• 대한기계학회논문집
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• 제18권1호
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• pp.193-202
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• 1994

A study of heat transfer and particle deposition has been made numerically for outside vapor deposition process. Heat conduction through the two layer cylinder which consists of the target and the deposited layer is included together with heat transfer and gas jet flow onto the cylinder from the torch. Temperature and flow fields have been obtained by an iterative method and thermophoretic particle deposition has been studied. Of particlar interests are effects of the thickness of the deposited layer, the torch speed and the rotation speed of the cylinder on particle deposition flux and efficiency. Effects of buoyancy, variable properties and tube rotation are included.

• 대한기계학회논문집
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• 제19권11호
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• pp.3063-3071
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• 1995

An experimental study has been carried out for the heat transfer and particle deposition during the Outside Vapor Deposition process. The surface temperatures of deposited layers, and the rates, efficiencies and porosities of particle deposition were measured. It is shown that the axial variation of the surface temperature can be assumed to be quasi-steady and that as the traversing speed of burner is increased, the deposition rate, efficiency and porosity increase due to the decreased surface temperature. As the flow rate of the chemicals is increased, both the thickness of deposition layers and the surface temperature increase. Deposition rate also increases, however, deposition efficiency decreases for tests done. Later passes in early deposition stage result in higher surface temperatures due to increased thickness of porous deposited layers, which cause the deposition rate, efficiency, and porosity to decrease.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 대한기계학회논문집
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• 제18권5호
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• pp.1301-1309
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• 1994

A study of heat transfer and thermophoretic particle deposition has been carried out for the Modified Chemical Vapor Deposition(MCVD) process. A new concept utilizing two torches is suggested to simulate the heating effects from repeated traversing torches. Calculation results for the wall temperatures and deposition efficiency are in good agreement with experimental data. The effects of variable properties are included and heat flux boundary condition is used to simulate the moving torch heating. A conjugate heat transfer which includes heat conduction through solid layer and heat teansfer in a gas in a tube is analyzed. Of particular interests are the effects of torch speeds and solid layer thicknesses on the deposition efficiency, rate and the tapered entry length.

• 대한기계학회논문집
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• 제18권11호
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• pp.3057-3065
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• 1994

An experimental study has been made for heat transfer and particle deposition during the Modified Chemical Vapor Deposition process which is currently utilized to manufacture high quality optical waveguides. The distributions of tube wall temperatures, rates and efficiencies of particle deposition were measured. Results indicate that the temperature distributions of the tube wall in the axial direction yield the quasi-steady form in which temperature distributions fit in one curve if the relative distance from the moving torch is used as an axial coordinate. Due to the repeated heatings from the traversing torch, the wall temperatures are shown to reach the minimum ahead of torch and it is shown that the two torch formulation suggested by Park and Choi is valid to predict this minimum temperature. Measured wall temperatures, particle deposition efficiencies and tapered entry length are compared with the previous modelling results and shown to be in agreement.

• 대한기계학회논문집
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• 제18권1호
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• pp.212-222
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• 1994

In the annular Modified Chemical Vapor Deposition process using two concentric tubes, the inner tube is heated to maintain high temperature gradients to have high thermophoretic force which can increase particle deposition efficiency. However, higher axial velocity in a narrow gap between inner and outer tubes can result in a longer tapered entry length. In the present paper, a new concept using an annular jet from the inner tube is presented and shown to significantly reduce the tapered entry length with maintaining high efficiency. Effects of a jet injection on heat transfer, fluid flow and particle deposition have been studied. Of particular interests are the effects of jet velocity, jet location and temperature on the deposition efficiency and tapered length . Torch heating effects from both the previous and present passes are included and the effect of surface radiation between inner and outer tubes is also considered.

• Applied Microscopy
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• 제45권3호
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• pp.119-125
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• 2015

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted significant attention due to their unique and exotic properties attributed to their low dimensionality. In particular, semiconducting 2D TMDCs such as $MoS_2$, $WS_2$, $MoSe_2$, and $WSe_2$ have been demonstrated to be feasible for various advanced electronic and optical applications. In these regards, process to synthesize high quality 2D TMDCs layers with high reliability, wafer-scale uniformity, controllable layer number and excellent electronic properties is essential in order to use 2D TMDCs in practical applications. Vapor deposition techniques, such as physical vapor deposition, chemical vapor deposition and atomic layer deposition, could be promising processes to produce high quality 2D TMDCs due to high purity, thickness controllability and thickness uniformity. In this article, we briefly review recent research trend on vapor deposition techniques to synthesize 2D TMDCs.

• 한국진공학회지
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• 제13권2호
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• pp.59-64
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• 2004

반도체 레이저를 광원으로 사용하는 원자흡수분광 방법으로 금속증기의 증착 공정을 감시하는 연구를 수행하였다. 전자빔 가열 방식을 이용하여 gadolinium (Gd) 금속을 대량으로 증발시켰다. 파장 영역이 770-794 nm (중심파장 780 nm)인 반도체 레이저빔과 388-396 nm 영역의 제 2 고조파 빔을 진공용기에 입사시켜 증발되는 금속증기의 원자흡수 스펙트럼을 실시간으로 기록하였다. 흡수 스펙트럼을 분석하여 증기의 원자밀도를 구했다. 전자빔 출력을 변화시키면서 측정한 원자밀도를 수정 결정 모니터 장치를 사용하여 측정한 증착률과 비교하였다. 산업적으로 많이 사용되는 Ti 등의 증착 공정 감시에 이 실험에서 구현한 레이저 분광장치를 적용할 수 있다는 것을 제시하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.897-900
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• 2003

Chemical vapor condensation (CVC) reactor was investigated for the deposition of Parylene-N thin films as the passivation layer for organic light emitting diodes (OLEDs). Several gas inlet manifold designs were tested to improve the deposition rate and its uniformity, and it was found that proper inlet design is crucial to get the desired film properties. Process characterization was also performed with the modified inlets to optimize the process variables.

• 한국재료학회지
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• 제26권8호
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.