• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.65-72
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• 1993

MgGa2-xInxSe4 single crystal을 bridgman technique로 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있었으며, lattice constant는 a=3.950~4.070$\AA$, c=38.89~39.50$\AA$으로 주어졌고, 높은 photoconductivity를 가지고 있었다. 이 단결정의 energy gap은 2.20~1.90eV이었고, photoconductivity spectrum에 peak의 energy는 2.31~2.01eV로 주어졌으며, photoconductivity의 time constant는 0.24~0.34sec로 주어졌다.

• Journal of the Korean Mathematical Society
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• v.47 no.3
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• pp.547-572
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• 2010

We study existence of positive solutions of the classical nonlinear Schr$\ddot{o}$dinger equation $-{\Delta}u\;+\;V(x)u\;-\;f(x,\;u)\;-\;H(x)u^{2*-1}\;=\;0$, u > 0 in $\mathbb{R}^n$ $u\;{\rightarrow}\;0\;as\;|x|\;{\rightarrow}\;{\infty}$. In fact, we consider the following more general quasi-linear Schr$\ddot{o}$odinger equation $-div(|{\nabla}u|^{m-2}{\nabla}u)\;+\;V(x)u^{m-1}$ $-f(x,\;u)\;-\;H(x)u^{m^*-1}\;=\;0$, u > 0 in $\mathbb{R}^n$ $u\;{\rightarrow}\;0\;as\;|x|\;{\rightarrow}\;{\infty}$, where m $\in$ (1, n) is a positive number and $m^*\;:=\;\frac{mn}{n-m}\;>\;0$, is the corresponding critical Sobolev embedding number in $\mathbb{R}^n$. Under appropriate conditions on the functions V(x), f(x, u) and H(x), existence and non-existence results of positive solutions have been established.

• Journal of the Korean Electrochemical Society
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• v.5 no.1
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• pp.1-6
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• 2002

Silver doped vanadium pentoxides with a doping ratio Ag/V ranging from 0.03 to 0.11 were synthesized by sol-gel process, and $Li/Ag_xV_2O_5$ cell was investigated by the electrochemical methods. It appears to be amorphous layered material and entangled fibrous textures has been grown to form anisotropic corrugated fibrils. NMR measurements revealed that several different kinds of $Li^+$ ions exist in the lithium intercalated xerogel electrodes and the average cell potential was about 3.0V vs. $Li/Li^+$. The cell capacity of the silver doped $Ag_xV_2O_5$ xerogel cathodes was more than 359 mAh/g at discharge current 10mA/g and cycle efficiency $94\%$ was achieved.

• Molecules and Cells
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• v.40 no.5
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• pp.355-362
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• 2017

The ${\beta}2$ integrins are cell surface transmembrane proteins regulating leukocyte functions, such as adhesion and migration. Two members of ${\beta}2$ integrin, ${\alpha}M{\beta}2$ and ${\alpha}X{\beta}2$, share the leukocyte distribution profile and integrin ${\alpha}X{\beta}2$ is involved in antigen presentation in dendritic cells and transendothelial migration of monocytes and macrophages to atherosclerotic lesions. ${\underline{R}}eceptor$ for ${\underline{a}}dvanced$ ${\underline{g}}lycation$ ${\underline{e}}nd$ ${\underline{p}}roducts$ (RAGE), a member of cell adhesion molecules, plays an important role in chronic inflammation and atherosclerosis. Although RAGE and ${\alpha}X{\beta}2$ play an important role in inflammatory response and the pathogenesis of atherosclerosis, the nature of their interaction and structure involved in the binding remain poorly defined. In this study, using I-domain as a ligand binding motif of ${\alpha}X{\beta}2$, we characterize the binding nature and the interacting moieties of ${\alpha}X$ I-domain and RAGE. Their binding requires divalent cations ($Mg^{2+}$ and $Mn^{2+}$) and shows an affinity on the sub-micro molar level: the dissociation constant of ${\alpha}X$ I-domains binding to RAGE being $0.49{\mu}M$. Furthermore, the ${\alpha}X$ I-domains recognize the V-domain, but not the C1 and C2-domains of RAGE. The acidic amino acid substitutions on the ligand binding site of ${\alpha}X$ I-domain significantly reduce the I-domain binding activity to soluble RAGE and the alanine substitutions of basic amino acids on the flat surface of the V-domain prevent the V-domain binding to ${\alpha}X$ I-domain. In conclusion, the main mechanism of ${\alpha}X$ I-domain binding to RAGE is a charge interaction, in which the acidic moieties of ${\alpha}X$ I-domains, including E244, and D249, recognize the basic residues on the RAGE V-domain encompassing K39, K43, K44, R104, and K107.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.211-220
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• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

• Journal of the Korean Chemical Society
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• v.26 no.6
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• pp.378-382
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• 1982

Green crystalline salts of substituted pyridinium oxopentachloromolybdates(V) were obtained from concentrated hydrochloric acid solution of molybdenum(V)-thiocyanate extract. $MoOCl_3(X-py)_2$ (X-py were 4-and 3-cyanopyridine, 2-amino-4-picoline and 4-acetylpyridine) were obtained by reflux of the corresponding substituted pyridinium salts of oxopentachloromolybdates(Ⅴ) in absolute ethanol. ($X-pyH_2$)[$MoOCl_5$]$H_2$O containing the $MoO^{3+}$ group are dissolved and hydrolysed in water but $MoOCl_3(X-py)_2$ are insoluble in water, alcohol and acetone. The complexes are paramagnetic compounds.

• Review of KIISC
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• v.24 no.2
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• pp.28-34
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• 2014

차량간 소통을 통하여 사고를 미연에 방지하고, 운전자의 편의성을 높일 수 있는 V2X는 차세대 자동차 기술 중 하나로 인식되어, 주요 자동차 생산 업체는 물론 미국이나 유럽의 경우 국가적인 차원에서 관심을 가지고 연구 및 기술개발에 힘쓰고 있는 기술이다. 본 고에서는 IEEE 1609.2를 중심으로 V2X 통신 중 보안부분(Security Service)에 대한 설명과 차량을 위한 PKI 시스템 구축 등을 소개하고, 향후 연구 방향에 대하여 논한다.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.123-126
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• 2002

Samples of Nb/Al-Al$O_{x}$/Nb tunnel junction with the size of 50$\mu$m $\times$ 50$\mu$m were fabricated by employing self-aligning and reactive ion etching technique. In the samples with high-quality, $V_{m}$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density $J_{c}$ = 500 A/$cm^{2}$ and $V_{g}$ value (the gap voltage) was 2.8 mV. In the higher $J_{c}$, voltage fluctuation in the current rising at the gap voltage was observed. The $V_{m}$ and $J_{c}$ value were 8 mV and 900 A/$cm^{2}$, respectively.

• East Asian mathematical journal
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• v.1
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• pp.89-100
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• 1985

A mapping f: X$\rightarrow$Y is introduced to be weakly irresolute if, for each x $\varepsilon$ X and each semi-neighborhood V of f(x), there exists a semi-neighborhood U of x in X such that $f(U){\subset}scl(V)$. It will be shown that a mapping f: X$\rightarrow$Y is weakly irresolute iff(if and only if) $f^{-1}(V){\subset}sint(f^{_1}(scl(V)))$ for each semiopen subset V of Y. The relationship between mappings described in [3,5, 6,8] and a weakly irresolute mapping. will be investigated and it will be shown that every irresolute retract of a $T_2$-space is semiclosed.