• Journal of Sericultural and Entomological Science
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• v.53 no.2
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• pp.87-91
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• 2015

There is no specific data on Entomogenous fungus (DongChungHaCho) in accordance with the silkworm varieties, despite of very high value industrial use as functional materials at domestic and abroad. In this study, we investigated culture condition and characteristics of Paecilomyces tenuipes in 3 silkworm cultivars and 2 specific silkworm breeds. Infection rate of P. tenuipes for silkworm varieties was the highest Kumokjam, followed by Baegokjam, Daeseongjam, Golden silk, Yeonnokjam in that order. The optimum culture conditions were as follows: dark condition, $22^{\circ}C{\pm}1$, and about $4cm^2$ in planting density per pupa. Also, we have developed annual production technologies of P. tenuipes. First, in order that the moisture content of the infection pupa became 3% or less in the natural condition. Second, the dried pupa must be vacuum-packed and was kept under $4^{\circ}C$. Finally, by restoring the moisture content of the dried pupa and culture in optimal condition, the technique for annual production of the P. tenuipes was achieved. Therefore, we expect that the use of Kumokjam and annual production technique will contribute significantly to farm income.

• Food Science of Animal Resources
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• v.39 no.1
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• pp.121-138
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• 2019

In the present study, comparative efficacy of natural as well as synthetic tenderizers on the quality characteristics of restructured spent hen meat slices (RSHS) was studied. Four different batches of RSHS viz. Control (without any tenderizer), T1 (1.25% calcium chloride replacing salt in formulation), T2 and T3 (1.5% each of pineapple rind and fig powder, replacing binder in the formulation) were developed in pre-standardized formulation. Vacuum tumbling was performed for 2.5 h and cooked product (RSHS) was assayed for quality attributes. Samples were packaged in aerobic conditions, stored for 21 days under refrigeration ($4{\pm}1^{\circ}C$) and were evaluated for pH, oxidative and microbial quality parameters at regular interval of 7 days. Water holding capacity of T2 was recorded the highest and significantly higher (p<0.05) than all other samples. The textural attributes of T2 were comparable to T1 but significantly higher (p<0.05) than C and T3. The colour attributes ($L^*$, $a^*$, and $b^*$ value) of T2 and T3 were improved due to use of natural tenderizers. During sensory evaluation, tenderness scores for T2 samples were recorded the highest. Throughout storage period, thiobarbituric acid reactive substances (TBARS), free fatty acids (FFA) and peroxide value (PV) followed an increasing trend for control as well as treated products; however, T2 showed a significantly (p<0.05) lower value than control and other treated samples. It can be concluded that good quality RSHS with better storage stability could be prepared by utilizing 1.5% pineapple rind powder as natural tenderizer.

• Food Science and Preservation
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• v.30 no.4
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• pp.683-690
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• 2023

The study was conducted to confirm the possibility of producing alcohol beverages from Dae-hong peaches. Upon examining the quality characteristics of distilled soju using Dae-hong peaches, the alcohol content was 1.12 to 1.16 times higher than that from the atmospheric distillation method. Soju with 20 % peach extract content had the highest alcohol content and the lowest volatile acid content, indicating a low possibility of causing irritating odors. Acetaldehyde was 1.3-1.94 times lower in vacuum-distilled soju, and methanol was not detected in all samples. The absorbance value of furfural, a burnt component generated during distillation is high in atmospheric distillation, which can cause irritating odors. Upon examining the volatile fragrance components, isoamylalcohol and 1-propanol were found to be the main components, both of which were the highest in the treatment group with 20 % peach extract content. The electronic nose analysis revealed that this group showed the most opposing flavor patterns to the control group, and when distilled under reduced pressure with 20 % addition of Dae-hong peaches can produce high-quality soju.

• Food Science of Animal Resources
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• v.29 no.2
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• pp.178-187
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• 2009

This study was carried out to investigate the effects of grape seed oil on quality characteristics of pressed ham. Five different treatments were tested based on differences in the amount of grape seed oil added to the pressed ham. As a control, 10% back fat was added without any grape seed oil. For the first treatment, 10% grape seed oil replaced a portion of the lard component added to the pressed ham. For the 2nd, 3rd and 4th treatments, 20%, 30% and 40% of grape seed oil were substituted for lard, respectively. Pressed ham manufactured with grape seed oil was vacuum packaged and stored for 1, 7, 14,21 and 28 d at $4^{\circ}C$. Samples were analyzed for chemical composition, physico-chemical properties (pH, color) and texture characteristics. Typical chemical composition characteristics (crude protein, crude fat, crude ash) were not significantly different between control and grape seed oil treatment groups. Moisture content of grape seed oil treatment groups (GSO 30% and 40%) was significantly lower than that of controls (p<0.05). There was a not clear difference in pH between control and grape seed oil treatment groups. In the 21 d of storage, pH values of all treatments were significantly higher than those of other storage days. Meat color $(CIEL^*\;and\;b^*)$ of grape seed oil treatment group (GSO 40%) was significantly higher than that of control. Whereas meat color a value of GSO 40% treatment was significantly lower than that of control. It was not clearly changed as storage time increased. There was no significant difference in texture between control and grape seed oil treatment groups, and appeared to be unaffected by storage length. Based on these findings, we conclude that the chemical composition and texture characteristics of manufactured pressed ham were not affected by grape seed oil addition. These results also indicate that high-quality pressed ham can be manufactured with increased polyunsaturated fatty acid content.

• Food Science of Animal Resources
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• v.27 no.1
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• pp.8-15
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• 2007

Conjugated linoleic acid (CLA) was chemically synthesized using the alkaline isomerization method of com oil. CLA-TG was synthesized by reaction with sodium methoxide. Five different treatments were devised based on differences in the amount of CLA-TG added into the pressed han. for controls, 10% of pork back fat among the total component was only added without any CLA-TG. For the first treatment, 5% of CLA-TG among the lard component added into the press ham was replaced. For the 2nd, 3rd and 4th treatments, 10%, 15% and 20% of CLA-TG was respectively replaced. Pressed ham manufactured using CLA-TG was vacuum packaged and then stored for 1, 7, 14, 21 and 28 days at $4^{\circ}C$. Samples were analyzed for chemical composition, physico-chemical properties (pH, color), and texture characteristics. Typical chemical composition characteristics (moisture, crude protein, crude fat) were not significantly different between controls and CLA-TG treatment groups. Crude fat content of CLA-TG treatment groups was significantly lower than that of controls (p<0.05). pH values of controls was higher than that of CLA-TG treatment groups. The pH of control and CLA-TG treatment groups increased significantly as the storage period increased (p<0.05). Meat color (CIE $L^*,\;b^*$) of CLA-TG treatment groups was higher than that of controls. $a^*$ values were decreased by replacement of CLA-TG, but appeared to be unaffected by storage length. There was no significant difference in texture between controls and CLA-TG treatment groups. Based on these findings, we conclude that the physico-chemical properties and texture characteristics of manufactured pressed ham were not affected by CLA-TG addition. Also, our results indicate that high-quality pressed ham can be manufactured with CLA accumulation.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.201-208
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• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.34-39
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• 2008

We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.359-365
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• 2007

In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.