• Steel and Composite Structures
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• 제31권2호
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• pp.133-148
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• 2019

This paper reports on the energy absorption characteristics of a lattice-web reinforced composite sandwich cylinder (LRCSC) which is composed of glass fiber reinforced polymer (GFRP) face sheets, GFRP lattice webs, polyurethane (PU) foam and ceramsite filler. Quasi-static compression experiments on the LRCSC manufactured by a vacuum assisted resin infusion process (VARIP) were performed to demonstrate the feasibility of the proposed cylinders. Compared with the cylinders without lattice webs, a maximum increase in the ultimate elastic load of the lattice-web reinforced cylinders of approximately 928% can be obtained. Moreover, due to the use of ceramsite filler, the energy absorption was increased by 662%. Several numerical simulations using ANSYS/LS-DYNA were conducted to parametrically investigate the effects of the number of longitudinal lattice webs, the number of transverse lattice webs, and the thickness of the transverse lattice web and GFRP face sheet. The effectiveness and feasibility of the numerical model were verified by a series of experimental results. The numerical results demonstrated that a larger number of thicker transverse lattice webs can significantly enhance the ultimate elastic load and initial stiffness. Moreover, the ultimate elastic load and initial stiffness were hardly affected by the number of longitudinal lattice webs.

• Nuclear Engineering and Technology
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• 제55권9호
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• pp.3126-3132
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• 2023

To meet the increasing heating needs of the China Fusion Experimental Tokamak Reactor (CFETR), the output power in each Lower Hybrid Current Drive (LHCD) transmission line should be increased from 250 kW to 500 kW. Therefore, a new high-power water load must be developed for the 4.6 GHz 500 kW LHCD system. This paper aims to report the most recent research progress of the water load: aluminum nitride (AlN) ceramic is used as the media material to isolate the water and vacuum, and the radio frequency (RF) simulation results show that the return loss of the water load is less than -25dB at 4.6 GHz over a wide temperature range. Under 500 kW continuous wave (CW) operation, the maximum temperatures of the ceramic and water are separately 67 ℃ and 62 ℃, resulting in thermal deformation of the ceramic of approximately 0.003 mm. Moreover, the AlN water load was tested on the 4.6 GHz 250 kW high-power test bench and found to work well with low reflected power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• 한국진공학회지
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• 제14권2호
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• pp.91-96
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• 2005

양성자 주입과 웨이퍼접합기술을 접목한 ion-cut기술로서 SOI 웨이퍼를 제조하는 기술을 개발하였다. SRIM 전산모사에 의하면 일반 SOI 웨이퍼 (200nm SOI, 400nm BOX) 제조에는 65keV의 양성자주입이 요구된다. 웨이퍼분리를 위한 최적 공정조건을 얻기 위해 조사선량과 열처리조건(온도 및 시간)에 따른 blistering 및 flaking 등의 표면변화를 조사하였다. 실험결과 유효선량범위는 $6\~9times10^{16}H^+/cm^2$이며, 최적 아닐링조건은 $550^{\circ}C$에서 30분 정도로 나타났다. RCA 세정법으로서 친수성표면을 형성하여 웨이퍼 직접접합을 수행하였으며, IR 조사에 의해 무결함접합을 확인하였다 웨이퍼 분리는 예비실험에서 정해진 최적조건에서 이루어졌으며, SOI층의 안정화를 위해 고온열처리($1,100^{\circ}C,\;60$분)를 시행하였다. TEM 측정상 SOI 구조결함은 발견되지 않았으며, BOX(buried oxide)층 상부계면상의 포획전하밀도는 열산화막 계면의 낮은 밀도를 유지함을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.176-177
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• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.296-296
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• 2014

We investigate experimentally and theoretically the splitting of surface plasmon (SP) resonance peaks under TE- and TM-polarized illumination. The SP structure at infrared wavelength is fabricated with a 2-dimensional square periodic array of circular holes penetrating through Au (gold) film. In brief, the processing steps to fabricate the SP structure are as follows. (i) A standard optical lithography was performed to produce to a periodic array of photoresist (PR) circular cylinders. (ii) After the PR pattern, e-beam evaporation was used to deposit a 50-nm thick layer of Au. (iii) A lift-off processing with acetone to remove the PR layer, leading to final structure (pitch, $p=2.2{\mu}m$; aperture size, $d=1.1{\mu}m$) as shown in Fig. 1(a). The transmission is measured using a Nicolet Fourier-transform infrared spectroscopy (FTIR) at the incident angle from $0^{\circ}$ to $36^{\circ}$ with a step of $4^{\circ}$ both in TE and TM polarization. Measured first and second order SP resonances at interface between Au and GaAs exhibit the splitting into two branches under TM-polarized light as shown in Fig. 1(b). However, as the incidence angle under TE polarization is increased, the $1^{st}$ order SP resonance peak blue-shifts slightly while the splitting of $2^{nd}$ order SP resonance peak tends to be larger (not shown here). For the purpose of understanding our experimental results qualitatively, SP resonance peak wavelengths can be calculated from momentum matching condition (black circle depicted in Fig. 2(b)), $k_{sp}=k_{\parallel}{\pm}iG_x{\pm}jG_y$, where $k_{sp}$ is the SP wavevector, $k_{\parallel}$ is the in-plane component of incident light wavevector, i and j are SP coupling order, and G is the grating momentum wavevector. Moreover, for better understanding we performed 3D full field electromagnetic simulations of SP structure using a finite integration technique (CST Microwave Studio). Fig. 1(b) shows an excellent agreement between the experimental, calculated and CST-simulated splitting of SP resonance peaks with various incidence angles under TM-polarized illumination (TE results are not shown here). The simulated z-component electric field (Ez) distribution at incident angle, $4^{\circ}$ and $16^{\circ}$ under TM polarization and at the corresponding SP resonance wavelength is shown in Fig. 1(c). The analysis and comparison of theoretical results with experiment indicates a good agreement of the splitting behavior of the surface plasmon resonance modes at oblique incidence both in TE and TM polarization.

