• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.271-272
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• 2012

Bulk Metallic Glasses (BMGs or amorphous alloy) exhibit high strength and good corrosion resistance. Applications of thin films and micro parts of BMGs have been used a lot since its inception in the research of BMGs. However, Application and fabrication of BMGs are limited to make structural materials. Thin films of BMGs which is sputtered on the surface of structural materials by sputtering process is used to improve limits about application of BMGs. In order to investigate the difference of properties between designed alloys and thin films, we identified that thin films deposited on the surface that have the characteristic of the amorphous films and the composition of designed alloys. Zr-Cu (Cu=30, 35, 38, 40, 50 at.%) and Zr-Cu-Al (Al=10 at.% fixed, Cu=26, 30, 34, 38 at.%) alloys were fabricated with Zr (99.7% purity), Cu (99.997% purity), and Al (99.99% purity) as melting 5 times by arc melting method before rods 2mm in diameter was manufactured. In order to analyze GFA (Glass Forming Ability), rods were observed by Optical Microscopy and SEM and $T_g$, $T_x$, ($T_x$ is crystallization temperature and $T_g$ is the glass transition temperature) and Tm were measured by DTA and DSC. Powder was manufactured by Gas Atomizer and target was sintered using powder in large supercooled liquid region ($=T_x-T_g$) by SPS(Spark Plasma Sintering). Amorphous foil was prepared by RSP process with 5 gram alloy button. The composition of the foil and sputtered thin film was analyzed by EDS and EPMA. In the result of DSC curve, binary alloys ($Zr_{62}Cu_{38}$, $Zr_{60}Cu_{40}$, $Zr_{50}Cu_{50}$) and ternary alloys ($Zr_{64}Al_{10}Cu_{26}$, $Zr_{56}Al_{10}Cu_{34}$, $Zr_{52}Al_{10}Cu_{38}$) have $T_g$ except for $Zr_{70}Cu_{30}$ and $Zr_{60}Al_{10}Cu_{30}$. The compositions with $T_g$ made into powders. Figure shows XRD data of thin film showed similar hollow peak.

• Journal of the Korean Institute of Gas
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• v.21 no.6
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• pp.52-60
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• 2017

In diffusion process exhaust line during semiconductor manufacturing process, In order to improve the transportation efficiency in the piping by removing "The reaction by-product, $ZrO_2$ and The unreacted material, TEMAZ, TMA, $O_3$, etc" and "Powder being deposited", the piping temperature was raised to $80^{\circ}C$ or more by using the heater jacket, and the bellows at the rear end of the vacuum pump ruptured. So conducted a case study and try to prevent the similar accidents from occurring through case studies. The causes of the accident were analyzed as follows: the inflow of outside air due to the generation of a gap on the suction side of the vacuum pump and heating the pipe with the heater jacket resulted in the overpressure in the pipe due to the volumetric expansion of the gas generated by decomposition of the unreacted TEMAZ, It can be assumed that the most vulnerable bellows of the piping has been ruptured. In order to prevent such accidents, This study is aimed to identify the cause of pipeline rupture accident and to establish safety measures for the prevention of similar accidents by evaluating physical hazards of TEMAZ, which is assumed to be the cause of pipe rupture accident.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.113-113
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• 2000

