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Acoustic Analyses of Vocal Vibrato of Korean Singers

  • Yoo, Jae-Yeon;Jeong, Ok-Ran;Kwon, Do-Ha
    • Speech Sciences
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    • v.12 no.1
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    • pp.37-43
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    • 2005
  • The phenomenon of vocal vibrato may be regarded as an acoustic representation of one of the most rapid and continuous changes in pitch and intensity that the human vocal mechanism is capable of producing. Singers are likely to use vibrato effectively to enrich their voice. The purpose of this study was to obtain acoustic measurements (vF0 and vAm) of 45 subjects (15 trot and 15 ballad singers and 15 non-singers) and to compare acoustic measurements of the vowel /a/ produced by 3 groups on 2 voice sampling conditions (prolongation and singing of /a/). Thirty singers of trot and ballad were selected by a producer and a concert director working for the KBS (Korean Broadcasting System). The MDVP was used to measure the acoustic parameters. A two-way MANOVA was used for statistical analyses. The results were as follows; Firstly, there was no significant difference among the 3 groups in vF0 and vAm in prolongation of /a/, but in singing voice, there was a significant difference among 3 groups in vF0 and vAm. Secondly, there was an interaction between music genre and voice sampling condition in vF0, and vAm. Finally, trot singers sing with more vibrato than ballad singers. It was concluded that it is very important to analyze singers' voice including various voice conditions (prolongation, reading, conversation, and singing) and to identify differences of singing voice characteristics among music genre.

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MULTIPLICITY OF NONTRIVIAL SOLUTIONS TO PERTURBED SCHRÖDINGER SYSTEM WITH MAGNETIC FIELDS

  • Zhang, Huixing;Liu, Wenbin
    • Bulletin of the Korean Mathematical Society
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    • v.49 no.6
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    • pp.1311-1326
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    • 2012
  • We are concerned with the multiplicity of semiclassical solutions of the following Schr$\ddot{o}$dinger system involving critical nonlinearity and magnetic fields $$\{-({\varepsilon}{\nabla}+iA(x))^2u+V(x)u=H_u(u,v)+K(x)|u|^{2*-2}u,\;x{\in}\mathbb{R}^N,\\-({\varepsilon}{\nabla}+iB(x))^2v+V(x)v=H_v(u,v)+K(x)|v|^{2*-2}v,\;x{\in}\mathbb{R}^N,$$ where $2^*=2N/(N-2)$ is the Sobolev critical exponent and $i$ is the imaginary unit. Under proper conditions, we prove the existence and multiplicity of the nontrivial solutions to the perturbed system.

Analytical Model for Deriving the I-V Characteristics of an Intrinsic Cylindrical Surrounding Gate MOSFET (Intrinsic Cylindrical/Surrounding Gate SOI MOSFET의 I-V 특성 도출을 위한 해석적 모델)

  • Woo, Sang-Su;Lee, Jae-Bin;Suh, Chung-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.10
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    • pp.54-61
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    • 2011
  • In this paper, a simple analytical model for deriving the I-V characteristics of a cylindrical surrounding gate SOI MOSFET with intrinsic silicon core is suggested. The Poisson equation in the intrinsic silicon core and the Laplace equation in the gate oxide layer are solved analytically. The surface potentials at both source and drain ends are obtained by means of the bisection method. From them, the surface potential distribution is used to describe the I-V characteristics in a closed-form. Simulation results seem to show the dependencies of the I-V characteristics on the various device parameters and applied bias voltages within a range of satisfactory accuracy.

Improvement of electrical characteristics on SPC-Si TFT employing $H_2$ plasma treatment ($H_2$ 플라즈마를 이용한 SPC-Si TFT의 전기적 특성 향상)

  • Kim, Yong-Jin;Park, Sang-Geun;Kim, Sun-Jae;Lee, Jeong-Soo;Kim, Chang-Yeon;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1238_1239
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    • 2009
  • 본 논문에서는 ELA poly-Si TFT보다 뛰어난 균일도를 갖고, a-Si:H TFT보다 전기적 안정도가 우수한 PMOS SPC-Si TFT의 특성을 연구하였다. SPC-Si의 계면 특성을 향상 시키기 위해 $SiO_2$ 게이트 절연막을 증착하기 전에 Solid Phase Crystalline 실리콘(SPC-Si) 채널 영역에 다양한 H2 플라즈마 처리를 해주었다. PECVD를 이용하여 100W에서 H2 플라즈마 처리를 5분 해주었을 때 SPC-Si TFT의 전기적 특성이 향상되는 것을 볼 수 있는데, $V_{TH}$가 약 -3.91V, field effect mobility가 $22.68cm^2$/Vs, 그리고 Subthreshold swing이 0.64 정도를 보였다. 또한 소자에 Hot carrier stress($V_{GS}$=14.91V, $V_{DS}$=-15V, for 2,000sec)를 주었을 때도 전기적 특성이 변하지 않았으며, 일정한 bias stress($V_{GS}$=-15V, $V_{DS}$=-10V, for 2,000sec)를 가하였을 때도 $V_{TH}$가 증가하지 않았다. 이러한 결과를 통해 SPC-Si가 poly-Si TFT보다 더욱 안정함을 알 수 있었다.

