• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2013

The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1666-1668
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• 1997

This paper reports the optimal gas mixing ratio for color plasma display panel to improve luminous efficiency using gas dischage simulation which contains energy equation. We verified a simulation by measuring vacuum ultraviolet. The luminous efficiency has improved considerably(about 30%) by adding Ar (0.5%), compared with Ne-Xe(4%) mixing gas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• 한국산학기술학회논문지
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• 제17권12호
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• pp.482-487
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• 2016

파장 400 nm 이하의 자외선은 눈 건강에 매우 해롭다. 특히 UVA (315 nm ~ 400 nm)는 백내장, 설안염, 초자체경화 등을 유발할 수 있고, UVB (280 nm ~ 315 nm)는 결막염, 각막염 및 설안염 등을 일으킬 수 있다. 따라서 폴리머 안경렌즈를 사용함에 있어서 자외선의 차단 기능과 가시광선 영역에서 투과되는 빛을 증가시키고, 안경렌즈 표면에서 형성되는 허상을 방지하는 반사방지 기능은 매우 중요하다. 본 연구에서는 m-자일릴렌 디이소시아네이트 모노머와 2,3-Bis-1-propanethiol 모노머 및 벤조트리아졸 UV 흡수제 (SEESORB 709), 안료 혼합물, 이염화 이부틸 주석 촉매제, 알킬인산 에스터 이형제 등의 혼합물을 인젝션 몰드 방법으로 열중합 공정을 적용하여, 굴절률 1.67의 고굴절률 폴리머 안경렌즈를 제조하였다. 폴리머 안경렌즈 표면에서의 반사를 줄이기 위하여 렌즈 양면에 다층박막 반사방지 코팅을 E-beam 증착 시스템으로 코팅하였다. 자외선 차단 폴리머 안경렌즈의 광학적 특성을 UV-visible spectrometer로 분석하였고, 반사방지층을 구성하는 박막의 굴절률, 표면거칠기 등과 같은 박막소재 특성을 각각 Ellipsometry 및 원자힘 현미경으로 분석하였다. 분석 결과 제조된 안경렌즈는 395 nm 파장 이하의 자외선을 99% 이상 완벽하게 차단하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.233-233
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• 1999

본 연구에서는 2성분계 gas(Ne+Xe)를 사용하여 기체압력(p), 진동수(f)에 따라 VUV(Vacuum Ultra Violet) spectrum 147, 173nm 파장과 IR(Infrared) spectrum 823nm, 828nm을 Vacuum Monochromator(Acton-VM 507)를 통해 측정하였다. 휘도(Luminance)와 전력(Power)측면에서 Ne+ Xe 최적의 가스 조성비를 찾기 위해서 Xe의 혼합비에 따른 IR영역인 823nm, 828nm을 측정결과, Xe 4%일 때 좋은 효율을 나타냈다. 기체압력이 200Torr에서는 Xe(3P1)에 기인하는 147nm가 주요한 파장이며, 기체압력이 400Torr, 600Torr일때는 Xe(3P2)에 기인하는 173nm 파장이 주요함을 알 수 있었다. 또한 공간 방전 이미지를 전압 pulse 인가후 ICCD Camera(V-Tek)의 Ready time, On Time을 조절하면서 50ns delay로 관측하였다. 향후 실험계획은 실제 상용화되고 있는 혼합가스 He+Ne+Xe의 조성비에 따른 자세한 실험을 할 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.235-238
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• 2006

Interface formation between $12CaO{\cdot}7Al_2O_3(C12A7:e^-)$ and Alq3 was investigated using in-situ ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The work function and vacuum level shift of $C12A7:e^-$ were change by different surface treatment from 2.6eV to 4.2eV. Also vacuum level shift $(\Delta)$ at the interface were from +0.3eV to -0.3eV.

• 한국진공학회지
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• 제12권S1호
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• pp.40-45
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• 2003

Ru interfacial layer was inserted into Mo-on-Si interface to enhance the extreme ultra-violet (EUV) reflective multilayer properties. The stacking status and optical properties are analyzed using cross-sectional transmission electron microscope (TEM), and reflectometer. About 1.5% of maximum reflectivity can be acquired as predicted in optical simulation, which is thought to be originated from the diffusion inhibition property. Phase defect correctability of the multilayer can be enhanced by the insertion of Ru barrier layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.