• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.100-105
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• 1992

Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) analyses have been performed on double-structured Au/V and Au/Ti thin films after heat treatment at 500$^{\circ}$C in air. V- and Tiunderlays sandwiched between gold thin films and SiOz substrates form oxides on the free surface of gold films during the heat treatment. The chemical compositions of the oxides were identified as V205 and TiOz in Au/V and Au/Ti thin films, respectively.

• Journal of IKEEE
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• v.4 no.2 s.7
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• pp.181-191
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• 2000

In this paper, two schemes of generating reference voltages using enhancement-mode MOS transistors and resistors are proposed. The first one is a voltage-mode scheme where the temperature compensation is made by summing a voltage component proportional to a threshold voltage and a voltage component proportional to a thermal voltage. In the second one, that is a current-mode scheme, the temperature compensation is made by summing a current component proportional to a threshold voltage and a current component proportional to a thermal voltage. The designed circuits have been simulated using a $0.65{\mu}m$ n-well CMOS process parameters. The voltage-mode circuit has a temperature coefficient less than $48.0ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.21%/V for a temperature range of $-30^{\circ}C{\sim}130^{\circ}C$ and a VDD range of $3V{\sim}12V$. The current-mode circuit has a temperature coefficient less than $38.2ppm/^{\circ}C$ and a VDD coefficient less than 0.8%/V for $-30^{\circ}C{\sim}130^{\circ}C\;and\; 4V{\sim}12V$. The power consumption of the voltage-mode and current-mode circuits are $27{\mu}W\;and\;65{\mu}W$ respectively for 5V and $30^{\circ}C$. Measurement results show that the voltage-mode reference circuit has a VDD coefficient less than 0.63%/V for $30^{\circ}C{\sim}100^{\circ}C$ and has a temperature coefficient less than $490ppm/^{\circ}C\;for\;3V{\sim}6V$. The proposed reference circuits are simple and thus easy to design. The proposed current-mode reference circuit can be designed to generate a wide range of reference voltages.

• Korean Journal of Mathematics
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• v.20 no.2
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• pp.247-254
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• 2012

The Klee-Quaife problem is finding the minimum order ${\mu}(d,c,v)$ of the $(d,c,v)$ graph, which is a $c$-vertex connected $v$-regular graph with diameter $d$. Many authors contributed finding ${\mu}(d,c,v)$ and they also enumerated and classied the graphs in several cases. This problem is naturally extended to the case of digraphs. So we are interested in the extended Klee-Quaife problem. In this paper, we deal with an equivalent problem, finding the maximum diameter of digraphs with given order, focused on 2-regular case. We show that the maximum diameter of strongly connected 2-regular digraphs with order $n$ is $n-3$, and classify the digraphs which have diameter $n-3$. All 15 nonisomorphic extremal digraphs are listed.

• Bulletin of the Korean Mathematical Society
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• v.50 no.3
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• pp.839-865
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• 2013

We deal with the existence of positive radial solutions concentrating on spheres for the following class of elliptic system $$\large(S) \hfill{400} \{\array{-{\varepsilon}^2{\Delta}u+V_1(x)u=K(x)Q_u(u,v)\;in\;\mathbb{R}^N,\\-{\varepsilon}^2{\Delta}v+V_2(x)v=K(x)Q_v(u,v)\;in\;\mathbb{R}^N,\\u,v{\in}W^{1,2}(\mathbb{R}^N),\;u,v&gt;0\;in\;\mathbb{R}^N,}$$ where ${\varepsilon}$ is a small positive parameter; $V_1$, $V_2{\in}C^0(\mathbb{R}^N,[0,{\infty}))$ and $K{\in}C^0(\mathbb{R}^N,[0,{\infty}))$ are radially symmetric potentials; Q is a $(p+1)$-homogeneous function and p is subcritical, that is, 1 < $p$ < $2^*-1$, where $2^*=2N/(N-2)$ is the critical Sobolev exponent for $N{\geq}3$.

• Progress in Superconductivity
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• v.12 no.1
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• pp.46-50
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• 2010

In the superconducting $Sr_2VO_3FeAs$, containing bimetallic layers, with maximum $T_c{\approx}\;46\;K$ correlation effects on V ions have been investigated using LDA+U method. Within the local density approximation (LDA) this system has the one-third filled $t_{2g}$ manifold of V, decomposed into $d_{xy}$ of bandwidth W=2 eV and nearly degenerate $d_{zx}d_{yz}$ of W=1 eV. Consideration of correlation effects leads to a metal-insulator transition on V ions $t^{2\uparrow}_{2g}\;{\rightarrow}\;d^{1\uparrow}_{xz}\;d^{1\uparrow}_{yz}$ at the critical on-site Coulomb repulsion $U_c$= 3.5 eV. At U=4 eV, the electronic structure, in which V ions are insulating, leads to several van Hove singularities near $E_F$ and similar Fermiology with other pnictides. Applying U to V ions results in increasing Fe moment as well as V moment, indicating somewhat hybridization between Fe and V ions even though this system is strongly 2-dimesional. Our results show possible importance of correlation effects on this system.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.246-249
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• 2000