• 한국진공학회지
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• 제19권5호
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• pp.341-346
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• 2010

본 논문에서는 반응성 스퍼터링(Reactive Sputtering) 공정으로 $Si_xO_y$ 박막과 $Si_xN_y$ 박막을 4층 구조로 적층하고 400~700 [nm]의 가시광 영역에서 빛의 반사를 줄이기 위한 반사방지 코팅(Anti-Reflection Coating)으로의 응용 가능성을 조사하였다. 스퍼터링 타겟으로 6 [inch] 직경의 Si 단결정을 사용하였고, 반응성 스퍼터링 가스는 $Si_xO_y$ 박막 증착에서 Ar과 $O_2$를, $Si_xN_y$ 박막 증착에서는 Ar과 $N_2$를 사용하였으며, 스퍼터링 파워로는 DC pulse를 사용하였다. 1,900 [W] DC pulse power에서 Ar:$O_2$=70:13 [sccm]의 반응성 스퍼터링으로 2.3 [nm/sec]의 증착률과 1.50의 굴절률을 보이는 $Si_xO_y$ 박막을 제작하였고, Ar:$N_2$=70:15 [sccm]의 반응성 스퍼터링으로 1.8 [nm/sec]의 증착률과 1.94의 굴절률을 보이는 $Si_xN_y$ 박막을 제작하였다. 이 두 종류의 박막을 이용해서 시뮬레이션을 통해 4층 구조의 반사방지 코팅 구조를 설계한 후, 설계결과에 따라 각 박막의 두께를 순차적으로 변화시켜 증착하였다. 4층 구조 $Si_xO_y-Si_xN_y$의 반사도 측정 결과 550 [nm] 대역에서 1.7 [%]의 반사와 400 [nm]와 650 [nm] 영역에서 1 [%]의 반사를 보였으며, 가시광 영역에서 성공적인 "W" 형태의 반사방지 코팅 특성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.310-311
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• 2011

Dual-frequency (DF) capacitively coupled plasmas (CCP) are used to separately control the mean ion energy and flux at the electrodes [1]. This separate control in capacitively coupled radio frequency discharges is one of the most important issues for various applications of plasma processing. For instance, in the Plasma Enhanced Chemical Vapor Deposition processes such as used for solar cell manufacturing, this separate control is most relevant. It principally allows to increase the ion flux for high deposition rates, while the mean ion energy is kept constant at low values to prevent highly energetic ion bombardment of the substrate to avoid unwanted damage of the surface structure. DF CCP can be analyzed in a fashion similar to single-frequency (SF) driven with effective parameters [2]. It means that DF CCP can be converted into SF CCP with effective parameters such as effective frequency and effective current density. In this study, comparison of DF CCP and its converted effective SF CCP is carried out through particle-in-cell/Monte Carlo (PIC-MCC) simulations. The PIC-MCC simulation shows that DF CCP and its converted effective SF CCP have almost the same plasma characteristics. In DF CCP, the negative resistance arises from the competition of the effective current and the effective frequency [2]. As the high-frequency current increases, the square of the effective frequency increases more than the effective current does. As a result, the effective voltage decreases with the effective current and it leads to an increase of the ion flux and a decrease of the mean ion energy. Because of that, the negative resistance regime can be called the preferable regime for solar cell manufacturing. In this preferable regime, comparison of DF (13.56+100 or 200 MHz) CCP and SF (60 MHz) CCP with the same effective current density is carried out. At the lower effective current density (or at the lower plasma density), the mean ion energy of SF CCP is lower than that of DF CCP. At the higher effective current density (or at the higher plasma density), however, the mean ion energy is lower than that of SF CCP. In this case, using DF CCP is better than SF CCP for solar cell manufacturing processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• 마이크로전자및패키징학회지
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• 제30권1호
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• pp.90-94
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• 2023

금속 발열체는 높은 열손실과 화재 위험성 등의 문제점이 있어 우수한 열전도도와 전기전도도 특성을 갖는 탄소섬유가 대체소재로 각광받고 있다. 그러나 탄소섬유는 약 200℃ 이상에서 산화하여 단선되기 때문에 발열체 적용이 제한적이며, 현재 진공관 형태로 탄소섬유 발열체가 일부 사용되고 있다. 본 연구에서는 진공관을 사용하지 않고 대기 중탄소섬유 산화방지를 위해 전기영동증착법으로 탄소섬유 표면에 내열성이 높은 폴리이미드를 코팅하였으며 인가전압에 따른 코팅 두께와 내열성을 확인하였다. 폴리이미드를 코팅한 탄소섬유 발열체를 직렬 연결하여 만든 히터는 최대 292℃ 까지 안정적인 발열 특성을 보였으며 이는 열전달 시뮬레이션의 발열온도 결과와 유사하였다. 전기영동증착방법으로 코팅한 폴리이미드 층은 200℃ 이상에서 탄소섬유의 산화방지에 효과적이며 발열 안정성을 요구하는 2차전지, 우주항공, 전기자동차 등 다양한 발열 부품에 적용 가능할 것으로 기대된다.