Fabrication of Transparent Conducting Films of $In_2O_3$ by Vacuum Deposition

진공증착법에 의한 $In_2O_3$ 투명전도막의 제작

Transparent conducting films of In2O3 were fabricated by elect yon beam evaporation method in an oxygen atmosphere of -10-4 Torr., and the optimum conditions of film deposition, as well as their electrical and optical properties were measured and analysed. Evaporation rate of 3~7A/sec, substrate temperature of over 30$0^{\circ}C$, and SnO2 doping of 2~5wt. % were the optimum deposition conditions. Under these conditions , the resistivities of the films were 2$\times$10-4 $\Omega$.cm and the visible transmittances were 85~90%.

전자선가열 도착법에 의해 ∼ 10-4 Torr의 산소 분권기중에서 In2O3 투명전도막을 제작하였으며, 막의 최적 훈착조건과 그의 전기적, 광학적 성질을 측정, 분석하였다. 최적 증착조건은 증착구도 3∼7 A/sec, 기판온도 300℃이상, SnO2 첨가률 2∼5 wt. % 이었으며, 이러한 조건하에서 막피 비저항은 2 × 10-4 Ω·cm 이었고, 가시광 투과률은 85∼90% 이었다.