plasma Enhanced Chemical Vapor Deposition(TMS-PECVD), and are examined by four point probe, microhardeness tester, and scanning electron miscroscopy(SEM). As the target bias and Ar/CH$_4$, ratio increase, the electrical resitivity and microhardness of the films are found to decrease, and also, their surface morphologies tend to be rough. While the resistivities of the films are shown to increase in proportion to the increase of the substrate bias, the microhardness of the films is shown to be maximun value(1600kg/$\textrm{mm}^2$) at a certain substrate bias(-70V). We can obtain the conducting diamond-like carbon films with the microhardness of 1600(kg/$\textrm{mm}^2$) and electrical resitivity of 16($\Omega$cm) at the process condition such as target bias -400V, substrate bias -70V, and Ar/$CH_4$ ratio 20.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.154-157
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• 2012

We present the simultaneous growth of single-walled carbon nanotubes and graphene with the optimal conditions of the synthesizing parameters. The dense and vertically aligned SWNTs having the length of over 100 ㎛ was grown by 2 nm-thick Fe catalytic layer. From 650 ℃, the vertically well-grown SWNTs were obtained by increasing the temperature. The severallayered graphene was synthesized with the gas mixing ratio of 15 : 1(H2 : C2H2) at 650 ℃ and higher temperatures. With these optimal conditions, the vertically well-grown SWNTs and the several-layered graphene were synthesized simultaneously. The presence of SWNTs and the layer of graphene were verified by field emission scanning electron microscopy and high resolution transmission electron microscopy. From the result of this simultaneous synthesizing approach, the possibility of one step growth process of CNTs and grapheme could be verified.

• 한국재료학회지
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• 제16권4호
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• pp.225-230
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• 2006

Nanoimprint lithography (NIL) is a novel method of fabricating nanometer scale patterns. It is a simple process with low cost, high throughput and resolution. NIL creates patterns by mechanical deformation of an imprint resist and physical contact process. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting process. Stiction between the resist and the stamp is resulted from this physical contact process. Stiction issue is more important in the stamps including narrow pattern size and wide area. Therefore, the antistiction layer coating is very effective to prevent this problem and ensure successful NIL. In this paper, an antistiction layer was deposited and characterized by PECVD (plasma enhanced chemical vapor deposition) method for metal stamps. Deposition rates of an antistiction layer on Si and Ni substrates were in proportion to deposited time and 3.4 nm/min and 2.5 nm/min, respectively. A 50 nm thick antistiction layer showed 90% relative transmittance at 365 nm wavelength. Contact angle result showed good hydrophobicity over 105 degree. $CF_2$ and $CF_3$ peaks were founded in ATR-FTIR analysis. The thicknesses and the contact angle of a 50 nm thick antistiction film were slightly changed during chemical resistance test using acetone and sulfuric acid. To evaluate the deposited antistiction layer, a 50 nm thick film was coated on a stainless steel stamp made by wet etching process. A PMMA substrate was successfully imprinting without pattern degradations by the stainless steel stamp with an antistiction layer. The test result shows that antistiction layer coating is very effective for NIL.