• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.229-232
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• 2001

4H-SIC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco's 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8V pinch off voltage, under $V_{GS=0V}$, $V_{DS=25V}$ conditions, $I_{DSS=270㎃}$mm, $G_{m=45㎳}$mm were obtained. Through the power simulation 2GHz, at the bias of $V_{GS=-4V}$ and $V_{DS=25V}$, 10dB Gain, 34dBm(1dB compression point)output power, 7.6W/mm power density, 37% PAE(power added efficiency) were obtained.d.d.d.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.640-644
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• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

• Journal of Life Science
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• v.13 no.4
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• pp.498-504
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• 2003

This Study was carried out to investigate the optimal mycelial growth of Pholiota nameko. The optimal medium for the mycelial growth was ME medium. The optimal temperature and pH were $25^{\circ}C$$\pm$1 and 5.5, respectively. The modified optimal medium compositions were glucose 3% (w/v), malt extract 0.25% (w/v), yeast extract 0.25% (w/v), $KH_2PO_4$ 0.046% (w/v), $K_2HPO_4$ 0.1% (w/v), $MgSO_4$ㆍ$7H_2O$ 0.05% (w/v). From the result of experiments on the optimal temperature, pH and nutritional requirements, the mycelial growth of modified optimal medium was higher than that of ME medium.

• Journal of the Korean Chemical Society
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• v.8 no.4
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• pp.147-152
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• 1964

Vanadium (IV) and vanadium (V) cupferrate compositions in benzene phase were determined by molar ratio method and continuous variation method spectrophotometrically at 450$m{\mu}$ or 445$m{\mu}$ of wavelength. Compositions of vanadium (IV) cupferrates, V(IV)/Cupf, varied from 1/2 to 1/4 with the acidity of solution from which the complexes were precipitated. The complexes precipitated were vanadium(IV) cupferrate($VCupf_4$) in solution with lower pH than 1.0, and vanadyl(IV) cupferrate ($VOCupf_2$) in solution with 1.8-4.3 of pH. It was considered, however, that the complexes in solution with 1.3-1.7 of pH might be hydrogen vanadyl(IV) cupferrate ($HVOCupf_3$) or nearly equimolar mixture of $VCupf_4\;and\;VOCupf_2$ complexes. Vanadium (V) cupferrate composition did not vary with the acidity of solution from which the complexes were precipitated. In solution with lower pH than 1.8, the complex precipitated was hydrogen vanadyl (V) cupferrate, $HVO_2Cupf_2$.

• Journal of Dairy Science and Biotechnology
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• v.35 no.4
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• pp.255-261
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• 2017

The purpose of this study was to investigate the probiotic properties and antioxidant capacity of lactic acid bacteria isolated from Vietnamese feces and the Korean traditional food kimchi. Six isolated strains were identified as Lactobacillus sp. by 16S rRNA sequencing. All strains showed good resistance to low pH (1.5, 2.0, and 3.0) and 0.3% oxgall bile acids. Culture filtrates from the six strains showed various antioxidant effects, including DPPH, ABTS, reducing power, and metal chelating ($Fe^{2+}$) activities. Two of the six Lactobacillus strains showed potential probiotic activity. Heat resistance and adhesion assays were conducted by mixing the selected strains, Lactobacillus acidophilus V4, Lactobacillus plantarum V7, and Lactobacillus paracasei DK121 isolated from kimchi. The results showed that the heat resistance of these strains was similar to that of a commercial strain, L. plantarum LP. In addition, a mucin attachment assay using the mixture of selected strains (V4, V7, and DK121) showed high binding activity to the mucous layer. In conclusion, a mixture of V4, V7, and DK121 shows promising probiotic activity and may be useful for the development of health-related products.

