• 마이크로전자및패키징학회지
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• 제25권3호
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• pp.67-74
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• 2018

두께 $2.5{\sim}10{\mu}m$인 n형 $Bi_2Te_3$와 p형 $Sb_2Te_3$ 레그 8쌍으로 구성되어 있는 in-plane형 열전박막소자를 전기도금법으로 Si submounts에 형성하고, LED 칩의 구동에 의해 발생하는 겉보기 온도차 ${\Delta}T$와 레그 두께에 따른 발전특성을 분석하였다. LED 방출열에 의해 인가된 ${\Delta}T$가 7.4K일 때 각기 두께 $2.5{\mu}m$, $5{\mu}m$ 및 $10{\mu}m$의 p-n 레그들로 구성된 열전박막소자는 6.1 mV, 7.4 mV 및 11.8 mV의 open circuit 전압을 나타내었으며, 6.6 nW, 12.8 nW 및 41.9 nW의 최대 출력전력을 나타내었다.

• 센서학회지
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• 제29권4호
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• pp.275-278
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• 2020

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (V_DS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (V_GS) = threshold voltage (V_T), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• 제11권2호
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• pp.290-296
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• 2000

본 연구에서는 주의산만을 주소로 내원하는 아동을 진단 준거에 따라 분류하고 각 진단 집단을 설명할 수 있는 인지적 특성을 T.O.V.A. 양상을 중심으로 설명하였다. 소아정신과를 방문한 65명의 아동을 각각 주의력결핍 과잉행동장애(38명), 틱장애(17명), 그리고 기타 정서장애(10명) 집단으로 분류한 후 주의산만의 정도에 영향을 미칠 수 있는 집단의 연령 및 지능(전체 지능, 동작성 지능, 언어성 지능)을 먼저 파악한 후 T.O.V.A.의 중다구인(누락오류, 오경보오류, 정반응시간, 반응시간 표준편차, 예기반응, 다중반응)을 통해 주의산만의 양상을 살펴보았다. 세 집단 간에 연령에서 집단 간에 유의미한 차이가 나타나 연령 수준의 차이에서 기인한 효과를 배제한 결과, 언어성 지능에서 세 집단 간에 유의미한 차이가 나타났다. 또한, T.O.V.A.의 정반응 시간(전반부, 후반부, 전체)에서 세 집단간에 유의미한 차이가 있는 것으로 나타났다. 주의력결핍 과잉행동장애 집단은 틱장애 및 기타 정서장애 집단보다 T.O.V.A.의 정반응 시간이 길어 정보처리의 지연을 시사해 주었다. 한편 주의산만을 주소로 내원하는 아동의 경우 T.O.V.A. 양상과 더불어 연령과 지능의 효과에 대해 신중히 고려해야 할 필요가 있겠다.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.697-700
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• 2007

A novel 2-Dimensional Suppressed Sidewall Injection Magnetotransistor (SSIMT) with high linearity has been fabricated on the standard CMOS technology and experimentally verified. The novel 2-Dimensional SSIMT overcomes the restriction of the standard CMOS technology. Experimental results of the fabricated 2-Dimensional SSIMT show that the variation of each collector output currents are extremely linear as a function of magnetic field from -200mT to 200mT at $I_B = 1 mA,\;V_{CE} = 5 V\;and\;V_{SE} = 5 V$. The relative sensitivity shows up to 13 %/T. The measured nonlinearity of the fabricated device is about 0.9%.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.10-15
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• 2006

Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• 한국작물학회지
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• 제50권5호
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• pp.340-345
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• 2005

A field experiment was conducted to assess the growth characteristics, seed and oil yield of two cultivars of soybean (G max (L.) Merr.) cv. PK-416 ($V_1$) and cv. PK-1024 ($V_2$) in relation to sulphur and nitrogen nutrition. Six combinations ($T_1-T_6$) of two levels of sulphur (0 and 40 kg $ha^{-1}$) and two levels of nitrogen (23.5 and 43.5 kg $ha^{-1}$) were applied to the two soybean cultivars as nutrients. Results indicated significant effect of sulphur and nitrogen, when applied together, on the growth characteristics, yield components, and seed and oil yield. Maximum response was observed with treatment $T_6$ (having 40 kg S and 43.5 kg N $ha^{-1}$). Seed and Oil yields were increased 90 and $102\%$ in $V_1$> and 104 and $123\%$ in $V_2$, respectively as compared to the control i.e. $T_1$ (having 0 kg S and 23.5 kg N $ha^{-1}$). Positive responses of S and N interaction on leaf area index, leaf area duration, crop growth rate and biomass production were also observed. The results obtained in these experiments clearly suggest that balanced and judicious application of nitrogen and sulphur can improve both seed and oil yield of soybean cultivars by enhancing their growth.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1100-1106
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• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2003년도 봄 학술발표회 논문집
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• pp.875-883
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• 2003

Slurry clay has much higher water content than liquid limit of clay and even if small loads apply, it suffers a great settlement. Accordingly it is very difficult to perform a general consolidation test about slurry clay because of high water content. In this study consolidation tests have been performed successfully using Rowe Cell Tester about 1 remolding clay and 3 slurry clays with a water content of 100%, 133% and 150%. From the test results compression index characteristics, secondary compression index characteristics and consolidation coefficient characteristics have been investigated about slurry clay and remolding clay. Also two kinds of theory, by Terzaghi theory and by Mikasa theory, has been used to calculate consolidation coefficients. Compared to the calculation results, they had a similar value of consolidation coefficient. However if Mikasa theory is applied in the field design, the period which reach to the required consolidation degree will be much reduced compared to the period by Terzaghi theory because the time coefficient T$\_$v/ by Mikasa theory is far smaller than T$\_$v/ by Terzaghi theory.

• 한국자동차공학회논문집
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• 제13권1호
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• pp.19-27
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• 2005

The spray characteristics of DISI injector has a great role in engine efficiency and emission. Thus, many researchers have been studied to investigate the spray characteristics of hollow cone type and slit type injector which are used in DISI engine. In this study, we tried to provide spray parameters which effect on the spray characteristics such as injection pressure, ambient pressure and ambient temperature. In addition, we calculated $t_b\;and\;t_c$ to investigate the break up mechanism of test injectors and also obtained $C_v$ to evaluate the spray characteristics. From this study, As the ambient pressure increases in case of slit injector, $C_v$ decreases.