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Intermolecular Interaction and Molecular Energy Transfer ; Vibrational Relaxation of Highly Excited HF and DF (문자간 상호작용과 에너지이동에 대한 이론적 연구 ; 높은 振動準位로 들뜬 HF 및 DF 의 振動緩和)

  • Chang Soon Lee;Min Joo Lee;Yoo Hang Kim
    • Journal of the Korean Chemical Society
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    • v.29 no.6
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    • pp.592-598
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    • 1985
  • The total vibrational deexcitation rate constants $k_{v,v-1}$ of HF(v = 5-7) by HF(${\mu}$ = 0) and DF(${\mu}$ = 9-12) by DF(${\mu}$= 0) including both the vibration to vibration (V ${\to}$ V) and vibration to rotation and translation (V ${\to}$ R, T) energy transfer channels have been calculated semiclas-sically using a simplified collision model. The calculated results are in reasonably good agreement with those obtained by experimental and other theoretical studies. The rate constants increase with increasing temperature and also with increasing v. They also show that the relaxation of the highly excited HF and DF occurs predominantly via the V ${\to}$ R, T path at low temperature. The effectiveness of the V ${\to}$ V path, however, increases as the temperature is raised.

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ROC Analysis of Simulated Chest Lesions for Computed Radiography and Digital Radiography at Various Tube Voltages (다양한 관전압에 따른 CR과 DR 모의병변 흉부 영상의 ROC 평가)

  • Cho, Hyo-Min;Kim, Hee-Joung;Lee, Chang-Lae;Jung, Ji-Young;Park, Hye-Suk
    • Progress in Medical Physics
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    • v.19 no.4
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    • pp.298-304
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    • 2008
  • Current digital radiographic systems are rapidly growing in clinical applications. The purpose of this study was to evaluate the diagnostic performance of computed radiography (CR) and digital radiography (DR) at different tube voltages in the detection of simulated chest lesions. Patterns of simulated interstitial lung disease, incipient infiltration, and nodules were superimposed over an anthropomorphic chest phantom. A simulated chest phantom radiograph was obtained with CR and DR at different tube voltages (70 kV, 90 kV, and 120 kV). A total of 18,000 observations were analyzed using a receiver operating characteristic (ROC) analysis. The detection of all lesions showed higher $A_z$ values at 70 kV than 120 kV with CR. For the DR, mean $A_z$ values at 70 kV were higher than other tube voltages not all lesions but for micro-nodule interstitial lung disease, linear interstitial lung disease, and incipient infiltration. Based on these results, a clinical study should be performed to judge the use of suitable tube voltage according to the type of detector system and lesions.

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A study of Stability at Initial Energization on 765kV power system (765kV 초기가압 운전계통에서의 안정도 검토)

  • Jang, Kyoung-Chel;Kwak, No-Hong;Park, Jeong-Ho;Kim, Tai-Ok
    • Proceedings of the KIEE Conference
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    • 2002.07a
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    • pp.96-98
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    • 2002
  • A 765kV Transmission line system plays an important role in delivering the electric power produced at mid-western in Korea. This system will be constructed and operated normally on 2002. By doing the number of test operation in a given time, the reliability on the operation of 765kV transmission system could be secured.

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Installation methods of OPGW for 765kV overhead power transmission lines (765kV 가공 송전선로용 OPGW 시설공법)

  • Kwan, Y.G.;Kim, Y.;Lee, S.H.
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1641-1643
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    • 1998
  • In recent the maximum voltage of overhead power transmission lines in Korea was upgraded to 765kV. In general a overhead ground wire is installed for protecting overhead power transmission lines from lightning. For the 765kV line, Composite Overhead Ground Wire with Optic Fiber (OPGW) is applied as a overhead ground wire and have a function of the communication line between substations. In this paper, the construction and properties of OPGW, and its installation methods are discribed.

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MAGFET Hybrid IC with Frequency Output (주파수 출력을 갖는 MAGFET Hybrid IC)

  • Kim, Si-Hon;Lee, Cheol-Woo;Nam, Tae-Chul
    • Journal of Sensor Science and Technology
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    • v.6 no.3
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    • pp.194-199
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    • 1997
  • When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is $3.2{\times}10^{4}\;V/A{\cdot}T$. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.

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