직접천이형 wide band gap(3.4eV) 반도체중의 하나인 GaN를 청색 및 자외선 laser diode, 고출력 전자장비 등으로 응용하기 위해서는 낮은 접합저항을 갖는 Ohmic contact이 선행되어야 한다. 그러나 만족할만한 p-type GaN의 Ohmic contact은 아직 실현되고 있지 못하며, 이는 GaN와 접합 금속과의 구체적인 반응의 연구를 필요로 한다. 본 연구에서 앞서 Pt, Pt, Ni등의 late transition metal을 p-GaN에 접합시킨 결과 이들은 접합 당시 비교적 평탄하나 후열 처리과정에서 비교적 낮은 온도에서 기판과 열팽창계수의 차이로 인하여 평탄성을 잃어버리면서 barrier height가 증가한다는 사실을 확인하였다. 따라서 본 연구에서는 이러한 열적 불안정성을 극복하기 위하여 Ni과 Pd를 차례로 증착하고 가열하면서 interfacial reaction, film morphology, Fermi level의 움직임을 monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy) 그리고 ex-situ AFM을 이용하여 밝히고자 하였다. 특히 후열처리에 의한 계면 반응에 수반되는 구성 금속원소 간의 합금현상과 금속 층의 평탄성이 밀접한 관계가 있다는 것을 확인하였다. 이러한 합금과정에서 나타나는 금속원소들의 중심 준위의 이동을 체계적으로 규명하기 위해서 Pd1-xNix와 Pd1-xGax 합금들의 표준시료를 arc melting method로 만들어 농도에 따른 금속원소들의 중심 준위의 이동을 측정하여, Pd/Ni/p-GaN 및 Ni/Pd/p-GaN 계에서 열처리 온도에 따른 interfacial reaction을 확인하였다. 그 결과 두 계가 상온에서 nitride 및 alloy를 형성하지 않고 고르게 증착되고, 열처리 온도를 40$0^{\circ}C$에서 $650^{\circ}C$까지 증가시킴에 따라 계면반응의 부산물인 metallic Ga은 증가하고 있으마 nitride는 여전히 형성되지 않는 것을 확인하였다. 증착당시 Ni이 계면에 있는 Pd/Ni/p-GaN의 경우에는 52$0^{\circ}C$까지의 열처리에 의하여 Ni과 Pd가 골고루 섞이고 그 평탄성도 유지되고 barier height의 변화도 없었다. 더 높은 $650^{\circ}C$ 가열에 의해서는 surface free energy가 작은 Ga의 활발한 편석 현상으로 인해 표면은 Ga이 풍부한 Pd-Ga의 합금층으로 덮이고, 동시에 작은 pinhole들이 발생하며 barrier height도 0.3eV 가량 증가하게 된다. 반면에 증착당시 Pd이 계면에 있는 Ni/Pd/p-GaN의 경우에는 40$0^{\circ}C$의 가열까지는 두 금속이 그들 계면에서부터 섞이나, 52$0^{\circ}C$의 가열에 의해 이미 barrier height가 0.2eV 가량 증가하기 시작하였다. 더 높은 $650^{\circ}C$가열에 의해서는 커다란 pinhole, 0.5eV 가량의 barrier height 증가, Pd clustering이 동시에 관찰되었다. 따라서 Ni과 Pd의 일함수는 물론 thermal expansion coefficient가 거의 같으며 surface free energy도 거의 일치한다는 점을 감안하면, 이렇게 뚜렷한 열적 안정성의 차이는 GaN와 contact metal과의 반응시작 온도(disruption onset temperature)의 차이에 기인함을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함이 줄어 들고, 이는 계면의 N의 out-diffusion을 방지하여 p-type GaN의 barrier height 증가를 막게 된다.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.581-586
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• 2006

We have generated the argon plasma in the diode chamber based on the established coaxial electrode type and investigated the emitted visible light for emission spectroscopy. We applied various voltages $2\sim3.5kV$ to the device by 0.5kV, and obtained the emission spectrum data for the focused plasma in the diode chamber on the argon pressure of 330 mTorr. The Ar I and Ar II emission line are observed. The electron temperature and ion density have been measured by the Boltzmann plot and Saha equation from assumption of local thermodynamic equilibrium (LTE) The Ar I and Ar II ion densities have been calculated to be $\sim10^{15}/cc\;and\;~10^{13}/cc$, respectively, from Saha equation.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.225-232
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• 2011

Reactive ion etching (RIE) technique for maskless surface texturing of mc-silicon solar wafers has been applied and succeed in fabricating a grass-like black-silicon with an average reflectance of $4{\pm}1%$ in a wavelength range of 300~1,200 nm. In order to investigate the optimized texturing conditions for mass production of high quantum efficiency solar cell Surface characteristics such as the spatial distribution of average reflectance, micrscopic surface morphology and minority carrier lifetime were monitored for samples from saw-damaged $15.6{\times}15.6\;cm^2$ bare wafer to key-processed wafers as well as the mc-Si solar cells. We observed that RIE textured wafers reveal lower average reflectance along from center to edges by 1% and referred the origin to the non-uniform surface structures with a depth of 2 times deeper and half-maximum width of 3 times. Samples with anti-reflection coating after forming emitter layer also revealed longer minority carrier lifetime by 40% for the edge compared to wafer center due to size effects. As results, mc-Si solar cells with RIE-textured surface also revealed higher efficiency by 2% and better external quantum efficiency by 15% for edge positions with higher height.

