• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.410-414
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• 2001

The microstructure, V-I characteristics, and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Y$_2$O$_3$based vairstors were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, and the varistor voltage and the leakage current in the V-I chracteristics. But the nonlinear exponent relatively strongly affected by cooling rate. And the cooling rate also greatly affected the stability for DC stress. In gross, the varistors cooled with 4$^{\circ}C$/min exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent is -1.44% and -4.85%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12 h)+(0.85 V$_{1mA}$115$^{\circ}C$/12 h)\`(0.90 V$_{1mA}$12$0^{\circ}C$/12 h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12 h)+(0.95 V$_{1mA}$15$0^{\circ}C$/12 h). It should be emphasized that the stability of these varistors is much superior to that of others.s.of others.s.

• Korean Journal of Food Science and Technology
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• v.14 no.2
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• pp.122-124
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• 1982

The triglyceride composition of Korean hazel nut (Corylus heterophylla Fisch. var. Japonica koidz) was determined by high performance liquid chromatography (HPLC) using a $C_{18}$ micro Bondapack column with acetonitril-chloroform-tetrahydrofuran(75 : 15 : 10, v/v/v) and acetonitril-tetrahydrofuran (70 : 30, v/v) solvent mixtures as mobile phase. The triglyceride consisted of 4.14% $C_{38}$, 5.23% $C_{40}$, 10.03% $C_{42}$, 24.02% $C_{44}$, 48.73% $C_{46}$ and 7.85% $C_{48}$ with acetonitril-chloroform-tetrahydrofuran (75 : 15 : 10, v/v/v) mobile phase and 4.51% $C_{38}$, 5.98% $C_{40}$, 11.45% $C_{42}$, 25.14% $C_{44}$ and 52.92% $C_{46}$ with acetonitril-tetrahydrofuran (70 : 30, v/v) mobile phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.

• Korean Chemical Engineering Research
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• v.58 no.2
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• pp.257-265
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• 2020

Densities (ρ) for binary mixtures of ethanol (1) + diisopropyl ether (DIPE) or cyclohexane or alkane (C₆-C₉) (2) were measured at 298.15 K, 308.15 K and 318.15 K. The excess molar volume (V^E_m) of binary mixtures was calculated using ρ data and correlated with Redlich-Kister polynomial equation. The V^E_m values for binary mixtures of ethanol (1) + cyclohexane or n-alkane (C₆-C₉) (2) were positive, whereas for ethanol (1) + DIPE (2) these were negative. The magnitude of V^E_m values follows the order: cyclohexane > n-nonane > n-octane > n-heptane > n-hexane > DIPE. The V^E_m values have been interpreted qualitatively and also quantitatively in terms of Flory-Treszczanowicz-Benson (FTB) model and Prigogine-Flory-Patterson (PFP) theory. The values V^E_m predicted using FTB model agree well with experimental V^E_m values at all mole fractions. But the PFP theory describes well V^E_m data in ethanol-rich region (x₁ > 0.5) for all binary mixtures and is able to predict the sign of V^E_m vs x₁ curve for ethanol-lean region (x₁ < 0.5) except for ethanol (1) + nonane (2) mixtures.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.129-136
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• 1993

습도 감지소자의 물질 중 이온형의 대표적인 물질인 TiO$_{2}$ 습도 센서와 TiO$_{2}$에 V$_{2}$O$_{5}$를 첨가한 TiO$_{2}$-V$_{2}$O$_{5}$ 세라믹 습도센서를 제작하고 V$_{2}$O$_{5}$함량의 변화, 열처리 온도 및 열처리 시간에 따른 습도감지 특성 및 동작온도에 따른 특성 등을 조사하였으며 XRD와 SEM으로 그 원인을 규명하였다. TiO$_{2}$에 V$_{2}$O$_{5}$를 첨가하면 선형성이 좋아지는 것을 알 수 있었고 제작한 시료 중 V$_{2}$O$_{5}$의 함량이 1mol% 열처리 조건이 1000.deg.C, 1시간인 소자는 동작온도 40.deg.C에서 약 95%의 감도를 나타내었다.

• Carbon letters
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• v.6 no.4
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• pp.227-233
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• 2005

Carbonization products C1, C2, C3, C4 and C5 were prepared by the carbonization of date pit in limited air, at 500, 600, 700, 800 and $1000^{\circ}C$, respectively. C1-V-600, C3-V-600, C1-V-1000 and C3-V-1000 were prepared by thermal treatment of C1 and C3 under vacuum at 600 and $1000^{\circ}C$. The textural properties were determined from nitrogen adsorption at 77 K and from carbon dioxide adsorption at 298 K. The surface pH, the FTIR spectra and the acid and base neutralization capacities of some carbons were investigated. The amounts of surface oxygen were determined by out-gassing the carbon-oxygen groups on the surface as $CO_2$ and CO. The adsorption of water vapor at 308 K on C1, C2, C3 and C4 was measured and the decomposition of $H_2O_2$ at 308 K was also investigated on C1, C2, C3, C4 and C5. The surface area and the total pore volume decreased with the rise of the carbonization temperature from 500 to $1000^{\circ}C$. The adsorption of water vapor is independent on the textural properties, while it is related to the amount of acidic carbon-oxygen groups on the surface. The catalytic activity of $H_2O_2$ decomposition does not depend on the textural properties, but directly related to the amount of basic carbon-oxygen complexes out-gassed as CO, at high temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Journal of the Korean Chemical Society
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• v.36 no.1
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• pp.44-50
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• 1992

The ability to account for magnetic and spectra properties of complexes was investigated for the splitting of the degenerate d-orbitals and with nonaqueous solution by UV/vis-spectrophotometric method. The correlation of the magnetitude of 10Dq obtained from the spectra, the pairing energy, and the spin state of the complexes. The electrochemical behavior of complexes were investigated by the use of cyclic voltammetry in aprotic media. These reduction peak of $[(C_6H_5)3_P]_2Pd(II)(CH_3COO)_2$ and $[(C_6H_5)_3Pd]_2Pd(II)Cl_2$ were irreversible one-electron processes at peak $E_{pc1} = -1.32 V,\;E_{pc2} = -1.56 V$ and $E_{pc1} = -1.74 V,\;E_{pc2} = -1.88 V$ of these complexes vs. Ag/AgCl, but nickel complexes were not to be reducible.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.645-647
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• 2008

In this paper, we analyzed interface trap density between pentacene and PVP and SiO2 gate dielectric by using high-low C-V characteristics. The interface trap density was $10^{13}\;cm^{-2}eV^{-1}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.23-30
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• 2005

In this paper, OPPS(oxidized porous poly-silicon) field emitters were fabricated by using various emitter-electrode metal and these electron emission characteristics were investigated for different thermal annealing effects. The addressed OPPS field emitter with Pt/Ti emitter electrode annealed at $300^{\circ}C$-1hr showed the efficiency of $2.98\%$ at $V_{ps}$=12 V and one annealed at $350^{\circ}C$-1hr showed the highest efficiency of $3.37\%$at $V_{ps}$=16V. They are resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous poly-silicon and the decrease of electrical resistance of emitter metal. The brightness of the OPPS field emitter increases linearly in $V_{ps}$ and after oxidation process for $900^{\circ}C$-50min, the brightness of the OPPS field emitter with the as-deposited Pt/Ti emitter electrode was 3600 cd/$m^2$ at the $V_{ps}$=15 V, 6260 cd/$m^2$ at the $V_{ps}$=20 V. Thermal treatment improved the adhesion between the Ti buffer layer and the oxidized porous poly-silicon and also played an important role in the uniform distribution of electric field to the emitter electrode.