• Journal of the Korean Applied Science and Technology
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• v.18 no.4
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• pp.254-260
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• 2001

The Mo(V) $di-{\mu}-oxo$ type [$Mo_{2}O_{4}(H_{2}O)_{2}L_{2}$] $SO_{4}$ complexes(L: 2,2'-dipyridyl,4,4'-ethylenedianlline) have been prepared by the reaction of $[Mo_{2}O_{4}(H_{2}O)_{6}]SO_{4}$ with a series of chelate ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate types. In $Mo_{2}O_{4}(H_{2}O)_{2}L_{2}$, two $H_{2}O$ coordinated at trans site of terminal oxygens. The prepared complexes have been characterized by elemental analysis, infrared spectra, $^{1}H$ nuclear magnetic resonance spectra, and thermal analysis(TG-DTA). In the potential range -0.00V to -1.00V at a scan rate of $50mVs^{-1}$, a cathodic peak at -0.81V ${\sim}$ -0.87V (vs SCE) and an anodic peak at -0.61V ${\sim}$ -0.63V (vs SCE) have been observed in aquous solution. We infer these redox are irreversible reaction.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.18-22
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• 2006

Effects of V substitution of Fe on the magnetic properties of $Fe_3O_4$ have been investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), conversion electron Mossbauer spectroscopy (CEMS), and vibrating sample magnetometry (VSM) measurements on sol-gel-grown films. XRD data indicates that the $V_xFe_{3-x}O_4$ films maintain cubic structure up to x=1.0 with little change of the lattice constant. Analyses on V 2p and Fe 2p levels of the XPS data indicate that V exist as $V^{3+}$ mostly in the $V_xFe_{3-x}O_4$ films with the density of $V^{2+}$ ions increasing with increasing V content. Analyses on the CEMS data indicate that $V^{3+}$ ions substitute tetrahedral $Fe^{3+}$ sites mostly, while $V^{2+}$ ions octahedral $Fe^{2+}$ sites. Results of room-temperature VSM measurements on the films reveal that the saturation magnetization for the x=0.14 sample is larger than that of $Fe_3O_4$, while it becomes smaller than that of $Fe_3O_4$ for $x{\geq}0.5$. The coercivity of the $V_xFe_{3-x}O_4$ films is found to increase with x, attributed to the increase of anisotropy by the substitution of $V^{2+}(d^3)$ ions into the octahedral sites.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.136-142
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• 1997

An/n-GaAs(100) Schottky barrier diode has been investigated by using electoreflectance(ER). From the observed Franz-Keldysh oscillatins(FKO), the internal electric field(Ei) of the sample is $5.76\times 10^{4}$V/cm at 300 K. As the modulation voltage($V_{ac}$) IS changed, the line shape of ER signal does not change but its amplitude various linerly. For increasing forward and reverse dc bias boltage($V_{bias}$), the amplitude of ER signal decreases. The internal electric field decreased from $19.3\times 10^4\sim4.39\times10^4$V/cm as $V_{bias}$ INCREASES FROM -5.0 V TO 0.6 V. For Au/n-GaAs the valve of built-in voltage($V_{bi}$) determined from the plot of $V_{bias}$ versus $E_i^2$ is 0.70 V. This value agrees with that observed in the plot of $V_{bias}$ versus amplitude of FKO peak. In addition, the carrier concentraion(N) and potential barrier($\Phi$) of the sample at 300 K are found to be about $2.4\times 10^{16}\textrm{cm}^{-3}$ and 0.78 eV, respectively.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.152-158
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• 1996

Optical absorption and photoconductivity spectra of undoped and Co-doped Cd$_{4}$GeSe$_{6}$ single crystals, grown by the chemical transport reaction using iodine as a transporting agent, were investigated. At 20K, the optical energy gaps of the single crystals are 1.934eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$. The photoconductivity spectra of these single crystals were closely investigated over the temperature range 20-290K. At 20K, the photoconductivity peaks were located at 1.797eV, 1.347eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV, I,.57eV, 1.46eV and 1.38eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$, respectively.ely.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.487-493
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• 1997

Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.