• 대한전기학회논문지
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• 제41권7호
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• pp.760-765
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• 1992

The material properties and the TFT characteristics fabricated on SiOS12T substrate by LPCVD using SiHS14T gas were investigated. The deposition rate showed Arrhenius behavior with an activation energy of 31Kcal/mol. And the transition temperature form amorphous to crystalline deposition was observed at 570$^{\circ}C$-580$^{\circ}C$. The strong(220) texture was observed as the deposition temperature increases. XRD analysis showed that the film texture of the as-deposited polycrystalline silicon does not change after annealing at 850$^{\circ}C$. The fabricated TFT's based on the as-deposited amorphous film showed superior electrical characteristics to those of the as-deposited polycrystalline films. It is considered that the different electrical characteristics result from the difference of flat band voltage(VS1FBT) due to the interface trap density between the gate oxide and the active channel.

• 전기전자학회논문지
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• 제20권3호
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• pp.295-298
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• 2016

본 논문에서는 기존 ESD 보호소자인 SCR과 MVSCR, LVTSCR의 Turn-on-Time 및 전기적 특성을 시놉시스사의 T-Cad 시뮬레이션을 통하여 분석하였다. 분석결과 세 소자 모두 대략 2V 에서 3V 내외의 홀딩전압 특성을 보였으며, SCR은 약 20V의, MVSCR은 약 12V, LVTSCR은 9V로 순차적으로 개선된 트리거 특성을 보였다. 턴-온타임 시뮬레이션 결과는 SCR이 2.8ns, MVSCR과 LVTSCR은 각각 2.2ns, 2.0ns로 LVTSCR이 가장 짧은 턴-온 특성을 보였다. 반면 IT2 는 SCR이 약 7.7A, MVSCR은 5.5A LVTSCR은 4A의 특성을 보였으므로 I/O 및 파워 클램프 단에 적용 시 동작전압에 따른 최적화된 소자를 선택해야 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1853-1855
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• 2000

An experimental investigation has been performed in order to understand the $\Phi$-q-n characteristics related to the PD taking place from the various size of artificial defects inserted in epoxy insulation. In this purpose, PD has been detected simultaneously by two different methods such as commercialized PD detector(TE571) and our detection system using self designed CT type sensor. Under the presence of void in epoxy insulation, PD has been initiated at the voltages between 16kV and 20kV which are much lower than the dielectric strength of epoxy insulation (130kV/mm$\sim$l50kV/mm). And also it is revealed that $\Phi$-q-n characteristics have been observed to be dependent upon the size of the artificial defects. Throughout this work, the on site applicability of the self designed Sensor has also been proved by comparing the results with those from the commercialized PD detector. And more one, considerable basic data regarding the insulation, diagnosis could be provided to understand the presence of the voids possibly inserted into the epoxy insulation system of the power apparatus.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권2호
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• pp.62-67
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• 2002

This paper provides the results of accelerated aging test of 18kV ZnO lightning arresters to investigate the leakage current characteristics. It was impossible to establish the replacement criterion for field operating lightning arrester because conventional aging test was only focused on the aging of ZnO elements. In general, it is possible to replace the aged arresters before the failure in the field using the leakage current measurement because it must be increased by the aging. But we can not use the method because we don't know the characteristics of the installed lightning arresters. Therefore in this paper we applied operating voltage and accelerating cycle which consists of temperature and humidity to the arresters. Then we measured the variation of total and resistive leakage current and found out the characteristics of the acted lightning arresters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.183-184
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• 2005

In this study, our varistors based on M.Matsuoke's composition were fabricated with ZnO nano-powder whose sizes were 50nm and 100nm. Electrical properties of ZnO nano-powder varistors were obtained by capacitance-voltage and frequency-real impedance. nano-powder varistors are indicated the change of the interface defects density $N_t$ at the grain boundaries and the donor concentration $N_d$ in the ZnO grains. Frequency analysis was accomplished to understand the equivalent circuit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.295-299
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• 1996

In order to investigate the relation between the microstructure and the V-I characteristics of HTSC wire, single and 19 filamentary silver-sheathed Bi2223 tapes were fabricated using the powder-in-tube method. Higher J$\_$c/ at 77.3 K(0 T) and 4.2 K(in magnetic field) can be achieved for the 19 filamentary Bi tape, comparing the single filamentary tape. However, the I$\_$c/ distribution of 19 filamentary Bi2223 tape was found to be wider by analyzing the curve obtained from 2nd differential of V-I data. This was considered to be resulted from worse uniformity of oxide filament due to severe cold working.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

• 한국축산식품학회지
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• 제31권4호
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• pp.588-595
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• 2011

본 실험은 홍삼추출물의 농도별 처리를 통한 저염, 저지방 소시지 개발을 위하여 무처리(C), 아스코르빈산 나트륨 0.1%(V), 홍삼추출물(RGE) 0.5%(T1), 1%(T2) 및 1.5% (T3)를 첨가하여 품질 평가를 실시하였다. pH, 가열감량, CIE $b^*$은 T3처리구가 다른 시험구보다 높게 나타났으며(p<0.001). 명도(CIE $L^*$) 및 적색도(CIE $a^*$)는 낮게 낮아졌다(p<0.001). 또한, T3이 C보다 경도(hardness) 및 표면경도(surface hardness)가 낮게 나타났으나(p<0.01), 응집성(cohesiveness)은 RGE처리구가 높게 나타났다(p<0.05). 관능검사 측정결과 향기에서 T2 및 T3이 C 및 V보다 높게 나타내었지만(p<0.05), 육색, 맛, 조직감, 다즙성 및 종합적인 기호도는 시험구간 유의적인 차이를 나타내지 않았으며, 저장 1, 2 및 3주차의 TBARS에 있어 T3가 다른시험구보다 유의적으로 높게 나타났으나(p<0.01), T2 및 T3는 저장기간 동안 TBARS의 유의적인 변화가 나타내지 않았다(p>0.05). VBN 및 총균수는 저장 3 및 4주차에는 RGE처리구가 C보다 유의적으로 낮게 나타났다(p<0.01). 이상의 결과, 1% 이상의 RGE첨가구가 지방산화, 향기, 미생물학적 측면에서 우수한 결과를 나타내었다.

• International Journal of Aeronautical and Space Sciences
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• 제18권4호
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• pp.614-622
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• 2017

The characteristics of aerodynamic drag for Transonic Vehicle in Evacuated Tube was investigated using computational fluid dynamics. At first, parametric study on the system was performed according to the Mach number of the vehicle's speed ($Mach_v$), evacuated pressure of the tube ($Pre_t$), and blockage ratio (BR) between the vehicle and tube via axisymmetric flow analysis; the $Mach_v$ ranged from 0.3 to 1.0. The $Pre_t$ was 100, 1,000 and 10,000 Pa and the BR was 0.1, 0.2, and 0.4. In the calculations, the aerodynamic drag of the vehicle was larger when the BR and the pressure became larger. Concerning the $Mach_v$, the drag coefficient ($C_d$) became the maximum when the $Mach_v$ was near the Kantrowitz limit and decreased, which showed the typical transonic flow pattern. Then, three dimensional flow analysis was performed by changing the $Mach_v$ from 0.3 to 1.0 and setting the BR and the $Pre_t$ as 0.34 and 100 Pa, respectively by referring the Hyperloop Alpha documentation. From the calculations, the $C_d$ from three dimensional flow simulations were somewhat larger than those of axisymmetric ones because of the eccentricity of the vehicle inside the tube. However, the pattern of $C_d$ according to the $Mach_v$ was compatible with that of axisymmetric ones.