• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.106-109
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• 2005

The ITO thin films for Top-Emitting Organic Light Emitting Devices (TOLEDs) were prepared on cell(LiF/Organic Layer/Bottom Electrode : ITO ) by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying gas pressure, input current and distance of target to target($D_{T-T}$). As a function of sputtering conditions, I-V characteristics of prepared ITO thin films on cell were measured by 4156A (HP). In the results, when the In thin films were deposited at $D_{T-T}$ 70mm and working pressure 1mTorr, the leakage current of ITO/cell was about 11[V] and 5E-6[$mA/cm^2$].

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.40-47
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• 1998

This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.497-500
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• 1999

This paper reports on the fabrication and characteristics of recessed gate GaN MESFETs fabricated using a photoelectrochemical wet etching method. The unique etching process utilizes photo-resistive mask and KOH based etchant. GaN MESFETs with successfully recessed gate structure was characterized in terms of dc and RF performance. The fabricated GaN MESFET exhibits a current saturation at $V_{DS}$ = 4 V and a pinch-off at $V_{GS}$ =-3V The peak drain current of the device is about 230mA/mm at 300 K and the value is remained almost same for 500K operation. The $f_{T}$ and $f_{max}$ from the device are 6.357Hz and 10.25 GHz, respectively.y.y.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.25-28
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• 2009

A 154kV class high-temperature superconducting (HTS) power cable system is developing in Korea. For insulation design of this cable, it is important that study on cryogenic electrical insulation design to develop the cold dielectric type HTS cable because the cable is operated under the high voltage environment in cryogenic temperature. Therefore, this paper describes a design method for the electrical insulation layer of the cold dielectric type HTS cable adopting the partial discharge-free design under ac stress, based on the experimental results such a ac breakdown strength, partial discharge inception stress, $V_{ac}$-t characteristics, $V_{imp}$-n characteristics, and impulse breakdown strength of liquid nitrogen/laminated polypropylene paper (LPP) composite insulation system in which the mini-model cable is immersed into pressurized liquid nitrogen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.123-127
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• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• ETRI Journal
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• v.31 no.6
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• pp.647-652
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• 2009

Solution-processable organic semiconductors have been investigated not only for flexible and large-area electronics but also in the field of biotechnology. In this paper, we report the design and fabrication of biosensors based on completely organic thin-film transistors (OTFTs). The active material of the OTFTs is poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer functionalized with biotin hydrazide. The relationship between the chemoresistive change and the binding of avidin-biotin moieties in the polymer is observed in the output and on/off characteristics of the OTFTs. The exposure of the OTFTs to avidin causes a lowering of ID at $V_D$ = -40 V and $V_G$ = -40 V of nearly five orders of magnitude.

• Advances in aircraft and spacecraft science
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• v.5 no.1
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• pp.21-49
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• 2018

In this paper, geometric nonlinear bending characteristics of single wall carbon nanotube reinforced composite (SWCNTRC) doubly curved shell panels subjected to uniform transversely loadings are investigated. The nonlinear mathematical model is developed for doubly curved SWCNTRC shell panel on the basis of higher-order shear deformation theory and Green- Lagrange nonlinearity. All nonlinear higher order terms are included in the mathematical model. The effective material properties of SWCNTRC are estimated by using Eshelby-Mori-Tanaka micromechanical approach. The governing equation of the shell panel is obtained using the total potential energy principle and a Newton-Raphson iterative method is employed to compute the nonlinear displacement and stresses. The present results are compared with published literature. The effect of SWCNT volume fraction, width-to-thickness ratio, radius-to-width ratio (R/a), boundary condition, linear and nonlinear deflection, stresses and different types of shell geometry on nonlinear bending response is investigated.

• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.7-9
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• 2003

Viewing angle characteristics of a nematic liquid crystal (NLC) using a in-plane driven (IPD) vertical alignment (VA) cell without a negative compensation film on a homeotropic alignment layer were studied. Good voltage-transmittance (V - T) curves were obtained using the rubbing aligned IPD- VA cell. However, instability and low transmittances of V - T characteristics in photo aligned IPD- VA cell was measured. The EO performance of a rubbingaligned IPD- VA cell without a negative compensation film was wider than that of photoaligned IPD- VA cell and conventional VA cell. Also, the fabrication processes using the rubbing aligned IPD- VA cell mode be carried out with only one-sided rubbing.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.363-369
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• 2017

This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.