Journal of Ceramic Processing Research

Ceramic Processing Research Center (한양대학교 세라믹연구소)
권호 표지

Simultaneous growth of graphene and vertically aligned single-walled carbon nanotubes at low temperature by chemical vapor deposition

  • Hong, Suck Won (Department of Nanomaterials Engineering, Pusan National University) ;
  • Kim, Kwang Ho (School of Materials Science and Engineering, Pusan National University) ;
  • Jung, Hyun Kyung (Department of Diagnostic Radiology, Inje University college of Medicine, Haeundae Paik Hospital) ;
  • Kim, Daesuk (Division of Mechanical System Engineering, Chonbuk National University) ;
  • Lee, Hyung Woo (National Core Research Center for Hybrid Materials solution, Pusan National University)
  • Published : 2012.07.01
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Abstract

We present the simultaneous growth of single-walled carbon nanotubes and graphene with the optimal conditions of the synthesizing parameters. The dense and vertically aligned SWNTs having the length of over 100 ㎛ was grown by 2 nm-thick Fe catalytic layer. From 650 ℃, the vertically well-grown SWNTs were obtained by increasing the temperature. The severallayered graphene was synthesized with the gas mixing ratio of 15 : 1(H2 : C2H2) at 650 ℃ and higher temperatures. With these optimal conditions, the vertically well-grown SWNTs and the several-layered graphene were synthesized simultaneously. The presence of SWNTs and the layer of graphene were verified by field emission scanning electron microscopy and high resolution transmission electron microscopy. From the result of this simultaneous synthesizing approach, the possibility of one step growth process of CNTs and grapheme could be verified.

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