• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.344-349
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• 2005

The optical and electrical characteristics of plasma display panel(PDP) using the vacuum in-line sealing technology compared with the conventional sealing process in this research. This PDP consisted of MgO protecting layer by e-beam evaporation and battier rib, transparent dielectric layer, dielectric layer, and electrodes by screen printer and then sealed off on Ne-Xe(4 ％) 400 Torr and 430。C. The brightness and luminous efficiency were good as the base vacuum level was higher, and it was to check the advantage of high vacuum level sealing, one of the strong points of the vacuum in-line sealing process. However, the brightness and luminous efficiency was dropped sharply because of a crack on MgO protecting layer by the difference of the expansion and contraction stress on high temperature in the vacuum states between MgO and substrate. Fortunately, the crack was prevented by MgO was deposited on higher temperature than 300。C. Finally, the PDP, was fabricated by the vacuum in-line sealing process, resulted the lower brightness than processing only the thermal annealing treatment in the vacuum chamber, but the luminous efficiency was increased by the reducing power consumption with the decreasing luminous current. The vacuum in-line sealing technology was not to need the additional thermal annealing process and could reduce the fabrication process and bring the excellent optical and electrical properties without the crack of MgO protecting layer than the conventional sealing process.

• 한국수소및신에너지학회논문집
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• 제16권3호
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• pp.284-289
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• 2005

Thermal analysis of cryogenic-capable vessels with insulations have been carried out to store liquid hydrogen($LH_2$). The combined insulations of MLI(Multi-Layer Insulation) and VCS(Vapor-Cooled Shield) under high vacuum are considered in the analysis for various volumes of vessels. Vapor-Cooled Shields(VCS) are installed at cylinder wall as well as disc side of the $LH_2$ vessels. The results indicate that optimal distribution of boiloff vapor from $LH_2$ vessel into two sides of VCS exists based on the evaporation loss. As the volume of $LH_2$ vessel is increased, mass flow rate of boiloff is increased while the evaporation loss per unit volume is decreased.

• Applied Science and Convergence Technology
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• 제24권5호
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• pp.142-150
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• 2015

A failure analysis of tungsten filaments used in quadrupole mass spectrometer for plasma process monitoring was carried by using SEM and EDS. Failed at high temperature, filaments showed two kinds of failure modes. The one is that diameter of filament became thinner gradually and finally snapped. The other is that filament abruptly snapped almost at a right angle. The EDS analysis showed Fe and C, including W and Fe, on the surface of failed filament. when failed filaments were treated with plasma in mixture of Ar and $CF_4$, the amount of Fe and C decreased. The failure analysis of filament showed that the cause of filament failure is thermal evaporation and grain growth of tungsten at high temperature.

• 한국막학회:학술대회논문집
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• 한국막학회 1995년도 춘계 총회 및 학술발표회
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• pp.34-35
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• 1995

The unique feature of pervaporation is the mass transfer from a liquid phase to a vapor phase through a non-porous polymeric membrane. When a liquid mixture is brought into contact with a membrane at one side, it is sorbed into the membrane. Due to a driving force applied across the membrane, the sotbed liquid molecules permeate through the membrane and evaporate at the downstream side of the membrane. In pervaporation the permeated species are usually removed from the downstream side under a relatively low vapor pressure, for example by evacuation with a vacuum pump. As far as this condition is fulfilled, the evaporation step can be considered to be much faster than sorption or diffusion. Hence evaporation does not contribute to permselectivity. Therefore the separation by pervaporation results from the differences in the preferential sorption of the individual components of a mixture into the membrane together with the diffusion rates through the membrane. This postulation implies that both sorption and diffusion phenomena have to be accounted for to understand the physico-chemical nature of the pervaporation separation process.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.239-243
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• 2008

In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.688-691
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• 1999

Light was of electric lamp was reflected by bulb reflector. In order to improve the efficiency of the electric lamp. it is inevitable that lamp, it is inevitable that improve the reflectance of bulb reflector. Important factors that affect the reflectance of bulb reflector is working pressure, distance between evaporation source to substrate, the situation of surface of glass. etch rate of glass, etc. In this paper. confirmed the effect of etching, working pressure etc. , and its effect for the reflectance of bulb reflector. Especially, concentration of HF in the etching solution and etching time is to be importnace for characteristic of bulb reflector.

• 대한전자공학회논문지
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• 제17권5호
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• pp.43-47
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• 1980

전자선가열 도착법에 의해 ∼ 10-4 Torr의 산소 분권기중에서 In2O3 투명전도막을 제작하였으며, 막의 최적 훈착조건과 그의 전기적, 광학적 성질을 측정, 분석하였다. 최적 증착조건은 증착구도 3∼7 A/sec, 기판온도 300℃이상, SnO2 첨가률 2∼5 wt. % 이었으며, 이러한 조건하에서 막피 비저항은 2 × 10-4 Ω·cm 이었고, 가시광 투과률은 85∼90% 이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.101-104
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• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.11-16
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• 2010

The performance of an OLED fabrication system strongly depends on the design of the evaporation cell-source. Therefore, necessity of the preceding study for cell source development of new concept is becoming increase. A development plan to substitute for experiment is applied as use simulation. In this study interpret behavior of a particle through DSMC techniques, and in this paper presenting a form to make so as to have better performance of the pointtype cell source which had a nozzle.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.