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http://dx.doi.org/10.4313/JKEM.2007.20.8.697

Characteristics of the 2-D SSIMT using a CMOS Process  

Song, Youn-Gui (부경대학교 전자공학과)
Ryu, Ji-Goo (부경대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.8, 2007 , pp. 697-700 More about this Journal
Abstract
A novel 2-Dimensional Suppressed Sidewall Injection Magnetotransistor (SSIMT) with high linearity has been fabricated on the standard CMOS technology and experimentally verified. The novel 2-Dimensional SSIMT overcomes the restriction of the standard CMOS technology. Experimental results of the fabricated 2-Dimensional SSIMT show that the variation of each collector output currents are extremely linear as a function of magnetic field from -200mT to 200mT at $I_B = 1 mA,\;V_{CE} = 5 V\;and\;V_{SE} = 5 V$. The relative sensitivity shows up to 13 %/T. The measured nonlinearity of the fabricated device is about 0.9%.
Keywords
SSIMT; Magnetotransistor; 2-dimensional; Guardring;
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