An Fe$_{49}$ Co$_{49}$ V$_2$alloy is annealed in thermal annealing furnace at 50$0^{\circ}C$, 75$0^{\circ}C$, 80$0^{\circ}C$, and 90$0^{\circ}C$. Annealed samples were cooled in air. The magnetostriction is measured by using a Michelson laser interferometer. Receiving the feedback signal of interference, a mirror attached to piezoelectric transducer (PZT) maintains the optical path length (OPL) between two arms of laser interferometer relatively constant. The feedback voltage is calibrated to the OPL variation. A magnetostriction of 2$\times$10$^{-6}$ at H = 60 Oe increases up to 33.68$\times$10$^{-6}$ at an annealing temperature of 90$0^{\circ}C$, suggesting that the magnetostrictive characteristics are improved by the microstructural modification.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.7
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• pp.16-19
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• 2019

A thinner film has superior electrical properties and a better amorphous structure. Amorphous structures can be effective in improving conductivity through a depletion effect. Research is needed on the Schottky contact, where potential barriers are formed, as a way to identify these characteristics. $SiO_2/SnO_2$ thin films were prepared to examine the amorphous structure and Schottky contact, $SiO_2$ thin films were prepared using Ar = 20 sccm. $SnO_2$ thin films were deposited using mixed gas with a flow rate of argon and oxygen at 20 sccm, and $SnO_2$ thin films were added by magnetron sputtering and treated at $100^{\circ}C$ and $150^{\circ}C$. To identify the conditions under which the amorphous structure was constructed, the XRD patterns were investigated and C-V and I-V measurements were taken to make Al electrodes and perform electrical analysis. The depletion layer was formed by the recombination of electrons and holes through the heat treatment process. $SiO_2/SnO_2$ thin films confirmed that the pores were well formed when heat treated at $100^{\circ}C$ and an electric current was applied over the micro area. An amorphous $SiO_2/SnO_2$ thin film with heat treatment at $100^{\circ}C$ showed no reflection at $33^{\circ}\;2{\theta}$ in the XRD pattern, and a reflection at $44^{\circ}2\;{\theta}$. The macroscopic view (-30 V

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.183-188
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• 1999

The crystallization behavior and electrical conductivity of the $CuO-Bi_2O_3-V_2O_5$ glasses with various CuO content were investigated. The glass formation regin was 0~20 mol% Bi2O3, 5~55 mol% CuO, and 30~90 mol% $V_2O_5$ with Tg=$275^{\circ}C$~$290^{\circ}C$. Among glasses with various compositions, the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass heat-treated at $358^{\circ}C$ for 8 h showed the highest conductivity of ~ at room temperature. The heat-treated glasses increased in electrical conductivity by the order of 104 compared to non heat-treated glass. The linear relationship between 1n($\sigma$T)and $T^{-1}$ indicated that electrical conduction in the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass occurred by a small polaron hopping.

• Korean Journal of Veterinary Research
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• v.40 no.4
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• pp.741-746
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• 2000

We have developed a rapid, simple and precise high-performance liquid chromatographic (HPLC) method using an UV detection system for the determination of new anti-HIV candidates, nineteen KR-V compounds, in rat plasma. We used a analytical columnn of $C_{18}$ ($5{\mu}m$, $250{\times}2.0mm$ I.D.) and a mobile phase of water and ACN mixture (40/60, v/v). Under these conditions, all the KR-V compounds were readily separated from plasma with retention times of 4-12 min. The limits of quantitation for the 19 KR-V compounds were 15-30 ng/ml. The recoveries from the plasma were higher than 85% (C.V.<10%) with exception of KR-V 2, 7 and 15. The compounds KR-V 2, 7 and 15, containing ester moieties, were found to be unstable in plasma. This result suggests that esters, like KR -V 2, 7 and 15, should be excluded from future structure design studies of anti-HIV KR-V agents. In conclusion, the current HPLC method is a valuable analytical tool for investigating the pharmacokinetics of the KR-V series in rats.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.472-476
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• 2001

Type and three-dimensional morphology of carbides precipitated in the X(X= 1.70, 1.92, 2.21, 2.50, 2.86)%C-5%Cr-5%V-5%Mo-5%W-5%Co multi-component white cast iron were investigated using an optical microscope and SEM. The types of carbides precipitated were MC, M$_2$C and M$_{7}$C$_{3}$. Morphology of the MC carbide took three forms, that it petal-like, nodular and coral-like. MC carbide seemed to change its morphology from petal-like through nodular, and finally to coral-like with an increase in carbon content. M7C carbide was classified into lamellar and plate-like type. The lamellar M$_2$C arbide precipitated in the iron with low molybdenum and tungsten contents, and higher contents of both elements in the iron were needed to form the plate-like M$_2$C carbide. The morphology of M$_{7}$C$_{3}$ was rod-like similar to that observed in high chromium white cast iron. However, cobalt does not affect the type and morphology of precipitated carbides.des.