• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.193-195
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• 2020

최근 반도체 제조공정에서 핵심기술의 국산화에 대한 관심이 증가하고 있다. 따라서 제조공정의 하나인 에칭공정의 핵심기술인 RF플라즈마 기술에대한 관심또한 증가하고 있다. 본 논문에서는 그중에서도 RF플라즈마에 사용되는 임피던스 정합기에 사용되는 가변커패시터에 대한 새로운 구조를 제안한다. 최근까지 임피던스 정합기는 기계식으로 가변하는 가변커패시터(Vacuum Variable Capacitor, 이하 VVC)를 주로 사용했다. 하지만 기계식으로 커패시턴스를 가변하기 때문에 공정시간의 상당부분을 정합시간에 소모하게 된다. 따라서 최근에 정합시간을 줄이기 위해 전력전자 기술을 사용하여 전기적으로 커패시턴스를 가변하는 가변 커패시터 (Electrical Variable Capacitor, 이하 EVC)가 개발되고 있다. 그러나 EVC는 부피가 크고 커패시턴스의 해상도가 적다는 문제를 갖는다. 그러므로 본 논문에서는 VVC와 EVC의 장점을 결합하여 새로운 구조의 가변 커패시터인 하이브리드 가변 커패시터 (Hybrid Variable Capacitor, 이하 HVC)를 제안한다.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.32-37
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• 2022

As semiconductors become finer, equipment must perform precise and accurate processes to achieve the desired wafer fabrication requirement. Radio frequency power delivery system in plasma system plays a critical role to generate the plasma, and the role of impedance matching unit is critical to terminate the reflected radio frequency power by modifying the impedance of the matching network in the plasma equipment. Impedance matching unit contains one fixed inductor and two variable vacuum capacitors whose positions are controlled two step motors. Controlling the amount of vacuum variable capacitor should be made as soon as possible when the mismatched impedance is detected. In this paper, we present the impedance matching algorithm using the phase sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.232-240
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• 2022

A variable vacuum capacitor (VVC), which is a variable element, is used to match impedance in plasma that changes with various impedance values, and its use is expanding with the rapid growth of the semiconductor business. Since VVCs have to secure insulation performance and vary capacitance within a compact size, electrode design and manufacturing are very important; thus, various technologies such as part design and manufacturing technology and vacuum brazing technology are required. In this study, based on the model of an advanced foreign company that is widely used for impedance matching in the manufacture of semiconductors and displays, a VVC that can realize the same performance was developed. The electrode part was designed, the consistency was confirmed through analysis, and the precision of capacitance was improved by designing a cup-type electrode to secure the concentricity of the electrode. As a result of the evaluation, all requirements was satisfied. We believe that self-development will be possible if satisfactory responses are received through evaluation by VVC consumers in the future.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.64-71
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• 2023

If an impedance mismatch occurs between the source and load in a Radio Frequency transmission system, reflected power is generated. This results in incomplete power transmission and the generation of Reflected Power, which returns to the Radio Frequency generator. To minimize this Reflected Power, Impedance matching is performed. Fast and efficient Impedance matching, along with converging reflected power towards zero, is advantageous for achieving desired plasma characteristics in semiconductor processes. This paper explores Impedance matching by adjusting the Vacuum Variable Capacitor of an L-type Matching Module based on the trends observed in the voltage of the Phase Sensor and Electromotive Force voltage. After assessing the impedance matching characteristics, the findings are described.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.247.1-247.1
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• 2014

The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.3
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• pp.9-24
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• 1968

This report is concerned with the optimum design of hyper-aprupt p-n junctiea silion diode and fabriction of this diode usable for electrical tuning application. Impurity profile in the junction was assumed to clean exponential function. With this assunntion, an optimum criterion for designing standard AM radio tuning capacitor was derived. In the diffusion process, after aluminum and antimony as impurties were deposited in vacuum on a P-type silicon wafer, the diffusion was followed by loading the wafer into the high temperature furnace.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1868-1870
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• 2000

As a drive for an ETC (Electro-thermal Chemical) launcher, a large pulse power system of a 2.4MJ energy storage was designed, constructed and tested. The overall power system consists of eight capacitive 300kJ energy storage banks. In this paper we describe the design features, setup and operation test result of the 300kJ pulsed power module. Each capacitor bank of the 300kJ module consists of six 22kV 50kJ capacitors. A triggered vacuum switch (TVS-43) was adopted as the main pulse switch. Crowbar diode circuits, variable multi-tap inductors and energy dumping systems are connected to each high power capacitor bank via bus-bars and coaxial cables. A parallel crowbar diode stack is fabricated in coaxial structure with two series 13.5kV, 60kA avalanche diodes. The main design parameters of the 300kJ module are a maximum current of 180kA and a pulse width of 0.5 - 3ms. The electrical performances of each component and current output variations into resistive loads have been investigated.