• Resources Recycling
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• v.29 no.4
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• pp.3-14
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• 2020

Titanium sponge is industrially produced by the Kroll process. In order to understand the importance of the emerging smelting and recycling process, it is necessary to review the conventional production process of titanium. Therefore this paper provides a general overview of the conventional titanium manufacturing system mainly by the Kroll process. The Kroll process can be divided into four sub-processes as follows: (1) Chlorination of raw TiO₂ with coke, by the fluidized bed chlorination or molten salt chlorination (2) Magnesium reduction of TiCl₄ and vacuum distillation of MgCl₂ and Mg by reverse U-type or I-type with reduction-distillation integrated retorts (3) Electrolysis process of MgCl₂ by monopolar cells or multipolar cells to electrolyze into chlorine gas and Mg. (4) Crushing and melting process in which sponge titanium is crushed and then melted in a vacuum arc furnace or an electron beam furnace Although the apparatus and procedures have improved over the past 80 years, the Kroll process is the costly and time-consuming batch operation for the reduction of TiCl₄ and the separation of MgCl₂.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.3
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• pp.244-252
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• 2005

It is very interesting and important in the academic point of view and in practical use the hydrogen-induced phase separation(HIPS) which appears during hydrogen heat treatment. Since hydrogen can be removed very fast by pumping it out the hydrogen-induced new lattice phase which can not be obtained without hydrogen can be preserved as meta-stable state. In this study it has been investigated whether the HIPS appear in Pd-Al, Pd-Co, Pd-Cr, Pd-Ti, Pd-V and Pd-Zr alloys and discussed thermodynamic representation of the HIPS. The Pd alloys were arc-melted under argon atmosphere and remelted 4 or 5 times for homogenization. The alloys were annealed at 600$^{\circ}C$ under vacuum for 24 hrs and then subjected to pressure-composition isotherm measurements at 100$^{\circ}C$. The hydrogen heat treatment(HHT) of samples was carried out at 600$^{\circ}C$ under hydrogen pressure of 70 bar for 6 days and PC isotherms at 100$^{\circ}C$ were measured. By comparing the PC isotherms measured before and after HHT, occurrence of phase separation was determined. The experimental results showed that the HIPS appeared only in Pd-0.05Co alloy. For Pd-Co alloys with various composition the PC isotherms were measured. By adopting Park-Flanagan model for ternary thermodynamics the Gibbs free energy change for Pd-Co-H solid solution was calculated and subsequently with this the HIPS in Pd-Co alloy was explained fairly.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.257-262
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• 2005

Nano-sized ZrVFe alloy powders were prepared by the ablation of powder compact in alcobol using a Nd-YAG pulsed Laser. The $Zr_{57}V_{35.}8Fe_{7.2}$ alloy commercially designated as ST707 has long been known as the ideal solution for various vacuum applications. The target for the ablation was sintered pellets of $Zr_{57}V_{35.}8Fe_{7.2}$ alloy powder. The alloy was prepared by arc melting and Hydride-DeHydride method. The ablated powders were mostly circular having fairly large size distribution smaller than 200 nm in all cases. The X-ray diffraction study revealed that the ablated alloy retained the crystal structure of the target alloy. Nevertheless, Fe and V contents in the ablated powder were lower than those in the target alloy. This was believed to result from the high vapour pressures of Fe and V compared to that of Zr. The size of the powders ablated at high energy fluence tends to decrease due at least partly to the breakdown of previously made ones.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.3
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• pp.259-263
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• 2004

In the manufacture progress of LCD or semiconductor, there are used many kinds of gas like erosion gas, dilution gas, toxic gas as a progress which used these gas there are required high puritize to increase accumulation rate of semiconductor or LCD materials work progress of semiconductor or LCD it demand many things like the material which could minimize metallic dust that could be occured by reaction between gas and transfer pipe laying material, illumination of the surface, emition of the gas, metal liquation, welding etc also demand quality geting stricted. Material-Low-sulfur-contend (0.007-0010), vacuum-arc-remelt(VAR), seamless, high-purity tubing material is recommend for enhance welding lower surface defect density All wetted stainless steel surface must be 316LSS elecrto polishinged with ${\leq}0.254{\mu}m$($10.0{\mu}in$) Ra average surface finish, $Cr/Fe{\geq}1.1$ and $Cr_2O_3$ thickness ${\geq}25{\AA}$ From the AES analytical the oxide layer thickness (23.5~36 angstroms silicon dioxide equivalent) and chromum to iron ratios is similar to those generally found on electropolished stainless steel., molybdenum and silicon contaminants ; elements characteristic of stainless steel (iron, nickel and chromium); and oxygen were found on the surface Phosphorus and nitrogen are common contaminants from the electropolish and passivation steps.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8679-8683
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• 2015

Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.